公开(公告)号：US11222845B2

公开(公告)日：2022-01-11

申请号：US16593884

申请日：2019-10-04

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Po-I Wu ,  Chen-Chao Wang

IPC: H01L23/52 ,  H01L23/528

Abstract: A semiconductor device includes a dielectric layer, a first conductive layer penetrating the dielectric layer, and a grounding structure disposed within the dielectric layer and adjacent to the first conductive layer. The dielectric layer has a first surface and a second surface opposite the first surface. The first conductive layer has a first portion and a second portion connected to the first portion. The first portion has a width greater than that of the second portion.

公开(公告)号：US11874515B2

公开(公告)日：2024-01-16

申请号：US17588105

申请日：2022-01-28

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Po-I Wu ,  Ming-Fong Jhong

IPC: G02B6/43 ,  G02B6/42

CPC classification number: G02B6/43 ,  G02B6/4277 ,  G02B6/4284

Abstract: The present disclosure relates to an electronic device that includes a waveguide, a plurality of transceiving portions over the waveguide, and a cavity between the waveguide and the transceiving portions and connecting the waveguide with the transceiving portions. The cavity is configured for resonating of an electromagnetic wave from the waveguide or the transceiving portions.