公开(公告)号：US06744080B2

公开(公告)日：2004-06-01

申请号：US10097651

申请日：2002-03-13

申请人： Alain Chantre ,  Helene Baudry ,  Didier Dutartre

发明人： Alain Chantre ,  Helene Baudry ,  Didier Dutartre

IPC分类号： H01L2973

CPC分类号： H01L29/66242 ,  H01L29/7378

摘要： Transistor and method of manufacturing a bipolar transistor of the double-polysilicon, heterojunction-base type, in which a semiconducting layer with SiGe heterojunction is formed by non-selective epitaxy on an active region of a substrate and an insulating region surrounding the active region. At least one stop layer is formed on the semiconducting layer above a part of the active region. A layer of polysilicon and an upper insulating layer are formed on the semiconducting layer and on a part of the stop layer, leaving an emitter window free. An emitter region is formed by epitaxy in the emitter window, resting partially on the upper insulating layer and in contact with the semiconducting layer.

摘要翻译： 晶体管和双晶硅异质结基极型双极晶体管的制造方法，其中具有SiGe异质结的半导体层通过非选择性外延在衬底的有源区和围绕有源区的绝缘区形成。 在有源区域的一部分上方的半导体层上形成至少一个阻挡层。 在半导体层和停止层的一部分上形成多晶硅层和上绝缘层，留下发射器窗口。 发射极区域通过在发射极窗中外延形成，部分地搁置在上绝缘层上并与半导体层接触。

公开(公告)号：US06551891B1

公开(公告)日：2003-04-22

申请号：US09668428

申请日：2000-09-22

申请人： Alain Chantre ,  Michel Marty ,  Helene Baudry

发明人： Alain Chantre ,  Michel Marty ,  Helene Baudry

IPC分类号： H01L21331

CPC分类号： H01L29/66242 ,  H01L29/66272

摘要： The fabrication process comprises a phase of producing a base region having an extrinsic base and an intrinsic base, and a phase of producing an emitter region comprising an emitter block having a narrower lower part located in an emitter window provided above the intrinsic base. Production of the extrinsic base comprises implantation of dopants, carried out after the emitter window has been defined, on either side of and at a predetermined distance dp from the lateral boundaries of the emitter window, so as to be self-aligned with respect to this emitter window, and before the emitter block is formed.

摘要翻译： 该制造工艺包括产生具有非本征基极和本征基极的基极区域的相位，以及产生发射极区域的相位，该发射极区域包括位于位于本征基底之上的发射极窗口中的较窄的下部的发射极阵列。 外部基极的制造包括在发射极窗口被限定之后进行的掺杂剂的注入，并且在距离发射器窗口的横向边界的预定距离dp处，以便相对于该自对准 发射极窗口，并且在发射极块形成之前。