公开(公告)号：US09413309B1

公开(公告)日：2016-08-09

申请号：US14668832

申请日：2015-03-25

Applicant: Analog Devices Global

Inventor： Dixian Zhao ,  Patrick Reynaert ,  Michael F. Keaveney

IPC: H03F3/45 ,  H03F3/193 ,  H03F1/02

CPC classification number: H03F3/193 ,  H03F1/0233 ,  H03F3/45188 ,  H03F2200/451 ,  H03F2203/45024 ,  H03F2203/45481

Abstract: Provided herein are apparatus and methods for a cascode amplifier topology for millimeter-wave power application. The cascode amplifier can use a neutralized common source stage cascoded with a bootstrapped common gate stage to provide an amplifier topology having enhanced performance, gain, stability and reliability. Additionally, a bootstrap capacitor of the common gate stage can be patterned between the source fingers and the drain fingers of a cascode transistor so as to improve device performance. Operating as an RF power amplifier, a single-stage cascode amplifier using the neutralized common source stage with the bootstrapped common gate stage can provide greater than 15 dB of power gain to signals of the E band.

Abstract translation: 本文提供了用于毫米波功率应用的共源共栅放大器拓扑的装置和方法。 共源共栅放大器可以使用与自举公共栅极级级联的中和的共源电源级，以提供具有增强的性能，增益，稳定性和可靠性的放大器拓扑。 此外，可以在共源栅极晶体管的源极指和漏极指之间图案化公共栅极级的自举电容器，以便提高器件性能。 作为RF功率放大器，使用具有自举公共栅极级的中和的共源极级的单级共源共栅放大器可以向E波段的信号提供大于15dB的功率增益。