公开(公告)号：US20240429048A1

公开(公告)日：2024-12-26

申请号：US18745485

申请日：2024-06-17

Applicant: Applied Materials, Inc.

Inventor： Ruiying HAO ,  Thomas KIRSCHENHEITER ,  Arvind KUMAR ,  Mahendra PAKALA ,  Roya BAGHI ,  Balasubramanian PRANATHARTHIHARAN ,  Fredrick FISHBURN

IPC: H01L21/02 ,  H01L29/165

Abstract: A semiconductor device and a method for manufacturing thereof. A substrate is provided. At least one silicon layer is formed on top of the substrate. At least one silicon-germanium layer is formed on top of at least one silicon layer. At least one silicon-germanium layer includes at least one n-type dopant. The semiconductor device having at least one silicon layer and at least one silicon-germanium layer is formed.

公开(公告)号：US20250142911A1

公开(公告)日：2025-05-01

申请号：US18889143

申请日：2024-09-18

Applicant: Applied Materials, Inc.

Inventor： Arvind KUMAR ,  Roya BAGHI ,  Mahendra PAKALA ,  Thomas KIRSCHENHEITER

IPC: H01L29/165 ,  H01L21/02 ,  H01L21/324

Abstract: Embodiments of the present disclosure generally relate to epitaxial film stacks and vapor deposition processes for preparing the epitaxial film stacks. In one or more embodiments, a carbon-doped silicon-germanium and silicon mini-stack is produced with relatively low defects or crystal imperfections. A multi-layered epitaxial stack containing a plurality of the carbon-doped silicon-germanium and silicon mini-stacks is deposited on a substrate. Each multi-layered epitaxial stack contains a carbon-doped silicon germanium stack and a silicon film. The carbon-doped silicon germanium stack contains a carbon-silicon-germanium layer disposed between a first silicon-germanium layer and a second silicon-germanium layer. The silicon film contains the silicon bulk layer disposed on the silicon seed layer. In some embodiments, a method for fabricating the epitaxial film stack includes sequentially depositing a carbon-doped silicon germanium stack and a silicon film to form the carbon-doped silicon-germanium and silicon mini-stack during a deposition cycle.