公开(公告)号：US20250113522A1

公开(公告)日：2025-04-03

申请号：US18899327

申请日：2024-09-27

Applicant: Applied Materials, Inc.

Inventor： Ruiying HAO ,  Fredrick David FISHBURN ,  Raghuveer Satya MAKALA ,  Thomas John KIRSCHENHEITER ,  Balasubramanian PRANATHARTHIHARAN

IPC: H01L29/775 ,  H01L21/02 ,  H01L29/423 ,  H01L29/66 ,  H01L29/786

Abstract: Three-dimensional (3D) memory structures and methods of formation of same are provided herein. In some embodiments, a 3D memory fabrication structure includes: a base silicon (Si) layer; a silicon germanium (SiGe) layer disposed above the base Si layer; and a doped silicon (Si) layer disposed on at least one side of the SiGe layer, wherein the doped Si layer contains a dopant that is at least one of carbon (C) or boron (B).

公开(公告)号：US20240429048A1

公开(公告)日：2024-12-26

申请号：US18745485

申请日：2024-06-17

Applicant: Applied Materials, Inc.

Inventor： Ruiying HAO ,  Thomas KIRSCHENHEITER ,  Arvind KUMAR ,  Mahendra PAKALA ,  Roya BAGHI ,  Balasubramanian PRANATHARTHIHARAN ,  Fredrick FISHBURN

IPC: H01L21/02 ,  H01L29/165

Abstract: A semiconductor device and a method for manufacturing thereof. A substrate is provided. At least one silicon layer is formed on top of the substrate. At least one silicon-germanium layer is formed on top of at least one silicon layer. At least one silicon-germanium layer includes at least one n-type dopant. The semiconductor device having at least one silicon layer and at least one silicon-germanium layer is formed.

公开(公告)号：US20250037997A1

公开(公告)日：2025-01-30

申请号：US18781631

申请日：2024-07-23

Applicant: Applied Materials, Inc.

Inventor： Ruiying HAO ,  Thomas John KIRSCHENHEITER ,  Fredrick FISHBURN ,  Abhishek DUBE ,  Raghuveer S. MAKALA ,  Balasubramanian PRANATHARTHIHARAN

IPC: H01L21/02 ,  H01L21/306

Abstract: A semiconductor device and a method for manufacturing thereof. A substrate is provided. One or more groups of layers are formed on top of the substrate. A compensation layer is formed on top of at least one group of layers. At least one silicon layer is formed on top of the compensation layer. At least a portion of one or more layers in the one or more groups of layers is etched. The semiconductor device is formed.

公开(公告)号：US20250132163A1

公开(公告)日：2025-04-24

申请号：US18894659

申请日：2024-09-24

Applicant: Applied Materials, Inc.

Inventor： Raghuveer Satya MAKALA ,  Ruiying HAO ,  Devika S. GRANT ,  Balasubramanian PRANATHARTHIHARAN

IPC: H01L21/308 ,  H01L21/02 ,  H01L21/033 ,  H01L23/00

Abstract: Embodiments of the present disclosure include a thinned device structure and method of forming a thinned device structure. Embodiments of the disclosure provided herein include the use of engineered epitaxial (Epi) layers that are formed on a base substrate. The engineered epitaxial layers include two or more epitaxial layers that each include materials that allow at least one of the two or more epitaxial layers to be selectively removed from the other layer(s). In some embodiments, one of the two or more formed epitaxial layers has etch selectivity (e.g., wet and/or dry etch selectivity) to materials disposed on either side of the formed layer.

公开(公告)号：US20230259035A1

公开(公告)日：2023-08-17

申请号：US18093121

申请日：2023-01-04

Applicant: Applied Materials, Inc.

Inventor： Paola DE CECCO ,  Ruiying HAO ,  Regina Germanie FREED ,  Luisa BOZANO

IPC: G03F7/20 ,  G03F7/16 ,  G03F7/004 ,  G03F7/40

CPC classification number: G03F7/203 ,  G03F7/2004 ,  G03F7/167 ,  G03F7/0043 ,  G03F7/40

Abstract: Embodiments of the present disclosure generally relate to methods for providing real-time characterization of photoresist properties. In some embodiments, a method of preparing a patterned photoresist on a substrate includes forming an unpatterned photoresist on the substrate, exposing the unpatterned photoresist to a first dose of EM radiation at a first location on the unpatterned photoresist with a first light source, and measuring an optical property of the unpatterned photoresist and exposing the unpatterned photoresist to a second dose of EM radiation at the first location on the unpatterned photoresist to create a patterned or partially patterned photoresist. The second dose of EM radiation has a greater wavelength, a greater number of pulses, or a longer exposure period than the first dose of EM radiation with a second light source. Also, at least one of the first light source and the second light source is an on-board metrology device.