公开(公告)号：US20200058503A1

公开(公告)日：2020-02-20

申请号：US16521306

申请日：2019-07-24

Applicant: Applied Materials, Inc.

Inventor： Vinay Shankar VIDYARTHI ,  Rajinder DHINDSA

IPC: H01L21/033 ,  H01L21/311 ,  H01L21/02

Abstract: Embodiments of the present disclosure provide methods and apparatus for forming and patterning a spacer layer for multi-patterning processes. In one embodiment, a method for patterning a spacer layer on a substrate includes forming a protective layer on a spacer layer disposed on a structure disposed on a substrate, wherein the protective layer is formed predominately on a top surface of the spacer layer, than a bottom surface of the spacer layer, etching the spacer layer from the bottom surface, forming a polymer layer on the substrate, etching a top portion of the polymer layer and a first portion the spacer layer located the top surface of the structure, and removing the structure from the substrate and leaving a second portion the spacer layer on the substrate.