公开(公告)号：US20240071773A1

公开(公告)日：2024-02-29

申请号：US18232916

申请日：2023-08-11

Applicant: Applied Materials, Inc.

Inventor： Lei Liao ,  Yichuan Ling ,  Zhiyu Huang ,  Hideyuki Kanzawa ,  Fenglin Wang ,  Rajesh Prasad ,  Yung-Chen Lin ,  Chi-I Lang ,  Ho-yung David Hwang ,  Lequn Liu

IPC: H01L21/3115 ,  H01L21/02

CPC classification number: H01L21/31155 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/02167

Abstract: Exemplary methods of semiconductor processing may include forming a layer of silicon-containing material on a semiconductor substrate. The methods may include performing a post-formation treatment on the layer of silicon-containing material to yield a treated layer of silicon-containing material. The methods may include contacting the treated layer of silicon-containing material with an adhesion agent. The methods may include forming a layer of a resist material on the treated layer of silicon-containing material.