公开(公告)号：US20220367186A1

公开(公告)日：2022-11-17

申请号：US17875535

申请日：2022-07-28

申请人： Applied Materials, Inc.

发明人： Nancy Fung ,  Chi-I Lang ,  Ho-yung David Hwang

IPC分类号： H01L21/033 ,  H01L21/02 ,  H01L21/311

摘要： Methods and film stacks for extreme ultraviolet (EUV) lithography are described. The film stack comprises a substrate with a hard mask, bottom layer, middle layer and photoresist. Etching of the photoresist is highly selective to the middle layer and a modification of the middle layer allows for a highly selective etch relative to the bottom layer.

公开(公告)号：US20210391215A1

公开(公告)日：2021-12-16

申请号：US17335399

申请日：2021-06-01

申请人： Applied Materials, Inc.

发明人： Lili Feng ,  Yuqiong Dai ,  Madhur Sachan ,  Regina Freed ,  Ho-yung David Hwang

IPC分类号： H01L21/768 ,  H01L23/522

摘要： Apparatuses and methods to provide fully self-aligned first metallization lines, M1, via, and second metallization lines, M2, are described. A first metallization line comprises a set of first conductive lines extending along a first direction on a first insulating layer on a substrate; a second metallization line comprising a set of second conductive lines on an etch stop layer above the first metallization line, the set of second conductive lines extending along a second direction that crosses the first direction at an angle; and at least one via between the first metallization line and the second metallization line, the at least one via comprising a via metallization layer, wherein the at least one via is self-aligned along the second direction to one of the first metallization lines and the at least one via is self-aligned along the first direction to one of the second metallization lines, the second direction crossing the first direction at an angle.

公开(公告)号：US10910381B2

公开(公告)日：2021-02-02

申请号：US16527915

申请日：2019-07-31

申请人： Applied Materials, Inc.

发明人： Tejinder Singh ,  Takehito Koshizawa ,  Abhijit Basu Mallick ,  Pramit Manna ,  Nancy Fung ,  Eswaranand Venkatasubramanian ,  Ho-yung David Hwang ,  Samuel E. Gottheim

IPC分类号： H01L27/10 ,  H01L21/02 ,  H01L27/108

摘要： Apparatuses and methods to provide a patterned substrate are described. A plurality of patterned and spaced first lines and carbon material lines and formed on the substrate surface by selectively depositing and etching films extending in a first direction and films extending in a second direction that crosses the first direction to pattern the underlying structures.

公开(公告)号：US11508617B2

公开(公告)日：2022-11-22

申请号：US16662200

申请日：2019-10-24

申请人： Applied Materials, Inc.

发明人： Hao Jiang ,  Chi Lu ,  He Ren ,  Chi-I Lang ,  Ho-yung David Hwang ,  Mehul Naik

IPC分类号： H01L21/768 ,  H01L21/027 ,  H01L21/3213 ,  H01L21/306 ,  H01L21/203

摘要： A method of forming an interconnect structure for semiconductor devices is described. The method comprises etching a patterned interconnect stack for form first conductive lines and expose a top surface of a first etch stop layer; etching the first etch stop layer to form second conductive lines and expose a top surface of a barrier layer; and forming a self-aligned via.

公开(公告)号：US20210343592A1

公开(公告)日：2021-11-04

申请号：US17375122

申请日：2021-07-14

申请人： Applied Materials, Inc.

发明人： Yung-Chen Lin ,  Qingjun Zhou ,  Ying Zhang ,  Ho-yung David Hwang

IPC分类号： H01L21/768 ,  H01L21/027 ,  H01L21/033

摘要： Methods of forming and processing semiconductor devices which utilize the selective etching of aluminum oxide over silicon oxide, silicon nitride, aluminum oxide or zirconium oxide are described. Certain embodiments relate to the formation of self-aligned contacts for metal gate applications.

公开(公告)号：US20210116799A1

公开(公告)日：2021-04-22

申请号：US17071331

申请日：2020-10-15

申请人： Applied Materials, Inc.

发明人： Lei Zhong ,  Ho-yung David Hwang

IPC分类号： G03F1/24 ,  H01L21/033

摘要： Extreme ultraviolet (EUV) hard masks and methods for their manufacture are disclosed. The EUV hardmasks comprise a substrate, a multilayer stack of alternating reflective layers on the substrate, and a photoresist layer on the multilayer stack. The alternating reflective layers comprise silicon and a nonmetal. Methods of transferring a pattern to a substrate are also disclosed.

公开(公告)号：US20200043932A1

公开(公告)日：2020-02-06

申请号：US16527915

申请日：2019-07-31

申请人： Applied Materials, Inc.

发明人： Tejinder Singh ,  Takehito Koshizawa ,  Abhijit Basu Mallick ,  Pramit Manna ,  Nancy Fung ,  Eswaranand Venkatasubramanian ,  Ho-yung David Hwang ,  Samuel E. Gottheim

IPC分类号： H01L27/108

摘要： Apparatuses and methods to provide a patterned substrate are described. A plurality of patterned and spaced first lines and carbon material lines and formed on the substrate surface by selectively depositing and etching films extending in a first direction and films extending in a second direction that crosses the first direction to pattern the underlying structures.

公开(公告)号：US11638374B2

公开(公告)日：2023-04-25

申请号：US17720465

申请日：2022-04-14

申请人： Applied Materials, Inc.

发明人： Tejinder Singh ,  Takehito Koshizawa ,  Abhijit Basu Mallick ,  Pramit Manna ,  Nancy Fung ,  Eswaranand Venkatasubramanian ,  Ho-yung David Hwang ,  Samuel E. Gottheim

IPC分类号： H01L27/10 ,  H01L21/02

摘要： Apparatuses and methods to provide a patterned substrate are described. A plurality of patterned and spaced first lines and carbon material lines and formed on the substrate surface by selectively depositing and etching films extending in a first direction and films extending in a second direction that crosses the first direction to pattern the underlying structures.

公开(公告)号：US20230045689A1

公开(公告)日：2023-02-09

申请号：US17968201

申请日：2022-10-18

申请人： Applied Materials, Inc.

发明人： Hao Jiang ,  Chi Lu ,  He Ren ,  Chi-I Lang ,  Ho-yung David Hwang ,  Mehul Naik

IPC分类号： H01L21/768 ,  H01L21/3213 ,  H01L21/306 ,  H01L21/027

摘要： A method of forming an interconnect structure for semiconductor devices is described. The method comprises etching a patterned interconnect stack for form first conductive lines and expose a top surface of a first etch stop layer; etching the first etch stop layer to form second conductive lines and expose a top surface of a barrier layer; and forming a self-aligned via.

公开(公告)号：US20220199401A1

公开(公告)日：2022-06-23

申请号：US17548689

申请日：2021-12-13

申请人： Applied Materials, Inc.

发明人： Yung-Chen Lin ,  Chi-I Lang ,  Ho-yung David Hwang

IPC分类号： H01L21/02 ,  C23C16/30 ,  C23C16/04 ,  C23C16/455

摘要： Methods for depositing boron-containing films on a substrate are described. The substrate is exposed to a boron precursor and a plasma to form the boron-containing film (e.g., elemental boron, boron oxide, boron carbide, boron silicide, boron nitride). The exposures can be sequential or simultaneous. The boron-containing films are selectively deposited on one material (e.g., SiN or Si) rather than on another material (e.g., silicon oxide).