公开(公告)号：US20240363337A1

公开(公告)日：2024-10-31

申请号：US18139699

申请日：2023-04-26

申请人： Applied Materials, Inc.

发明人： Muthukumar Kaliappan ,  Bo Xie ,  Shanshan Yao ,  Li-Qun Xia ,  Michael Haverty ,  Rui Lu ,  Xiaobo Li ,  Chi-I Lang ,  Shankar Venkataraman

IPC分类号： H01L21/02 ,  C23C16/32 ,  C23C16/455 ,  C23C16/56

CPC分类号： H01L21/02167 ,  C23C16/325 ,  C23C16/45542 ,  C23C16/45553 ,  C23C16/45565 ,  C23C16/56 ,  H01L21/02211 ,  H01L21/02274

摘要： Semiconductor processing methods are described for forming low-κ dielectric materials. The methods may include providing deposition precursors to a processing region of a semiconductor processing chamber. The deposition precursors may include a silicon-carbon-and-hydrogen-containing precursor. A substrate may be disposed within the processing region. The methods may include forming plasma effluents of the deposition precursors. The methods may include depositing a layer of silicon-containing material on the substrate. The layer of silicon-containing material may be characterized by a dielectric constant of less than or about 4.0.

公开(公告)号：US12131899B2

公开(公告)日：2024-10-29

申请号：US17326273

申请日：2021-05-20

申请人： SPTS Technologies Limited

发明人： Tristan Harper ,  Kathrine Crook

IPC分类号： H01L21/02 ,  H01L23/00

CPC分类号： H01L21/02167 ,  H01L21/02211 ,  H01L21/02274 ,  H01L24/83 ,  H01L2224/83896

摘要： A hydrogenated silicon carbon nitride (SiCN:H) film is deposited onto a substrate by plasma enhanced chemical vapour deposition (PECVD) comprising: providing the substrate in a chamber; introducing silane (SiH4), a carbon-donating precursor, and nitrogen gas (N2) into the chamber; and sustaining a plasma in the chamber so as to deposit SiCN:H onto the substrate by PECVD, wherein the substrate is maintained at a temperature of less than about 250° C.

公开(公告)号：US20240347465A1

公开(公告)日：2024-10-17

申请号：US18753766

申请日：2024-06-25

申请人： Intel Corporation

发明人： Atul MADHAVAN ,  Nicholas J. KYBERT ,  Mohit K. HARAN ,  Hiten KOTHARI

IPC分类号： H01L23/535 ,  H01L21/02 ,  H01L21/027 ,  H01L21/311 ,  H01L21/768 ,  H01L21/8234 ,  H01L27/088 ,  H01L29/45 ,  H01L29/51

CPC分类号： H01L23/535 ,  H01L21/02126 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/02178 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/76802 ,  H01L21/76877 ,  H01L21/823437 ,  H01L21/823475 ,  H01L27/0886 ,  H01L29/518 ,  H01L21/02164 ,  H01L21/0228 ,  H01L21/0276 ,  H01L21/31144 ,  H01L29/45

摘要： Contact over active gate (COAG) structures with etch stop layers, and methods of fabricating contact over active gate (COAG) structures using etch stop layers, are described. In an example, an integrated circuit structure includes a plurality of gate structures above substrate, each of the gate structures including a gate insulating layer thereon. A plurality of conductive trench contact structures is alternating with the plurality of gate structures, each of the conductive trench contact structures including a trench insulating layer thereon. A first dielectric etch stop layer is directly on and continuous over the trench insulating layers and the gate insulating layers. A second dielectric etch stop layer is directly on and continuous over the first dielectric etch stop layer, the second dielectric etch stop layer distinct from the first dielectric etch stop layer. An interlayer dielectric material is on the second dielectric etch stop layer.

公开(公告)号：US20240332002A1

公开(公告)日：2024-10-03

申请号：US18743882

申请日：2024-06-14

申请人： Micron Technology, Inc.

发明人： Santanu Sarkar ,  Farrell M. Good

IPC分类号： H01L21/02 ,  C01B32/00 ,  C01B33/00 ,  C23C16/04 ,  C23C16/452

CPC分类号： H01L21/02167 ,  C01B32/00 ,  C01B33/00 ,  C23C16/045 ,  C23C16/452 ,  H01L21/02274 ,  H01L21/02381 ,  H01L2221/1047

摘要： An electronic device comprising a stack structure comprising one or more stacks of materials and one or more silicon carbide materials adjacent to the one or more stacks of materials. The materials of the one or more stacks comprise a single chalcogenide material and one or more of a conductive carbon material, a conductive material, and a hardmask material. The one or more silicon carbide materials comprises silicon carbide, silicon carboxide, silicon carbonitride, silicon carboxynitride, and also comprise silicon-carbon covalent bonds. The one or more silicon carbide materials is configured as a liner or as a seal. Additional electronic devices are disclosed, as are related systems and methods of forming an electronic device.

公开(公告)号：US12060641B2

公开(公告)日：2024-08-13

申请号：US17577656

申请日：2022-01-18

申请人： Tokyo Electron Limited

发明人： Hirokazu Ueda ,  Hideki Yuasa ,  Yutaka Fujino ,  Yoshiyuki Kondo ,  Hiroyuki Ikuta

IPC分类号： C23C16/455 ,  C23C16/34 ,  C23C16/36 ,  C23C16/511 ,  H01J37/32 ,  H01L21/02

CPC分类号： C23C16/45536 ,  C23C16/345 ,  C23C16/36 ,  C23C16/511 ,  H01J37/32192 ,  H01J37/32449 ,  H01L21/02274 ,  H01J2237/332 ,  H01L21/02167 ,  H01L21/0217

摘要： A film forming method includes: placing a substrate on which a pattern, which includes a plurality of convex and concave portions, is formed on a stage disposed inside a chamber; and selectively forming a silicon-containing film on the plurality of convex portions of the pattern by applying a bias power to the stage and introducing microwaves into the chamber while supplying a processing gas containing a silicon-containing gas and a nitrogen-containing gas into the chamber to generate plasma, wherein the selectively forming the silicon-containing film includes a first film formation of forming a silicon-containing film around upper sides of the plurality of convex portions and a second film formation of forming a silicon-containing film on upper portions of the plurality of convex portions.

公开(公告)号：US20240263348A1

公开(公告)日：2024-08-08

申请号：US18106732

申请日：2023-02-07

申请人： Robert Bosch GmbH

发明人： Bo CHENG ,  Mordechai KORNBLUTH ,  Charles TUFFILE ,  Jens BARINGHAUS ,  Christian HUBER

IPC分类号： C30B25/16 ,  C30B25/18 ,  C30B29/40 ,  H01L21/02 ,  H01L23/31

CPC分类号： C30B25/16 ,  C30B25/183 ,  C30B29/406 ,  H01L21/022 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254 ,  H01L23/3171 ,  H01L23/3192 ,  H01L21/02126 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/02175 ,  H01L23/291

摘要： A method of manufacturing a structure for power electronics which includes epitaxially growing a GaN semiconductor layer is provided. The method includes growing buffer layers formed of AlN and AlxGa(1-x)N, wherein 0

公开(公告)号：US20240047552A1

公开(公告)日：2024-02-08

申请号：US18319213

申请日：2023-05-17

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Fu-Chiang Kuo ,  Hsin-Liang Chen ,  Hsin-Li Cheng ,  Ting-Chen Hsu

IPC分类号： H01L29/66 ,  H01L21/02 ,  H01L21/033 ,  H01L21/027 ,  H01L21/768 ,  H01L29/94

CPC分类号： H01L29/66181 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02167 ,  H01L21/02271 ,  H01L21/0332 ,  H01L21/0334 ,  H01L21/0274 ,  H01L21/76897 ,  H01L29/945

摘要： The present disclosure provides an embodiment of a method. The method includes patterning a substrate to form trenches; etching the substrate, thereby modifying the trenches with round tips; forming a stack including conductive layers and dielectric layers in the trenches, wherein the conductive layers and the dielectric layers alternate with one another within the stack; forming an insulating compressive film in the first trenches, thereby sealing voids in the trenches; and forming conductive plugs connected to the conductive layers, respectively.

公开(公告)号：US11894227B2

公开(公告)日：2024-02-06

申请号：US17586505

申请日：2022-01-27

申请人： Novellus Systems, Inc.

发明人： Bhadri N. Varadarajan ,  Bo Gong ,  Zhe Gui

IPC分类号： H01L21/02 ,  C23C16/505 ,  C23C16/511 ,  C23C16/32 ,  C23C16/452 ,  H01L29/49 ,  H01L21/768 ,  C23C16/04

CPC分类号： H01L21/02167 ,  C23C16/045 ,  C23C16/325 ,  C23C16/452 ,  C23C16/505 ,  C23C16/511 ,  H01L21/02126 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02222 ,  H01L21/02274 ,  H01L21/76831 ,  H01L21/76834 ,  H01L29/4983 ,  H01L29/4991 ,  H01L21/7682 ,  H01L2221/1047

摘要： Disclosed are methods and systems for providing silicon carbide films. A layer of silicon carbide can be provided under process conditions that employ one or more silicon-containing precursors that have one or more silicon-hydrogen bonds and/or silicon-silicon bonds. The silicon-containing precursors may also have one or more silicon-oxygen bonds and/or silicon-carbon bonds. One or more radical species in a substantially low energy state can react with the silicon-containing precursors to form the silicon carbide film. The one or more radical species can be formed in a remote plasma source.

公开(公告)号：US11843028B2

公开(公告)日：2023-12-12

申请号：US17322087

申请日：2021-05-17

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： I-Wen Wu ,  Fu-Kai Yang ,  Chen-Ming B. Lee ,  Mei-Yun Wang ,  Jr-Hung Li ,  Bo-Cyuan Lu

IPC分类号： H01L29/06 ,  H01L27/088 ,  H01L29/78 ,  H01L21/8234 ,  H01L21/3105 ,  H01L21/02 ,  H01L21/762 ,  H01L21/32

CPC分类号： H01L29/0649 ,  H01L21/0217 ,  H01L21/0228 ,  H01L21/0234 ,  H01L21/02164 ,  H01L21/02167 ,  H01L21/02274 ,  H01L21/02337 ,  H01L21/02359 ,  H01L21/3105 ,  H01L21/31053 ,  H01L21/76224 ,  H01L21/823431 ,  H01L21/823481 ,  H01L27/0886 ,  H01L29/7855 ,  H01L21/32 ,  H01L21/823437

摘要： Semiconductor devices and methods of fabricating semiconductor devices are provided. The present disclosure provides a semiconductor device that includes a first fin structure and a second fin structure each extending from a substrate; a first gate segment over the first fin structure and a second gate segment over the second fin structure; a first isolation feature separating the first and second gate segments; a first source/drain (S/D) feature over the first fin structure and adjacent to the first gate segment; a second S/D feature over the second fin structure and adjacent to the second gate segment; and a second isolation feature also disposed in the trench. The first and second S/D features are separated by the second isolation feature, and a composition of the second isolation feature is different from a composition of the first isolation feature.

公开(公告)号：US20230395370A1

公开(公告)日：2023-12-07

申请号：US18205089

申请日：2023-06-02

申请人： ASM IP Holding B.V.

发明人： SeungHyun Lee

IPC分类号： H01L21/02

CPC分类号： H01L21/02304 ,  H01L21/0228 ,  H01L21/02274 ,  H01L21/02167

摘要： Provided is a substrate processing method for preventing a conductive layer from being oxidized due to activated oxygen gas when filling a gap contacting a conductive layer with oxide film. In an embodiment, a high frequency RF power and a low frequency RF power may be applied to form a dense protective layer in the lower portion of the gap and prevent the activated oxygen gas from reacting with and oxidizing the conductive layer when forming an insulating layer on the protective layer. In another embodiment, a film conversion gas and an inhibiting gas may be supplied to improve a step coverage of the protective layer and a uniform blocking to the activated oxygen gas into the conductive layer along the surface of the gap.