公开(公告)号：US20230411931A1

公开(公告)日：2023-12-21

申请号：US17841983

申请日：2022-06-16

Applicant: Applied Optoelectronics, Inc.

Inventor： Dapeng XU ,  Dion MCINTOSH-DORSEY ,  Huanlin ZHANG

IPC: H01S5/227 ,  H01S5/22

CPC classification number: H01S5/227 ,  H01S5/34 ,  H01S5/2205

Abstract: A semiconductor optical device including a buried heterostructure (BH) has reduced parasitic capacitance and reduced inter-diffusion. The semiconductor optical device is manufactured by a regrowth on both sides of a mesa structure with an Fe-doped current blocking layer and an n-type cladding layer outside of an active region in the mesa structure. The Fe-doped current blocking layer and the n-type cladding layer may be disposed and configured such that Fe/Zn inter-diffusion is reduced or prevented by minimal contact between the Fe-doped current blocking layer and a highly Zn-doped cladding layer and by the n-type cladding layer, as will be described in greater detail below. A low Zn-doped or undoped material may be used for a thin cladding layer above the active region in the mesa structure to further suppress Zn/Fe inter-diffusion.