公开(公告)号：US20240332897A1

公开(公告)日：2024-10-03

申请号：US18477423

申请日：2023-09-28

申请人： Lumentum Operations LLC

发明人： Atsushi NAKAMURA

IPC分类号： H01S5/12 ,  H01S5/028 ,  H01S5/125

CPC分类号： H01S5/1206 ,  H01S5/028 ,  H01S5/1237 ,  H01S5/124 ,  H01S5/125 ,  H01S5/0421 ,  H01S5/34

摘要： To obtain both a high power and a single mode oscillation of a semiconductor laser, the semiconductor laser includes a diffraction grating layer. The diffraction grating layer includes a λ/4 phase shift portion, and includes first and second regions. The first region has a diffraction pattern arranged therein, the diffraction pattern being formed to reflect a light beam having a Bragg wavelength and having first and second refractive index regions alternately arranged therein. The second region is provided with a first portion that reflects the light beam having the Bragg wavelength in the first region and a second portion that transmits the Bragg wavelength in the first region. The second portion is formed of the first and second refractive index regions. A total length of the first portion in a direction in which the diffraction grating layer extends is shorter than a length of the first region.

公开(公告)号：US20240291240A1

公开(公告)日：2024-08-29

申请号：US18655906

申请日：2024-05-06

申请人： FURUKAWA ELECTRIC CO., LTD.

发明人： Junji YOSHIDA ,  Hirokazu ITOH ,  Satoshi IRINO ,  Yuichiro IRIE ,  Taketsugu SAWAMURA

IPC分类号： H01S5/32 ,  B82Y20/00 ,  H01S3/04 ,  H01S3/067 ,  H01S3/094 ,  H01S3/0941 ,  H01S3/30 ,  H01S5/00 ,  H01S5/02251 ,  H01S5/02253 ,  H01S5/024 ,  H01S5/028 ,  H01S5/10 ,  H01S5/14 ,  H01S5/20 ,  H01S5/22 ,  H01S5/227 ,  H01S5/34 ,  H01S5/343

CPC分类号： H01S5/3216 ,  H01S3/0675 ,  H01S3/06754 ,  H01S5/02251 ,  H01S5/02253 ,  H01S5/1064 ,  H01S5/2018 ,  H01S5/2077 ,  H01S5/2205 ,  H01S5/2206 ,  H01S5/227 ,  H01S5/3213 ,  H01S5/34 ,  H01S5/3406 ,  H01S5/34306 ,  H01S5/3434 ,  B82Y20/00 ,  H01S3/04 ,  H01S3/094003 ,  H01S3/094011 ,  H01S3/09415 ,  H01S3/302 ,  H01S5/0064 ,  H01S5/024 ,  H01S5/0287 ,  H01S5/1039 ,  H01S5/146 ,  H01S5/2222 ,  H01S2301/03 ,  H01S2301/166

摘要： An optical semiconductor device outputting a predetermined wavelength of laser light includes a quantum well active layer positioned between a p-type cladding layer and an n-type cladding layer in thickness direction. The optical semiconductor device includes a separate confinement heterostructure layer positioned between the quantum well active layer and the n-type cladding layer. The optical semiconductor device further includes an electric-field-distribution-control layer positioned between the separate confinement heterostructure layer and the n-type cladding layer and configured by at least two semiconductor layers having band gap energy greater than band gap energy of a barrier layer constituting the quantum well active layer. The optical semiconductor device is applied to a ridge-stripe type laser.

公开(公告)号：US20240266469A1

公开(公告)日：2024-08-08

申请号：US18629555

申请日：2024-04-08

申请人： Silanna UV Technologies Pte Ltd

发明人： Petar Atanackovic

IPC分类号： H01L33/26 ,  H01L21/02 ,  H01L23/66 ,  H01L27/15 ,  H01L29/15 ,  H01L29/20 ,  H01L29/24 ,  H01L29/267 ,  H01L29/51 ,  H01L29/66 ,  H01L29/778 ,  H01L29/786 ,  H01L33/00 ,  H01L33/06 ,  H01L33/16 ,  H01L33/18 ,  H01L33/62 ,  H01S5/34

CPC分类号： H01L33/26 ,  H01L21/02178 ,  H01L21/02192 ,  H01L21/02194 ,  H01L21/0228 ,  H01L21/02458 ,  H01L21/02507 ,  H01L23/66 ,  H01L27/15 ,  H01L29/151 ,  H01L29/2003 ,  H01L29/24 ,  H01L29/267 ,  H01L29/517 ,  H01L29/66462 ,  H01L29/7869 ,  H01L33/002 ,  H01L33/007 ,  H01L33/06 ,  H01L33/16 ,  H01L33/18 ,  H01L33/62 ,  H01S5/34 ,  H01L29/778 ,  H01L29/7786 ,  H01L2223/6627

摘要： The techniques described herein relate to a transistor including a substrate including sapphire, an epitaxial channel layer on the substrate, and an epitaxial gate layer on the channel layer. The epitaxial channel layer can include α-Ga2O3, with a first bandgap. The epitaxial gate layer can include an oxide material with a second bandgap, wherein the second bandgap is wider than the first bandgap. The transistor can also include electrical contacts, including: a source electrical contact coupled to the epitaxial channel layer; a drain electrical contact coupled to the epitaxial channel layer; and a gate electrical contact coupled to the epitaxial gate layer.

公开(公告)号：US20240258460A1

公开(公告)日：2024-08-01

申请号：US18629606

申请日：2024-04-08

申请人： Silanna UV Technologies Pte Ltd

发明人： Petar Atanackovic

IPC分类号： H01L33/26 ,  H01L21/02 ,  H01L23/66 ,  H01L27/15 ,  H01L29/15 ,  H01L29/20 ,  H01L29/24 ,  H01L29/267 ,  H01L29/51 ,  H01L29/66 ,  H01L29/778 ,  H01L29/786 ,  H01L33/00 ,  H01L33/06 ,  H01L33/16 ,  H01L33/18 ,  H01L33/62 ,  H01S5/34

CPC分类号： H01L33/26 ,  H01L21/02178 ,  H01L21/02192 ,  H01L21/02194 ,  H01L21/0228 ,  H01L21/02458 ,  H01L21/02507 ,  H01L23/66 ,  H01L27/15 ,  H01L29/151 ,  H01L29/2003 ,  H01L29/24 ,  H01L29/267 ,  H01L29/517 ,  H01L29/66462 ,  H01L29/7869 ,  H01L33/002 ,  H01L33/007 ,  H01L33/06 ,  H01L33/16 ,  H01L33/18 ,  H01L33/62 ,  H01S5/34 ,  H01L29/778 ,  H01L29/7786 ,  H01L2223/6627

摘要： The techniques described herein relate to a transistor, including a substrate, an epitaxial buffer layer, an epitaxial channel layer, and a gate layer. The substrate includes a first oxide material with a first crystal symmetry, the epitaxial buffer layer includes a second oxide material with a second crystal symmetry, the epitaxial channel layer includes a third oxide material with a third crystal symmetry and a first bandgap, and the gate layer includes a fourth oxide material with a second bandgap. The first crystal symmetry is different from either the second crystal symmetry or the third crystal symmetry, and the second bandgap is wider than the first bandgap. The transistor also includes electrical contacts including a source electrical contact coupled to the epitaxial channel layer, a drain electrical contact coupled to the epitaxial channel layer, and a gate electrical contact coupled to the gate layer.

公开(公告)号：US20240204484A1

公开(公告)日：2024-06-20

申请号：US18084896

申请日：2022-12-20

申请人： Applied Optoelectronics, Inc.

发明人： Dapeng XU ,  Klaus Alexander ANSELM ,  Huanlin ZHANG

IPC分类号： H01S5/20 ,  H01S5/02 ,  H01S5/227

CPC分类号： H01S5/2054 ,  H01S5/0206 ,  H01S5/2275 ,  H01S5/34

摘要： A multi-section semiconductor optical amplifier (SOA) includes at least two sections in series—an input section at an input side and an output section at an output side—with the input section having a higher optical confinement (also referred to as a high gamma) and the output section having a lower optical confinement (also referred to as a low gamma). The input section may also have a shorter length than the output section. The multi-section structure allows optimizing the input side and the output side design separately such that the input section provides a high gain section configured to quickly increase optical power and the output section provides a low differential gain section that improves saturation. As a result, the multi-section SOA can achieve higher output power with high gain and lower signal noise while demanding low input power.

公开(公告)号：US12009636B2

公开(公告)日：2024-06-11

申请号：US18164285

申请日：2023-02-03

申请人： FURUKAWA ELECTRIC CO., LTD.

发明人： Junji Yoshida ,  Hirokazu Itoh ,  Satoshi Irino ,  Yuichiro Irie ,  Taketsugu Sawamura

IPC分类号： H01S5/00 ,  H01S3/067 ,  H01S5/02251 ,  H01S5/02253 ,  H01S5/10 ,  H01S5/20 ,  H01S5/22 ,  H01S5/227 ,  H01S5/32 ,  H01S5/34 ,  H01S5/343 ,  B82Y20/00 ,  H01S3/04 ,  H01S3/094 ,  H01S3/0941 ,  H01S3/30 ,  H01S5/024 ,  H01S5/028 ,  H01S5/14

CPC分类号： H01S5/3216 ,  H01S3/0675 ,  H01S3/06754 ,  H01S5/02251 ,  H01S5/02253 ,  H01S5/1064 ,  H01S5/2018 ,  H01S5/2077 ,  H01S5/2205 ,  H01S5/2206 ,  H01S5/227 ,  H01S5/3213 ,  H01S5/34 ,  H01S5/3406 ,  H01S5/34306 ,  H01S5/3434 ,  B82Y20/00 ,  H01S3/04 ,  H01S3/094003 ,  H01S3/094011 ,  H01S3/09415 ,  H01S3/302 ,  H01S5/0064 ,  H01S5/024 ,  H01S5/0287 ,  H01S5/1039 ,  H01S5/146 ,  H01S5/2222 ,  H01S2301/03 ,  H01S2301/166

摘要： An optical semiconductor device outputting a predetermined wavelength of laser light includes a quantum well active layer positioned between a p-type cladding layer and an n-type cladding layer in thickness direction. The optical semiconductor device includes a separate confinement heterostructure layer positioned between the quantum well active layer and the n-type cladding layer. The optical semiconductor device further includes an electric-field-distribution-control layer positioned between the separate confinement heterostructure layer and the n-type cladding layer and configured by at least two semiconductor layers having band gap energy greater than band gap energy of a barrier layer constituting the quantum well active layer. The optical semiconductor device is applied to a ridge-stripe type laser.

公开(公告)号：US11909172B2

公开(公告)日：2024-02-20

申请号：US17141223

申请日：2021-01-05

申请人： ASAHI KASEI KABUSHIKI KAISHA ,  National University Corporation Tokai National Higher Education and Research System

发明人： Ziyi Zhang ,  Maki Kushimoto ,  Hiroshi Amano

IPC分类号： H01S5/026 ,  H01S5/22 ,  H01S5/02 ,  H01S5/40 ,  H01S5/028 ,  H01S5/34 ,  H01S5/32

CPC分类号： H01S5/0264 ,  H01S5/0201 ,  H01S5/0287 ,  H01S5/22 ,  H01S5/4031 ,  H01S5/3215 ,  H01S5/34 ,  H01S2301/176 ,  H01S2304/04

摘要： An object of the present invention is to provide a method for manufacturing an optical device having a laser diode, which method is suitable for mass production, and an optical device having a laser diode which allows accurate property evaluations thereof with small measurement errors. Specifically, the method includes: an etching process of etching a semiconductor lamination unit to form a mesa structure having a resonator end face, thereby forming a laser diode; and a reflecting layer forming process of forming a light reflecting layer such that the light reflecting layer covers entire side surfaces of the mesa structure, wherein the semiconductor lamination unit has a substate, a n-type clad layer including a nitride semiconductor layer having n-type conductivity, a light-emitting layer including at least one quantum well, and a p-type clad layer including a nitride semiconductor layer having p-type conductivity, laminated in this order.

公开(公告)号：US20240055832A1

公开(公告)日：2024-02-15

申请号：US17766315

申请日：2020-02-24

申请人： Shenzhen Raysees AI Technology Co., Ltd.

发明人： Dongseok Kang ,  Yongxiang He ,  SIVA KUMAR LANKA ,  Yang Wang

IPC分类号： H01S5/183 ,  H01S5/42 ,  H01S5/042

CPC分类号： H01S5/18311 ,  H01S5/423 ,  H01S5/18361 ,  H01S5/04256 ,  H01S5/34

摘要： A VCSEL array comprises a plurality of non-isolated VCSEL emitters. Each non-isolated VCSEL emitter comprises a first reflector region, a current confining oxide layer, an oxide aperture, an active region, and a second reflector region. The current confining oxide layer and oxide aperture are made by oxidizing a relatively high Al-content layer via separate oxidation holes. The separate oxidation holes surround the oxide aperture. The first reflector regions of the plurality of non-isolated VCSEL structures are connected such that they are not isolated from each other completely by any isolation structure, and the second reflector regions of the plurality of non-isolated VCSEL structures are connected such that they are not isolated from each other completely by any isolation structure.

公开(公告)号：US20240030681A1

公开(公告)日：2024-01-25

申请号：US18354666

申请日：2023-07-19

申请人： SEIKO EPSON CORPORATION

发明人： Takashi MIYATA ,  Yoji KITANO

IPC分类号： H01S5/042 ,  H01S5/34

CPC分类号： H01S5/0425 ,  H01S5/34 ,  G03B21/2033

摘要： A light-emitting device includes a light-emitting unit, an insulating layer, and a conductive layer to which a predetermined potential is applied. The light-emitting unit includes a first semiconductor layer, a second semiconductor layer having a conductivity type different from a conductivity type of the first semiconductor layer, and a light-emitting layer provided between the first semiconductor layer and the second semiconductor layer. The insulating layer covers the light-emitting unit. The conductive layer is provided in the insulating layer and electrically separated from the light-emitting unit.

公开(公告)号：US20240022046A1

公开(公告)日：2024-01-18

申请号：US17865597

申请日：2022-07-15

申请人： Mellanox Technologies, Ltd.

发明人： Petter Westbergh

IPC分类号： H01S5/183 ,  H01S5/34 ,  H01S5/125

CPC分类号： H01S5/18394 ,  H01S5/18361 ,  H01S5/34 ,  H01S5/125

摘要： Vertical-cavity surface-emitting lasers (VCSELs) and associated methods of manufacturing are provided. An example VCSEL includes a first reflector, a second reflector, and an active region disposed between the first reflector and the second reflector. The VCSEL further includes an electrical aperture defining a current confinement region configured to direct current to the active region and an optical aperture defining a medium through which light produced by the active region is emitted from the VCSEL. At least one dimension of the optical aperture of the VCSEL is formed independent of the electrical aperture of the VCSEL. In some instances, the dimension of the optical aperture is a first diameter such that the first diameter of the optical aperture is formed independent of a second diameter defined by the electrical aperture.