公开(公告)号：US20210210930A1

公开(公告)日：2021-07-08

申请号：US16737453

申请日：2020-01-08

Applicant: Applied Optoelectronics, Inc.

Inventor： Kai-Sheng LIN ,  Yaohui GAO ,  Huanlin ZHANG

IPC: H01S5/343 ,  H01S5/042 ,  H01S5/022

Abstract: In general, a MQW semiconductor laser chip with an electrically insulated P-side region and a process for forming the same is disclosed. The MQW semiconductor laser chip, also referred to herein as a MQW semiconductor laser or simply a semiconductor laser, includes a layer of electrically insulative material that extends along at least a portion of the sidewalls to minimize or otherwise reduce the potential for electrical shorts between P and N-sides of the same when utilizing P-side bonding techniques.