公开(公告)号：US20200227515A1

公开(公告)日：2020-07-16

申请号：US16248496

申请日：2019-01-15

Applicant: Arm Limited

Inventor： Lucian Shifren ,  Carlos Alberto Paz de Araujo ,  Jolanta Bozena Celinska ,  Saurabh Vinayak Suryavanshi

IPC: H01L49/02 ,  H01L27/11502 ,  H01L29/78

Abstract: Briefly, embodiments of claimed subject matter relate to devices and methods for formation of ferroelectric materials utilizing transition metals, transition metal oxides, post transition metals, and/or post transition metal oxides, which may be doped with bismuth (Bi) in a concentration of between about 0.001% to about 25.0%. Alternatively, a dopant may include bismuth oxide (Bi2O3) or may include bismuth aluminum oxide ((BixAl1−x)2O3). In particular embodiments, such utilization of bismuth and/or related dopants may bring about stabilization of relatively thin ferroelectric devices.

公开(公告)号：US20200295260A1

公开(公告)日：2020-09-17

申请号：US16850875

申请日：2020-04-16

Applicant: Arm Limited

Inventor： Xueming Huang ,  Ming He ,  Marinela Barci ,  Paul Raymond Besser ,  Saurabh Vinayak Suryavanshi ,  Lucian Shifren

IPC: H01L45/00

Abstract: Subject matter disclosed herein may relate to fabrication of a correlated electron material (CEM) device. Layers of a CEM to form a correlated electron switch (CES) device may be disposed between layers of electrode material. In an embodiment, one or more techniques may be employed to remove and/or neutralize parasitic features and/or devices introduced during manufacture of the CEM device.