公开(公告)号：US10672982B1

公开(公告)日：2020-06-02

申请号：US16206725

申请日：2018-11-30

Applicant: Arm Limited

Inventor： Ming He ,  Paul Raymond Besser ,  Jingyan Zhang ,  Manuj Rathor

IPC: H01L45/00 ,  G11C13/00

Abstract: Subject matter disclosed herein may relate to fabrication of a correlated electron material (CEM) switch. In particular embodiments a method may include forming a structure on a first portion of a substrate while maintaining a second portion of the substrate exposed. A sealing layer may be deposited over the structure and over at least a portion of the exposed second portion of the substrate. A conductive via may be formed by way of a dry etch through the sealing layer to contact the exposed metal layer. In embodiments, an etch-stop control layer may be utilized to control an etching process prior to formation of metal contacts over the CEM switch and the conductive via.

公开(公告)号：US10854811B2

公开(公告)日：2020-12-01

申请号：US16163190

申请日：2018-10-17

Applicant: Arm Limited

Inventor： Paul Raymond Besser ,  Ming He ,  Jolanta Bozena Celinska

IPC: H01L45/00

Abstract: Subject matter disclosed herein may relate to fabrication of a correlated electron material (CEM) switch. In particular embodiments, formation of a CEM switch may include removing of an exposed portion of a CEM film to form an exposed sidewall region bordering a remaining unexposed portion of the CEM film under or beneath a conductive overlay. The method may further include at least partially restoring properties of the exposed sidewall region to a CEM via exposure of the exposed sidewall region to one or more gaseous annealing agents.

公开(公告)号：US20200295260A1

公开(公告)日：2020-09-17

申请号：US16850875

申请日：2020-04-16

Applicant: Arm Limited

Inventor： Xueming Huang ,  Ming He ,  Marinela Barci ,  Paul Raymond Besser ,  Saurabh Vinayak Suryavanshi ,  Lucian Shifren

IPC: H01L45/00

Abstract: Subject matter disclosed herein may relate to fabrication of a correlated electron material (CEM) device. Layers of a CEM to form a correlated electron switch (CES) device may be disposed between layers of electrode material. In an embodiment, one or more techniques may be employed to remove and/or neutralize parasitic features and/or devices introduced during manufacture of the CEM device.

公开(公告)号：US20200176676A1

公开(公告)日：2020-06-04

申请号：US16206725

申请日：2018-11-30

Applicant: Arm Limited

Inventor： Ming He ,  Paul Raymond Besser ,  Jingyan Zhang ,  Manuj Rathor

IPC: H01L45/00 ,  G11C13/00

Abstract: Subject matter disclosed herein may relate to fabrication of a correlated electron material (CEM) switch. In particular embodiments a method may include forming a structure on a first portion of a substrate while maintaining a second portion of the substrate exposed. A sealing layer may be deposited over the structure and over at least a portion of the exposed second portion of the substrate. A conductive via may be formed by way of a dry etch through the sealing layer to contact the exposed metal layer. In embodiments, an etch-stop control layer may be utilized to control an etching process prior to formation of metal contacts over the CEM switch and the conductive via.

公开(公告)号：US20200127196A1

公开(公告)日：2020-04-23

申请号：US16163190

申请日：2018-10-17

Applicant: Arm Limited

Inventor： Paul Raymond Besser ,  Ming He ,  Jolanta Bozena Celinska

IPC: H01L45/00

Abstract: Subject matter disclosed herein may relate to fabrication of a correlated electron material (CEM) switch. In particular embodiments, formation of a CEM switch may include removing of an exposed portion of a CEM film to form an exposed sidewall region bordering a remaining unexposed portion of the CEM film under or beneath a conductive overlay. The method may further include at least partially restoring properties of the exposed sidewall region to a CEM via exposure of the exposed sidewall region to one or more gaseous annealing agents.

公开(公告)号：US20200295259A1

公开(公告)日：2020-09-17

申请号：US16890881

申请日：2020-06-02

Applicant: Arm Limited

Inventor： Ming He ,  Paul Raymond Besser ,  Jingyan Zhang ,  Manuj Rathor

IPC: H01L45/00 ,  G11C13/00

Abstract: Subject matter disclosed herein may relate to fabrication of a correlated electron material (CEM) switch. In particular embodiments a method may include forming a structure on a first portion of a substrate while maintaining a second portion of the substrate exposed. A sealing layer may be deposited over the structure and over at least a portion of the exposed second portion of the substrate. A conductive via may be formed by way of a dry etch through the sealing layer to contact the exposed metal layer. In embodiments, an etch-stop control layer may be utilized to control an etching process prior to formation of metal contacts over the CEM switch and the conductive via.

公开(公告)号：US20200259083A1

公开(公告)日：2020-08-13

申请号：US16271377

申请日：2019-02-08

Applicant: Arm Limited

Inventor： Ming He ,  Paul Raymond Besser

IPC: H01L45/00

Abstract: Disclosed is a method for the fabrication of a correlated electron material (CEM) device to an comprising: forming a layer of a conductive substrate on a substrate; forming a layer of a correlated electron material on the layer of conductive substrate; forming a layer of a conductive overlay on the layer of correlated electron material; patterning these layers to form a stack comprising a conductive substrate, a CEM layer and a conductive overlay on the substrate; forming a cover layer of an insulating material over the stack; and patterning the cover layer wherein: the patterning of the cover layer comprises etching a via in the cover layer whereby to expose a part of the upper surface of the conductive overlay and etching a trench in the cover layer such that the trench surrounds the via.