公开(公告)号：US09117838B2

公开(公告)日：2015-08-25

申请号：US13860190

申请日：2013-04-10

Applicant: BAE Systems Information and Electronic Systems Integration Inc.

Inventor： Dong Xu ,  Xiaoping S. Yang ,  Wendell Kong ,  Lee M. Mohnkern ,  Phillip M. Smith ,  Pane-chane Chao

IPC: H01L29/66 ,  H01L29/778

CPC classification number: H01L29/66431 ,  H01L29/7784 ,  H01L29/7785

Abstract: A high-power and high-gain ultra-short gate HEMT device has exceptional gain and an exceptionally high breakdown voltage provided by an increased width asymmetric recess for the gate electrode, by a composite channel layer including a thin indium arsenide layer embedded in the indium gallium arsenide channel layer and by double doping through the use of an additional silicon doping spike. The improved transistor has an exceptional 14 dB gain at 110 GHz and exhibits an exceptionally high 3.5-4 V breakdown voltage, thus to provide high gain, high-power and ultra-high frequency in an ultra-short gate device.

Abstract translation: 高功率和高增益超短栅极HEMT器件具有特别的增益和由栅极电极的增加宽度不对称凹槽提供的异常高的击穿电压，通过复合沟道层，其包括嵌入在铟中的薄的砷化铟层 砷化镓沟道层，并通过使用额外的硅掺杂尖峰进行双掺杂。 改进的晶体管在110 GHz时具有超强的14 dB增益，并具有极高的3.5-4 V击穿电压，从而在超短栅极器件中提供高增益，大功率和超高频。