公开(公告)号：US20190144999A1

公开(公告)日：2019-05-16

申请号：US16092577

申请日：2017-04-10

Applicant: BASF SE

Inventor： Carolin LIMBURG ,  Daniel LOEFFLER ,  Hagen WILMER ,  Marc WALTER ,  Matthias REINERS

IPC: C23C16/455 ,  H01L21/285 ,  C07F15/06 ,  C07F15/04

Abstract: The present invention is in the field of processes for the generation of thin inorganic films on substrates. In particular, the present invention relates to a process comprising bringing a compound of general formula (I) into the gaseous or aerosol state Lm—M—Xn (I) and depositing the compound of general formula (I) from the gaseous or aerosol state onto a solid substrate, wherein R is independent of each other hydrogen, an alkyl group, an alkenyl group, an aryl group or a silyl group, p is 1, 2 or 3, M is Ni or Co, X is a σ-donating ligand which coordinates M, wherein if present at least one X is a ligand which coordinates M via a phosphor or nitrogen atom, m is 1 or 2 and n is 0 to 3.

公开(公告)号：US20190248821A1

公开(公告)日：2019-08-15

申请号：US16318573

申请日：2017-07-14

Applicant: BASF SE

Inventor： Carolin LIMBURG ,  Daniel LOEFFLER ,  Hagen WILMER ,  Marc WALTER ,  Matthias REINERS

IPC: C07F15/04 ,  C07F15/06 ,  C23C16/455

CPC classification number: C07F15/04 ,  C07F15/06 ,  C23C16/45553

Abstract: The present invention relates to a process for generating a thin inorganic film on a substrate. In particular, the present invention relates to a process in which a compound of formula (I) is brought into a gaseous or an aerosol state and deposited from the gaseous or aerosol state onto a solid substrate: In the formula (I), R1, R2, R3, R4, and R5 are independently hydrogen, an alkyl group, an alkenyl group, an aryl group or a silyl group; p is 1, 2; M is Ni or Co; X is a σ-donating ligand which coordinates M; m is 1 or 2; and n is 0 to 3.