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公开(公告)号：US20170233865A1
公开(公告)日：2017-08-17
申请号：US15501631
申请日：2015-07-24
Applicant: BASF SE
Inventor： Julia STRAUTMANN , Rocco PACIELLO , Thomas SCHAUB , Kerstin SCHIERLE-ARNDT , Daniel LOEFFLER , Hagen WILMER , Felix EICKEMEYER , Florian BLASBERG , Carolin LIMBURG
IPC: C23C16/18 , C23C16/455
CPC classification number: C23C16/18 , C23C16/45553
Abstract: The present invention is in the field of processes for the generation of thin inorganic films on substrates. More specifically, the present invention relates to a process comprising bringing a compound of general formula (I) into the gaseous or aerosol state and depositing the compound of general formula (I) from the gaseous or aerosol state onto a solid substrate, wherein R11, R12, R13, R14, R15, R16, R17, R18 are independent of each other hydrogen, an alkyl group, an aryl group, or a trialkylsilyl group, R21, R22, R23, R24 are independent of each other an alkyl group, an aryl group, or a trialkylsilyl group, n is 1 or 2, M is a metal or semimetal, X is a ligand which coordinates M, and m is an integer from 0 to 3.
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公开(公告)号：US20160348243A1
公开(公告)日：2016-12-01
申请号：US15114666
申请日：2015-01-22
Applicant: BASF SE
Inventor： Ke XU , Christian SCHILDKNECHT , Jan SPIELMANN , Juergen FRANK , Florian BLASBERG , Daniel LOEFFLER , Martin GAERTNER , Sabine WEIGUNY , Kerstin SCHIERLE-ARNDT , Katharina FEDERSEL , Falko ABELS
IPC: C23C16/455 , C07F15/06 , C07F15/04 , B01J13/00 , C07F3/00
CPC classification number: C23C16/45553 , C07F3/00 , C07F3/003 , C07F15/045 , C07F15/065
Abstract: The present invention relates to a process for the generation of thin inorganic films on substrates, in particular an atomic layer deposition process. This process comprises bringing a compound of general formula (I) into the gaseous or aerosol state and depositing the compound of general formula (I) from the gaseous or aerosol state onto a solid substrate, wherein R1, R2, R3, R4, R5, and R6 are independent of each other hydrogen, an alkyl group, or a trialkylsilyl group, n is an integer from 1 to 3, M is a metal or semimetal, 1 X is a ligand which coordinates M, and m is an integer from 0 to 4.
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公开(公告)号：US20190393494A1
公开(公告)日：2019-12-26
申请号：US16489895
申请日：2018-02-21
Applicant: BASF SE
Inventor： Frank KLEINE JAEGER , Tillmann LIEBSCH , Michael SCHOENHERR , Dominik GARELLA , Fatih CETINEL , Heino SOMMER , Maraike AHLF , Daniel LOEFFLER , Regina VOGELSANG , Jacob HAAG
IPC: H01M4/36 , C23C16/44 , C23C16/442 , C23C16/455 , H01M4/505 , H01M4/525 , H01M10/0525
Abstract: The present invention is related to a process for coating anoxide material, said process comprising the following steps: (a) providing a particulate material selected from lithiated nickel-cobalt aluminum oxides, lithiated cobalt-manganese oxides and lithiated layered nickel-cobalt-manganese oxides, (b) treating said cathode active material with a metal alkoxide or metal amide or alkyl metal compound, (c) treating the material obtained in step (b) with moisture, and, optionally, repeating the sequence of steps (b) and (c), wherein steps (b) and (c) are carried out in a mixer that mechanically introduces mixing energy into the particulate material, or by way of a moving bed or fixed bed, and wherein steps (b) and (c) are carried out at a pressure that is in the range of from 5 mbar to 1 bar above normal pressure.
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公开(公告)号：US20190144998A1
公开(公告)日：2019-05-16
申请号：US15779570
申请日：2016-11-29
Applicant: BASF SE
Inventor： Falko ABELS , David Dominique SCHWEINFURTH , Karl MATOS , Daniel LOEFFLER , Maraike AHLF , Florian BLASBERG , Thomas SCHAUB , Jan SPIELMANN , Axel KIRSTE , Boris GASPAR
IPC: C23C16/455 , C07F9/50 , C07F9/6584 , C23C16/06
Abstract: The present invention is in the field of processes for the generation of thin inorganic films on substrates, in particular atomic layer deposition processes. It relates to a process for preparing metal films comprising (a) depositing a metal-containing compound from the gaseous state onto a solid substrate and (b) bringing the solid substrate with the deposited metal-containing compound in contact with a reducing agent in the gaseous state, wherein the reducing agent is or at least partially forms at the surface of the solid substrate a carbene, a silylene or a phosphor radical.
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公开(公告)号：US20180346501A1
公开(公告)日：2018-12-06
申请号：US15779893
申请日：2016-11-30
Applicant: BASF SE , GEORG-AUGUST-UNIVERSITÄT GÖTTINGEN
Inventor： Torben ADERMANN , Daniel LOEFFLER , Hagen WILMER , Kerstin SCHIERLE-ARNDT , Jan GERKENS , Christian VOLKMANN , Sven SCHNEIDER
Abstract: The present invention is in the field of processes for the generation of thin inorganic films on substrates, in particular atomic layer deposition processes. The present invention relates to a process comprising bringing a compound of general formula (I) into the gaseous or aerosol state and depositing the compound of general formula (I) from the gaseous or aerosol state onto a solid substrate, wherein M is Mn, Ni or Co, X is a ligand which coordinates M, n is 0, 1, or 2, R 1, R2 are an alkyl group, an alkenyl group, an aryl group or a silyl group, m is 1, 2, or 3, R3, R4, and R5 are an alkyl group, an alkenyl group, an aryl group, an alkoxy group, or an aryloxy group, and p is 1, 2 or 3.
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Patent Agency Ranking
公开(公告)号：US20180044357A1
公开(公告)日：2018-02-15
申请号：US15557178
申请日：2016-03-02
Applicant: BASF SE
Inventor： Jan SPIELMANN , Falko ABELS , Florian BLASBERG , Katharina FEDERSEL , Christian SCHILDKNECHT , Daniel LOEFFLER , Torben ADERMANN , Juergen FRANK , Kerstin SCHIERLE-ARNDT , Sabine WEIGUNY
IPC: C07F7/08 , C23C16/455 , C23C16/18 , C09D1/00
CPC classification number: C07F7/0814 , C07D207/08 , C09D1/00 , C23C16/18 , C23C16/409 , C23C16/45553
Abstract: The present invention is in the field of processes for the generation of thin inorganic films on substrates. In particular the present invention relates to a process comprising bringing a com-pound of general formula (I) into the gaseous or aerosol state Ln-M-XmL=formula and depositing the compound of general formula (I) from the gaseous or aerosol state onto a solid substrate, wherein R1, R2, R3, R4, are independent of each other hydrogen, an alkyl group, an aryl group, or a SiA3 group with A being an alkyl or aryl group, and at least two of R1, R2, R3, R4 are a SiA3 group, n is an integer from 1 to 4, M is a metal or semimetal, X is a ligand which coordinates M, and m is an integer from 0 to 4.
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公开(公告)号：US20230274930A1
公开(公告)日：2023-08-31
申请号：US18004348
申请日：2021-06-29
Applicant: BASF SE
Inventor： Chi Yueh KAO , Mei Chin SHEN , Andreas KLIPP , Haci Osman GUEVENC , Daniel LOEFFLER
CPC classification number: H01L21/0206 , C11D3/3734 , C11D3/3738 , C11D7/5022 , C11D7/5027 , C11D11/0047 , G03F7/40
Abstract: Described herein is a non-aqueous composition including
(a) an organic solvent; and
(b) at least one additive of formulae I or II
where
R1 is H
R2 is selected from the group consisting of H, C1 to C10 alkyl, C1 to C10 alkoxy, C6 to C10 aryl, and C6 to C10 aroxy,
R3 is selected from the group consisting of R2,
R4 is selected from the group consisting of C1 to C10 alkyl, C1 to C10 alkoxy, C6 to C10 aryl, and C6 to C10 aroxy,
R10, R12 are independently selected from the group consisting of C1 to C19 alkyl and C1 to C10 alkoxy,
m is 1, 2 or 3, and
n is 0 or an integer from 1 to 100.-
公开(公告)号：US20230235252A1
公开(公告)日：2023-07-27
申请号：US17999734
申请日：2021-05-12
Applicant: BASF SE
Inventor： Chi Yueh KAO , Mei Chin SHEN , Daniel LOEFFLER , Andreas KLIPP , Haci Osman GUEVENC
CPC classification number: C11D7/04 , C11D7/5022 , C11D11/0047 , H01L21/02063
Abstract: Described herein is a method of using a composition including 0.1 to 3% by weight ammonia and a C1 to C4 alkanol. The method includes using the composition for anti-pattern collapse treatment of a substrate including patterned material layers having line-space dimensions with a line width of 50 nm or less, aspect ratios of greater than or equal to 4, or a combination thereof.
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公开(公告)号：US20210198602A1
公开(公告)日：2021-07-01
申请号：US17057801
申请日：2019-05-13
Applicant: BASF SE
Inventor： Marcel BRILL , Daniel LOEFFLER , Yeni BURK , Frank PIRRUNG , Lothar ENGELBRECHT , Szilard CSIHONY , Maike BERGELER , Volodymyr BOYKO , Patrick WILKE
Abstract: The invention relates to the use of a composition comprising a C1 to C6 alkanol and a carboxylic acid ester of formula (I) wherein R1 is selected from a C1 to C6 alkyl, which may be unsubstituted or substituted by OH or F, and —X21—[O—X22]n—H; R2 is selected from a C1 to C6 alkyl, which may be unsubstituted or substituted by OH or F, and —X21—[O—X22]n—H; X21, X22 are independently selected from C1 to C6 alkandiyl, which may be unsubstituted or substituted by OH or F; n is an integer from 1 to 5. wherein, the C1 to C6 alkanol and the carboxylic acid ester are selected so as to form an azeotropic mixture and are present in an amount from 20% by weight below to 20% by weight above such azeotropic mixture.
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公开(公告)号：US20200255772A1
公开(公告)日：2020-08-13
申请号：US16756303
申请日：2018-10-29
Applicant: BASF SE
Inventor： Daniel LOEFFLER , Mei Chin SHEN , Sheng Hsuan WEI , Frank PIRRUNG , Lothar ENGELBRECHT , Yeni BURK , Andreas KLIPP , Marcel BRILL , Szilard CSIHONY
Abstract: The invention relates to the use of a non-aqueous composition comprising an organic solvent and at least one particular siloxane-type additive for treating substrates comprising patterns having line-space dimensions of 50 nm or below and aspect ratios of 4 or more as well as a method for manufacturing integrated circuit devices, optical devices, micromachines and mechanical precision devices, the said method comprising the steps of (1) providing a substrate having patterned material layers having line-space dimensions of 50 nm, aspect ratios of greater or equal 4, or a combination thereof, (2) contacting the substrate at least once with a non-aqueous composition, and (3) removing the non-aqueous composition from the contact with the substrate, wherein the non-aqueous composition comprising an organic solvent and at least one of such siloxane-type additives.
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