利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

10 条记录 (耗时 0.015 秒)

    PROCESS FOR THE GENERATION OF THIN INORGANIC FILMS
    1.
    发明申请
    PROCESS FOR THE GENERATION OF THIN INORGANIC FILMS 审中-公开

    公开(公告)号：US20190177844A1

    公开(公告)日：2019-06-13

    申请号：US16322999

    申请日：2017-08-23

    申请人： BASF SE

    发明人： Torben ADERMANN ,  Falko ABELS ,  Carolin LIMBURG ,  Hagen WILMER ,  Jan GERKENS ,  Sven SCHNEIDER

    IPC分类号： C23C16/455 ,  C23C16/18 ,  C07F15/06

    摘要： The present invention is in the field of processes for the generation of thin inorganic films on substrates, in particular atomic layer deposition processes. The present invention relates to a process for the generation of inorganic films comprising depositing the compound of general formula (I) onto a solid substrate (I), wherein M is Mn, Ni or Co, X is a ligand which coordinates M, n is 0, 1, 2, 3, or 4, R1 is an alkyl group, an alkenyl group, an aryl group, a halogen, or a silyl group, R2 is an alkyl group, an alkenyl group, an aryl group, or a silyl group, p and q are 1 or 2, wherein p+q=3, and m is 1, 2, or 3.

    PROCESS FOR THE GENERATION OF THIN INORGANIC FILMS
    2.
    发明申请
    PROCESS FOR THE GENERATION OF THIN INORGANIC FILMS 审中-公开

    公开(公告)号：US20190144999A1

    公开(公告)日：2019-05-16

    申请号：US16092577

    申请日：2017-04-10

    申请人： BASF SE

    发明人： Carolin LIMBURG ,  Daniel LOEFFLER ,  Hagen WILMER ,  Marc WALTER ,  Matthias REINERS

    IPC分类号： C23C16/455 ,  H01L21/285 ,  C07F15/06 ,  C07F15/04

    摘要： The present invention is in the field of processes for the generation of thin inorganic films on substrates. In particular, the present invention relates to a process comprising bringing a compound of general formula (I) into the gaseous or aerosol state Lm—M—Xn (I) and depositing the compound of general formula (I) from the gaseous or aerosol state onto a solid substrate, wherein R is independent of each other hydrogen, an alkyl group, an alkenyl group, an aryl group or a silyl group, p is 1, 2 or 3, M is Ni or Co, X is a σ-donating ligand which coordinates M, wherein if present at least one X is a ligand which coordinates M via a phosphor or nitrogen atom, m is 1 or 2 and n is 0 to 3.

    CATALYST AND METHOD FOR PRODUCING MALEIC ANHYDRIDE
    4.
    发明申请
    CATALYST AND METHOD FOR PRODUCING MALEIC ANHYDRIDE 有权
    催化剂及其生产方法

    公开(公告)号：US20150343433A1

    公开(公告)日：2015-12-03

    申请号：US14823292

    申请日：2015-08-11

    申请人： BASF SE

    发明人： Cornelia Katharina DOBNER ,  Stefan ALTWASSER ,  Hagen WILMER ,  Frank ROSOWSKI

    IPC分类号： B01J35/02 ,  B01J35/10

    CPC分类号： B01J35/023 ,  B01J27/198 ,  B01J35/002 ,  B01J35/02 ,  B01J35/026 ,  B01J35/1038 ,  B01J35/1042 ,  B01J37/0009 ,  B01J37/0018 ,  C07C51/215 ,  Y10T428/2975 ,  C07C57/145

    摘要： The invention relates to a catalyst molded body for preparing maleic anhydride by gas-phase oxidation of a hydrocarbon having at least four carbon atoms using a catalytically active composition containing vanadium, phosphorus and oxygen. The shaped catalyst body has an essentially cylindrical body having a longitudinal axis. The cylindrical body has at least two parallel internal holes which are essentially parallel to the cylinder axis of the body and go right through the body. The catalyst molded body has a large outer surface area, a lower pressure loss and sufficient mechanical stability.

    摘要翻译： 本发明涉及一种用于通过使用含有钒，磷和氧的催化活性组合物通过气相氧化具有至少四个碳原子的烃来制备马来酸酐的催化剂模制体。 成型的催化剂体具有基本上具有纵向轴线的圆柱体。 圆柱体具有至少两个平行的内孔，其基本上平行于主体的气缸轴线并且直接通过本体。 催化剂成型体具有大的外表面积，较低的压力损失和足够的机械稳定性。

    PROCESS FOR THE GENERATION OF THIN INORGANIC FILMS
    8.
    发明申请
    PROCESS FOR THE GENERATION OF THIN INORGANIC FILMS 审中-公开

    公开(公告)号：US20190003049A1

    公开(公告)日：2019-01-03

    申请号：US16063603

    申请日：2017-01-17

    申请人： BASF SE

    发明人： Falko ABELS ,  Daniel LOEFFLER ,  Hagen WILMER ,  Robert WOLF ,  Christian ROEDL ,  Philipp BUESCHELBERGER

    IPC分类号： C23C16/448 ,  C07F15/06

    摘要： The present invention is in the field of processes for the generation of thin inorganic films on substrates, in particular atomic layer deposition processes. In particular, the present invention relates to a process comprising bringing a compound of general formula (I) into the gaseous or aerosol state Ln . . . M . . . Xm (I) and depositing the compound of general formula (I) from the gaseous or aerosol state onto a solid substrate, wherein M is a metal, L is a ligand which coordinates to M and contains at least one phosphorus-carbon multiple bond, wherein L contains a phosphorus-containing heterocyclic ring or a phosphorus-carbon triple bond, X is a ligand which coordinates to M, n is 1 to 5, and m is 0 to 5.

    PROCESS FOR THE GENERATION OF THIN INORGANIC FILMS
    9.
    发明申请
    PROCESS FOR THE GENERATION OF THIN INORGANIC FILMS 审中-公开

    公开(公告)号：US20180320265A1

    公开(公告)日：2018-11-08

    申请号：US15775856

    申请日：2016-11-18

    申请人： BASF SE

    发明人： Torben ADERMANN ,  Daniel LOEFFLER ,  Carolin LIMBURG ,  Falko ABELS ,  Hagen WILMER ,  Monica GILL ,  Matthew GRIFFITHS ,  Sean BARRY

    IPC分类号： C23C16/18 ,  C23C16/455 ,  C07F15/06

    摘要： The present invention is in the field of processes for the generation of thin inorganic films on substrates, in particular atomic layer deposition processes. The present invention relates to a process comprising bringing a compound of general formula (I) into the gaseous or aerosol state and depositing the compound of general formula (I) from the gaseous or aerosol state onto a solid substrate, wherein R1, R2, R3, and R4 are independent of each other an alkyl group, an aryl group or a trialkylsilyl group, M is Mn, Ni or Co, X is a ligand which coordinates M, wherein at least one X is a neutrally charged ligand, m is 1, 2 or 3 and n is at least 1 wherein the molecular weight of the compound of general formula (I) is up to 1000 g/mol.