公开(公告)号：US20150332828A1

公开(公告)日：2015-11-19

申请号：US14812922

申请日：2015-07-29

Applicant: CKD CORPORATION

Inventor： Masayuki KOUKETSU ,  Akihiro ITO ,  Kazutoshi ITOH ,  Takashi HOSONO ,  Sadayoshi MUTO

IPC: H01F5/06 ,  H01F7/08 ,  F16K49/00 ,  F16K31/06 ,  H01F41/06 ,  H01F41/12

CPC classification number: H01F5/06 ,  F16K31/0675 ,  F16K49/00 ,  H01F5/00 ,  H01F7/08 ,  H01F27/08 ,  H01F41/064 ,  H01F41/125 ,  H01J35/14 ,  H01J2235/087 ,  H01J2235/1287 ,  Y10T29/49073 ,  Y10T137/6416

Abstract: An electromagnetic coil includes a conductor winding 12a formed by winding a conductor 12b a plurality of times about a predetermined axis, and a ceramic layer 12c formed through thermal spraying on an axial end surface of the conductor winding 12a, and having a flattened surface. A maximal value t12 of thickness of the ceramic layer 12c is set to three times or less a maximal value t11 of depth of the recesses formed at the surface of turns of the conductor 12b at the axial end surface.

Abstract translation: 电磁线圈包括通过围绕预定轴线多次缠绕导体12b而形成的导体绕组12a，以及通过热喷涂形成在导体绕组12a的轴向端面上并具有扁平表面的陶瓷层12c。 将陶瓷层12c的厚度的最大值t12设定为在轴向端面处形成在导体12b的匝面的凹部的深度的最大值t11的三倍以下。

公开(公告)号：US20180269090A1

公开(公告)日：2018-09-20

申请号：US15988128

申请日：2018-05-24

Applicant: Tokyo Electron Limited ,  CKD Corporation

Inventor： Atsushi KOBAYASHI ,  Atsuhiko TABUCHI ,  Hideki WAKAI ,  Kazutoshi ITOH ,  Yasuhisa HIROSE ,  Keiichi NISHIKAWA ,  Takahiro MINATANI

IPC: H01L21/67 ,  H01L21/66 ,  H01L21/683

CPC classification number: H01L21/67248 ,  H01L21/67109 ,  H01L21/6831 ,  H01L22/10

Abstract: A temperature control system includes a first temperature adjustment unit storing fluid at a first temperature; a second temperature adjustment unit storing fluid at a second temperature higher than the first temperature; a low-temperature flow path for passing fluid supplied from the first temperature adjustment unit; a high-temperature flow path for passing fluid supplied from the second temperature adjustment unit; a bypass flow path for circulating fluid; a combination flow path for passing fluid from the low-temperature flow path, the high-temperature flow path, and the bypass flow path merged at a merging part; a temperature adjustment part that passes fluid from the combination flow path and cools/heats a member of a semiconductor manufacturing device; and a control device that controls valve positions of variable valves attached to the three flow paths upstream of the merging part and adjusts the flow rate distribution ratio for the three flow paths.