公开(公告)号：US20230268111A1

公开(公告)日：2023-08-24

申请号：US18308399

申请日：2023-04-27

Applicant: CSMC TECHNOLOGIES FAB2 CO., LTD.

Inventor： Congying DONG

IPC: H01F17/00 ,  H01L23/522

CPC classification number: H01F17/0013 ,  H01L23/5227 ,  H01F2017/0086

Abstract: A stacked spiral inductor, comprising: a substrate, and multiple stacked insulating layers and inductive metal layers formed on the substrate by means of a semiconductor process. Each inductive metal layer comprises a conductive coil in a shape of a spiral and a through hole area used for connecting two adjacent inductive metal layers. The conductive coils of the inductive metal layers have a common coil center. In two adjacent inductive metal layers, the conductive coil of the lower inductive metal layer is retracted toward the coil center with respect to the conductive coil of the upper inductive metal layer.

公开(公告)号：US20200005980A1

公开(公告)日：2020-01-02

申请号：US16481600

申请日：2018-07-03

Applicant: CSMC TECHNOLOGIES FAB2 CO., LTD.

Inventor： Congying DONG

IPC: H01F17/00 ,  H01L23/522

Abstract: A stacked spiral inductor, comprising: a substrate, and multiple stacked insulating layers and inductive metal layers formed on the substrate by means of a semiconductor process. Each inductive metal layer comprises a conductive coil in a shape of a spiral and a through hole area used for connecting two adjacent inductive metal layers. The conductive coils of the inductive metal layers have a common coil center. In two adjacent inductive metal layers, the conductive coil of the lower inductive metal layer is retracted toward the coil center with respect to the conductive coil of the upper inductive metal layer.