公开(公告)号：US20240234520A9

公开(公告)日：2024-07-11

申请号：US18277658

申请日：2021-07-28

Applicant: CSMC TECHNOLOGIES FAB2 CO., LTD.

Inventor： CHUNXU LI ,  FENG LIN ,  SHUXIAN CHEN ,  HONGFENG JIN ,  HUAJUN JIN ,  GANG HUANG ,  YU HUANG ,  BIN YANG

IPC: H01L29/40 ,  H01L29/06 ,  H01L29/66 ,  H01L29/78

CPC classification number: H01L29/402 ,  H01L29/0653 ,  H01L29/401 ,  H01L29/66681 ,  H01L29/7816

Abstract: A laterally diffused metal oxide semiconductor device and a preparation method thereof are disclosed. The semiconductor device includes: a substrate; a body region having a first conductivity type and formed in the substrate; a drift region, having a second conductivity type, formed in the substrate and adjacent to the body region; a field plate structure, formed on the drift region, a lower surface of an end of the field plate structure close to the body region being flush with the upper surface of the substrate, and the end of the field plate structure close to the body region also having an upwardly extending inclined surface; and a drain region, having a second conductivity type, formed in an upper layer of the drift region, and in contact with the end of the field plate structure away from the body region.

公开(公告)号：US20240136413A1

公开(公告)日：2024-04-25

申请号：US18277658

申请日：2021-07-27

Applicant: CSMC TECHNOLOGIES FAB2 CO., LTD.

Inventor： CHUNXU LI ,  FENG LIN ,  SHUXIAN CHEN ,  HONGFENG JIN ,  HUAJUN JIN ,  GANG HUANG ,  YU HUANG ,  BIN YANG

IPC: H01L29/40 ,  H01L29/06 ,  H01L29/66 ,  H01L29/78

CPC classification number: H01L29/402 ,  H01L29/0653 ,  H01L29/401 ,  H01L29/66681 ,  H01L29/7816

Abstract: A laterally diffused metal oxide semiconductor device and a preparation method thereof are disclosed. The semiconductor device includes: a substrate; a body region having a first conductivity type and formed in the substrate; a drift region, having a second conductivity type, formed in the substrate and adjacent to the body region; a field plate structure, formed on the drift region, a lower surface of an end of the field plate structure close to the body region being flush with the upper surface of the substrate, and the end of the field plate structure close to the body region also having an upwardly extending inclined surface; and a drain region, having a second conductivity type, formed in an upper layer of the drift region, and in contact with the end of the field plate structure away from the body region.