公开(公告)号：US20240290846A1

公开(公告)日：2024-08-29

申请号：US18572595

申请日：2022-04-28

Applicant: CSMC TECHNOLOGIES FAB2 CO., LTD.

Inventor： Qun LIU ,  Song ZHANG ,  Yaohui ZHOU ,  Dejin WANG ,  Wenming ZHU

IPC: H01L29/40 ,  H01L29/45

CPC classification number: H01L29/401 ,  H01L29/456

Abstract: A forming method for a floating contact hole, and a semiconductor device. The method comprises: obtaining a substrate, and forming a tunnel oxide layer and a plurality of gates on the substrate; forming a metal silicide barrier layer; forming a self-aligned metal silicide; forming an interlayer dielectric layer; performing photoetching on the interlayer dielectric layer to obtain a photoresist pattern, the photoresist pattern comprising a small adhesive strip in the middle of the floating contact hole; and etching the floating contact hole by using the photoresist pattern as an etching mask layer.