公开(公告)号：US20210126001A1

公开(公告)日：2021-04-29

申请号：US17257087

申请日：2019-10-12

Applicant: CSMC TECHNOLOGIES FAB2 CO., LTD.

Inventor： Song ZHANG ,  Zhibin LIANG ,  Yan JIN ,  Dejin WANG

IPC: H01L27/11521

Abstract: A flash device and a manufacturing method thereof. The method comprises: providing a substrate, and forming, on the substrate, a floating gate polycrystalline layer, a floating gate oxide layer, and a tunneling oxide layer; wherein the floating gate polycrystalline layer is formed on the substrate, the floating gate oxide layer is formed between the substrate and the floating gate polycrystalline layer, a substrate region at one side of the floating gate polycrystalline layer is a first substrate region, a substrate region at the other side of the floating gate polycrystalline layer is a second substrate region; forming, on the tunneling oxide layer, located in the first substrate region, a continuous non-conductive layer, the non-conductive layer extending to the tunneling oxide layer at a side wall of the floating gate polycrystalline layer; and forming, on the tunneling oxide layer, a polysilicon layer.

公开(公告)号：US20240290846A1

公开(公告)日：2024-08-29

申请号：US18572595

申请日：2022-04-28

Applicant: CSMC TECHNOLOGIES FAB2 CO., LTD.

Inventor： Qun LIU ,  Song ZHANG ,  Yaohui ZHOU ,  Dejin WANG ,  Wenming ZHU

IPC: H01L29/40 ,  H01L29/45

CPC classification number: H01L29/401 ,  H01L29/456

Abstract: A forming method for a floating contact hole, and a semiconductor device. The method comprises: obtaining a substrate, and forming a tunnel oxide layer and a plurality of gates on the substrate; forming a metal silicide barrier layer; forming a self-aligned metal silicide; forming an interlayer dielectric layer; performing photoetching on the interlayer dielectric layer to obtain a photoresist pattern, the photoresist pattern comprising a small adhesive strip in the middle of the floating contact hole; and etching the floating contact hole by using the photoresist pattern as an etching mask layer.