公开(公告)号：US20180201395A1

公开(公告)日：2018-07-19

申请号：US14800436

申请日：2015-07-15

Applicant: California Institute of Technology

Inventor： Cecile Jung-Kubiak ,  Colleen M. Marrese-Reading ,  Victor E. White ,  Daniel W. Wilson ,  Matthew R. Dickie ,  Karl Y. Yee ,  Richard E. Muller ,  James E. Polk ,  John R. Anderson ,  Nima Rouhi ,  Frank Greer

IPC: B64G1/40

CPC classification number: B64G1/405

Abstract: Micro-emitter arrays and methods of microfabricating such emitter arrays are provided. The microfabricated emitter arrays incorporate a plurality of emitters with heights greater than 280 microns with uniformity of +/−10 microns arranged on a supporting silicon substrate, each emitter comprising an elongated body extending from the top surface of the substrate and incorporating at least one emitter tip on the distal end of the elongated body thereof. The emitters may be disposed on the substrate in an ordered array in an X by Y grid pattern, wherein X and Y can be any number greater than zero. The micro-emitter arrays may utilize a LMIS propellant source including, for example, gallium, indium, bismuth, or tin. The substrate may incorporate at least one through-via providing a fluid pathway for the LMIS propellant to flow from a propellant reservoir beneath the substrate to the top substrate surface whereupon the micro-emitter array is disposed.

公开(公告)号：US10384810B2

公开(公告)日：2019-08-20

申请号：US14800436

申请日：2015-07-15

Applicant: California Institute of Technology

Inventor： Cecile Jung-Kubiak ,  Colleen M. Marrese-Reading ,  Victor E. White ,  Daniel W. Wilson ,  Matthew R. Dickie ,  Karl Y. Yee ,  Richard E. Muller ,  James E. Polk ,  John R. Anderson ,  Nima Rouhi ,  Frank Greer

IPC: B64G1/40

Abstract: Micro-emitter arrays and methods of microfabricating such emitter arrays are provided. The microfabricated emitter arrays incorporate a plurality of emitters with heights greater than 280 microns with uniformity of +/−10 microns arranged on a supporting silicon substrate, each emitter comprising an elongated body extending from the top surface of the substrate and incorporating at least one emitter tip on the distal end of the elongated body thereof. The emitters may be disposed on the substrate in an ordered array in an X by Y grid pattern, wherein X and Y can be any number greater than zero. The micro-emitter arrays may utilize a LMIS propellant source including, for example, gallium, indium, bismuth, or tin. The substrate may incorporate at least one through-via providing a fluid pathway for the LMIS propellant to flow from a propellant reservoir beneath the substrate to the top substrate surface whereupon the micro-emitter array is disposed.

公开(公告)号：US20210131460A1

公开(公告)日：2021-05-06

申请号：US17089629

申请日：2020-11-04

Applicant: California Institute of Technology

Inventor： Punnathat Bordeenithikasem ,  Victor E. White ,  Kalind C. Carpenter ,  Douglas C. Hofmann

IPC: F16B2/00 ,  C22C45/10 ,  C22C45/00 ,  B22D21/00

Abstract: Bulk metallic glass-based gripping arrays of nano- or micro-scale grippers are described, along with the methods of fabrication and use thereof. BMG-based gripping arrays can be fabricated via facile and scalable thermoplastic forming/molding methods typically available to polymeric materials, yet they possess many of the favorable properties of metallic alloys that polymers lack, such as, for example, excellent mechanical properties and robustness towards wear and adverse surrounding conditions.

公开(公告)号：US20130301113A1

公开(公告)日：2013-11-14

申请号：US13865179

申请日：2013-04-17

Applicant: California Institute of Technology

Inventor： Sergio Pellegrino ,  Keith D. Patterson ,  Chiara Daraio ,  Eleftherios Gdoutos ,  Namiko Yamamoto ,  Risaku Toda ,  Victor E. White ,  Harish Manohara ,  John B. Steeves

IPC: G02B26/08

CPC classification number: G02B26/08 ,  B22D25/06 ,  B32B7/02 ,  B32B15/043 ,  B81B3/0072 ,  C04B35/62218 ,  G02B26/0825 ,  Y10T428/1234 ,  Y10T428/24149

Abstract: A deformable mirror is configured to be deformed by surface-parallel actuation. In one embodiment, the deformable mirror includes a first piezoelectric active layer on a first surface of a substrate. The first piezoelectric active layer has a substantially uniform thickness across the first surface of the substrate. The mirror also includes a first electrode layer on the first piezoelectric active layer. The first electrode layer has a plurality of electrodes arranged in a first pattern and has a substantially uniform thickness across the first piezoelectric active layer. The mirror may further include a second piezoelectric layer on the first electrode layer, and a second electrode layer on the second piezoelectric layer. The electrodes of the first and second electrode layers are configured to supply a voltage to the piezoelectric active layers upon actuation to thereby locally deform the shape of the mirror to correct for optical aberrations.

Abstract translation: 可变形反射镜被构造成通过表面平行致动而变形。 在一个实施例中，可变形反射镜包括在基板的第一表面上的第一压电有源层。 第一压电有源层在衬底的第一表面上具有基本均匀的厚度。 反射镜还包括在第一压电有源层上的第一电极层。 第一电极层具有布置成第一图案的多个电极，并且跨越第一压电有源层具有基本均匀的厚度。 反射镜还可以包括第一电极层上的第二压电层和第二压电层上的第二电极层。 第一和第二电极层的电极构造成在致动时向压电有源层提供电压，从而局部地使反射镜的形状变形以校正光学像差。

公开(公告)号：US20130302633A1

公开(公告)日：2013-11-14

申请号：US13865170

申请日：2013-04-17

Applicant: California Institute of Technology

Inventor： Sergio Pellegrino ,  Keith D. Patterson ,  Chiara Daraio ,  Eleftherios Gdoutos ,  Namiko Yamamoto ,  Risaku Toda ,  Victor E. White ,  Harish Manohara ,  John B. Steeves

IPC: B32B7/02 ,  C04B35/622 ,  B22D25/06 ,  B32B15/04

CPC classification number: G02B26/08 ,  B22D25/06 ,  B32B7/02 ,  B32B15/043 ,  B81B3/0072 ,  C04B35/62218 ,  G02B26/0825 ,  Y10T428/1234 ,  Y10T428/24149

Abstract: A micro-scaled bi-material lattice structure includes a frame comprising a first material having a first coefficient of expansion and defining a plurality of unit cells. The bi-material lattice structure further includes a plurality of plates comprising a second material having a second coefficient of expansion different from the first coefficient of expansion. One of the plates is connected to each unit cell. The bi-material lattice structure has a third coefficient of expansion different from both the first coefficient of the expansion and the second coefficient of expansion, and the bi-material lattice structure has a thickness of about 100 nm to about 3000 microns.

Abstract translation: 微尺度双材料晶格结构包括框架，该框架包括具有第一膨胀系数并限定多个单元电池的第一材料。 双材料晶格结构还包括多个板，其包括具有与第一膨胀系数不同的第二膨胀系数的第二材料。 其中一个板连接到每个单元电池。 双材料晶格结构具有与膨胀的第一系数和第二膨胀系数不同的第三膨胀系数，并且双材料晶格结构具有约100nm至约3000微米的厚度。