公开(公告)号：US20160197084A1

公开(公告)日：2016-07-07

申请号：US14981975

申请日：2015-12-29

申请人： Chan-Sic YOON ,  Ho-In RYU ,  Ki-Seok LEE ,  Chang-Hyun CHO

发明人： Chan-Sic YOON ,  Ho-In RYU ,  Ki-Seok LEE ,  Chang-Hyun CHO

IPC分类号： H01L27/108 ,  H01L21/761 ,  H01L21/311 ,  H01L29/423

CPC分类号： H01L27/10876 ,  H01L21/31111 ,  H01L21/761 ,  H01L27/10814 ,  H01L27/10855 ,  H01L27/10891 ,  H01L29/4236

摘要： A semiconductor device includes a substrate having an active region defined by a device isolation layer and at least a gate trench linearly extending in a first direction to cross the active region, the active region having a gate area at a bottom of the gate trench and a junction area at a surface of the substrate. The device further may include a first conductive line filling the gate trench and extending in the first direction, the first conductive line having a buried gate structure on the gate area of the active region. The device also may include a junction including implanted dopants at the junction area of the active region, and a junction separator on the device isolation layer and defining the junction. The junction separator may be formed of an insulative material and have an etch resistance greater than that of the device isolation layer.

摘要翻译： 半导体器件包括具有由器件隔离层限定的有源区和至少在第一方向上线性延伸以交叉有源区的栅极沟槽的衬底，有源区具有在栅极沟槽的底部的栅极区和 在基底表面的接合面积。 器件还可以包括填充栅极沟槽并沿第一方向延伸的第一导电线，第一导线在有源区的栅极区上具有掩埋栅极结构。 该器件还可以包括在有源区域的接合区域处包括注入的掺杂剂的接合部以及器件隔离层上的接合分离器并限定接合部。 接合分离器可以由绝缘材料形成，并且具有大于器件隔离层的耐蚀刻性。