公开(公告)号：US20240079292A1

公开(公告)日：2024-03-07

申请号：US18504296

申请日：2023-11-08

Applicant: DENSO CORPORATION

Inventor： Shingo TSUCHIMOCHI ,  Hirotoshi KUSAMA ,  Takanori KAWASHIMA

IPC: H01L23/373 ,  H01L23/00 ,  H01L23/31 ,  H01L25/07

CPC classification number: H01L23/3735 ,  H01L23/3142 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L25/072 ,  H02P27/06

Abstract: A semiconductor device includes: a semiconductor element having main electrodes on opposite faces in a plate thickness direction; a substrate having an insulating base member, a front-face metal body disposed on a front face of the insulating base member and electrically connected to one of the main electrodes of the semiconductor element, and a back-face metal body disposed on a back face of the insulating base member; a bonding member; and a metal member connected to the front-face metal body through the bonding member. The metal member has an opposing face opposing an upper face of the front-face metal body and a receiving portion disposed adjacent to the opposing face to provide a receiving space to receive the bonding member therein. The bonding member is received in the receiving space in a state where the opposing face is in contact with the upper face of the front-face metal body.