公开(公告)号：US20240421132A1

公开(公告)日：2024-12-19

申请号：US18817993

申请日：2024-08-28

Applicant: DENSO CORPORATION

Inventor： Shingo TSUCHIMOCHI ,  Takanori KAWASHIMA

IPC: H01L25/07 ,  H01L23/00 ,  H01L23/31 ,  H01L23/495

Abstract: A semiconductor device includes a semiconductor element, a substrate, a bonding material, a main terminal and a plating film. The substrate has an insulating base member, a front surface metal body on a front surface of the insulating base member and electrically connected to a main electrode of the semiconductor element, and a back surface metal body on a back surface of the insulating base member. The bonding material is interposed between the main electrode and the front surface metal body. The main terminal has a solid-state bonded portion bonded to the front surface metal body. The plating film is disposed on the front surface metal body and the main terminal to cover the solid-state bonded portion. The main terminal includes a wide terminal having one solid-state bonded portion and having an overlapping region a width of which is greater than the solid-state bonded portion.

公开(公告)号：US20240079292A1

公开(公告)日：2024-03-07

申请号：US18504296

申请日：2023-11-08

Applicant: DENSO CORPORATION

Inventor： Shingo TSUCHIMOCHI ,  Hirotoshi KUSAMA ,  Takanori KAWASHIMA

IPC: H01L23/373 ,  H01L23/00 ,  H01L23/31 ,  H01L25/07

CPC classification number: H01L23/3735 ,  H01L23/3142 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L25/072 ,  H02P27/06

Abstract: A semiconductor device includes: a semiconductor element having main electrodes on opposite faces in a plate thickness direction; a substrate having an insulating base member, a front-face metal body disposed on a front face of the insulating base member and electrically connected to one of the main electrodes of the semiconductor element, and a back-face metal body disposed on a back face of the insulating base member; a bonding member; and a metal member connected to the front-face metal body through the bonding member. The metal member has an opposing face opposing an upper face of the front-face metal body and a receiving portion disposed adjacent to the opposing face to provide a receiving space to receive the bonding member therein. The bonding member is received in the receiving space in a state where the opposing face is in contact with the upper face of the front-face metal body.

公开(公告)号：US20250069967A1

公开(公告)日：2025-02-27

申请号：US18928536

申请日：2024-10-28

Applicant: DENSO CORPORATION

Inventor： Akinori SAKAKIBARA ,  Takanori KAWASHIMA ,  Shingo TSUCHIMOCHI ,  Shoichiro OMAE

IPC: H01L23/13 ,  H01L23/31 ,  H01L23/498 ,  H01L25/065 ,  H01L25/07

Abstract: A semiconductor device includes a first insulating circuit board, a semiconductor element on the first insulating circuit board, and an encapsulating body. The first insulating circuit board includes a first insulating substrate, and a first inner conductor layer, and a first outer conductor layer. The first inner conductor layer is electrically connected to a first electrode of the semiconductor element inside of the encapsulating body. The first outer conductor layer is exposed from a surface of the encapsulating body. The first inner conductor layer has a first thin-wall portion a thickness of which reduces toward an outer side, along an outer peripheral edge of the first inner conductor layer with a first width. The first outer conductor layer (i) does not have or (ii) has a second thin-wall portion along the outer peripheral edge of the first outer conductor layer with a second width.

公开(公告)号：US20220278006A1

公开(公告)日：2022-09-01

申请号：US17746492

申请日：2022-05-17

Applicant: DENSO CORPORATION

Inventor： Akinori SAKAKIBARA ,  Takanori KAWASHIMA ,  Shingo TSUCHIMOCHI ,  Shoichiro OMAE

IPC: H01L23/13 ,  H01L23/498 ,  H01L23/31

Abstract: A semiconductor device includes a first insulating circuit board, a semiconductor element on the first insulating circuit board, and an encapsulating body. The first insulating circuit board includes a first insulating substrate, and a first inner conductor layer, and a first outer conductor layer. The first inner conductor layer is electrically connected to a first electrode of the semiconductor element inside of the encapsulating body. The first outer conductor layer is exposed from a surface of the encapsulating body. The first inner conductor layer has a first thin-wall portion a thickness of which reduces toward an outer side, along an outer peripheral edge of the first inner conductor layer with a first width. The first outer conductor layer (i) does not have or (ii) has a second thin-wall portion along the outer peripheral edge of the first outer conductor layer with a second width.