SEMICONDUCTOR DEVICE
    1.
    发明申请

    公开(公告)号:US20210367048A1

    公开(公告)日:2021-11-25

    申请号:US17394278

    申请日:2021-08-04

    Abstract: A semiconductor device includes a semiconductor chip, first and second conductive members disposed on opposite sides of the semiconductor chip. The semiconductor chip includes a semiconductor substrate, a surface electrode and gate wirings. The semiconductor substrate has active regions formed with elements, and an inactive region not formed with an element. The inactive region includes an inter-inactive portion disposed between at least two active regions and an outer peripheral inactive portion disposed on an outer periphery of the at least two active regions. The surface electrode is disposed to continuously extend above the at least two active regions and the inter-inactive portion. The gate wirings are disposed above the inactive region, and include a first gate wiring disposed on an outer periphery of the surface electrode, and a second gate electrode disposed at a position facing the surface electrode.

    SEMICONDUCTOR DEVICE
    2.
    发明申请

    公开(公告)号:US20210098442A1

    公开(公告)日:2021-04-01

    申请号:US17034678

    申请日:2020-09-28

    Abstract: A semiconductor device includes, a semiconductor element, a wiring member arranged to sandwich the semiconductor element, a sealing resin body. The semiconductor element has an SBD formed thereon with a base material of SiC which is a wide band gap semiconductor. The semiconductor element has two main electrodes on both surfaces. The wiring member includes (i) a heat sink electrically connected to a first main electrode and (ii) a heat sink and a terminal electrically connected to a second main electrode. The semiconductor device further includes an insulator. The insulator has a non-conducting element made of silicon. The insulator has joints on both of two surfaces for mechanical connection of the heat sinks.

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