公开(公告)号：US20210098442A1

公开(公告)日：2021-04-01

申请号：US17034678

申请日：2020-09-28

Applicant: DENSO CORPORATION

Inventor： Satoru SUGITA ,  Kosuke YUZAWA ,  Susumu YAMADA ,  Kenji KOMIYA

IPC: H01L25/18 ,  H01L23/495 ,  H01L23/00 ,  H02M3/158

Abstract: A semiconductor device includes, a semiconductor element, a wiring member arranged to sandwich the semiconductor element, a sealing resin body. The semiconductor element has an SBD formed thereon with a base material of SiC which is a wide band gap semiconductor. The semiconductor element has two main electrodes on both surfaces. The wiring member includes (i) a heat sink electrically connected to a first main electrode and (ii) a heat sink and a terminal electrically connected to a second main electrode. The semiconductor device further includes an insulator. The insulator has a non-conducting element made of silicon. The insulator has joints on both of two surfaces for mechanical connection of the heat sinks.