公开(公告)号：US20190137547A1

公开(公告)日：2019-05-09

申请号：US16180164

申请日：2018-11-05

Applicant: DENSO CORPORATION

Inventor： Tomoyuki MURAHO ,  Yohei KONDO

IPC: G01R19/165 ,  H03K17/082 ,  H02H3/087 ,  H03K17/06

Abstract: In an overcurrent determining apparatus, a temperature obtainer obtains a temperature parameter indicative of a temperature of a switching element as a temperature measurement value. A determination voltage has a first voltage value when the temperature measurement value is a first temperature. A setter sets the determination voltage to a second voltage value upon determining that the temperature measurement value is a second temperature higher than the first temperature. The second voltage value is lower than the first voltage value and higher than a value of a Miller voltage of the switching element at the second temperature.

公开(公告)号：US20170302152A1

公开(公告)日：2017-10-19

申请号：US15490390

申请日：2017-04-18

Applicant: DENSO CORPORATION

Inventor： Kazunori WATANABE ,  Tomotaka SUZUKI ,  Tomoyuki MURAHO ,  Yoshinori HAYASHI

IPC: H02M1/088 ,  H03K17/04 ,  H02M7/5387 ,  H02P27/08 ,  H02M1/00

CPC classification number: H02M1/088 ,  H02M7/53871 ,  H02M7/53875 ,  H02M2001/0054 ,  H02P27/08 ,  H03K17/0406 ,  H03K17/04123 ,  H03K17/127 ,  H03K17/6871 ,  Y02B70/1491

Abstract: In a drive circuit, a rate adjuster adjusts a charging speed of a MOSFET to be faster than the charging speed of an IGBT when a drive state changer changes the first switching element from the off state to the on state first, and changes the second switching element from the off state to the on state next. The rate adjuster also adjusts a discharging speed of the MOSFET to be faster than the discharging speed of the IGBT when the drive state changer changes the MOSFET from the on state to the off state first, and changes the IGBT from the on state to the off state next.