公开(公告)号：US5394006A

公开(公告)日：1995-02-28

申请号：US177521

申请日：1994-01-04

Applicant: David N.-C. Liu

Inventor： David N.-C. Liu

IPC: H01J3/02 ,  H01J9/02 ,  B44C1/22 ,  C23F1/02 ,  H01L31/00

CPC classification number: H01J3/022 ,  H01J9/025

Abstract: A method of forming a self-aligned gated field emitter with reduced gate opening and uniform gate height, on a substrate, is described. A field emitter is formed on the substrate. A thin, conformal dielectric layer is formed over the field emitter and the substrate. A thick dielectric layer is formed over the thin, conformal dielectric layer. The thick dielectric layer is planarized. The thick dielectric layer is etched back. A conductive layer is formed over the thick dielectric layer. The conductive layer is planarized and then etched back. The field emitter is exposed by forming an opening in the conductive layer, by removing the portion of the thin, conformal dielectric layer above and around the top of the field emitter.

Abstract translation: 描述了在衬底上形成具有减小的栅极开口和均匀栅极高度的自对准栅控场致发射体的方法。 在基板上形成场致发射体。 在场致发射体和衬底上形成薄的保形介电层。 在薄的共形介电层上形成厚的介电层。 厚电介质层被平坦化。 厚电介质层被回蚀。 导电层形成在厚电介质层上。 导电层被平坦化，然后被回蚀。 通过在场致发射体的顶部和周围去除薄的共形绝缘层的部分，在导电层中形成开口来暴露场发射体。