公开(公告)号：US11967479B2

公开(公告)日：2024-04-23

申请号：US18247260

申请日：2021-09-29

申请人： NCX Corporation

发明人： Jian Zhang

IPC分类号： H01J1/304 ,  H01J9/02

CPC分类号： H01J1/304 ,  H01J9/025

摘要： A field emission cathode device and method for forming a field emission cathode device involve a cathode element having a field emission surface disposed in spaced-apart relation to a gate electrode element so as to define a gap between the field emission surface and the gate electrode element. The gate electrode element extends laterally between opposing anchored ends. The gate electrode element is arranged to deform away from the field emission surface in response to heat, so as to increase the gap between the field emission surface and the gate electrode element.

公开(公告)号：US20240047415A1

公开(公告)日：2024-02-08

申请号：US18282005

申请日：2022-03-14

申请人： NANO-X IMAGING LTD

发明人： Ukyo JEONG ,  Ghiyuun KANG

IPC分类号： H01L23/00 ,  H01J35/06 ,  H01J9/02

CPC分类号： H01L24/83 ,  H01L24/05 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L24/92 ,  H01L24/45 ,  H01J35/065 ,  H01J9/025 ,  H01L2224/05155 ,  H01L2224/05073 ,  H01L2224/05644 ,  H01L2224/05573 ,  H01L24/06 ,  H01L2224/0603 ,  H01L2224/06181 ,  H01L2224/27442 ,  H01L2224/29139 ,  H01L2224/32227 ,  H01L2224/83191 ,  H01L2224/83192 ,  H01L2224/83201 ,  H01L2224/83444 ,  H01L2224/8384 ,  H01L2224/48227 ,  H01L2224/48091 ,  H01L2224/48464 ,  H01L2224/73265 ,  H01L2224/92247 ,  H01L2224/45144

摘要： A method for fabricating silicon die stacks for electron emitter chips by applying sintering to bind a silicon substrate die to other die layers. Metal powder is applied to the bonding surface of the die, covered with the chip carrier or chip and compressed between two heated plates. The bonding pads of the die may be conductively coupled to corresponding bonding pads of the other die layers.

公开(公告)号：US11875964B2

公开(公告)日：2024-01-16

申请号：US17366552

申请日：2021-07-02

申请人： Physical Sciences, Inc.

发明人： Jonathan D. Rameau ,  Nicholas R. Craig

IPC分类号： H01J1/304 ,  H01J3/02 ,  H01J9/02 ,  B64G1/22 ,  C09D5/24 ,  C09D163/00

CPC分类号： H01J1/3044 ,  B64G1/226 ,  C09D5/24 ,  C09D163/00 ,  H01J3/022 ,  H01J9/025 ,  H01J2201/30411 ,  H01J2201/30457 ,  Y10S427/103

摘要： A triple-point cathode coating and method wherein electrically conductive NEA diamond particles cast or mixed with the adhesive medium and electrically insulative NEA diamond particles are cast or mixed with the adhesive medium to form a plurality of exposed junctions between electrically conductive diamond particles and electrically insulative diamond particles to reduce any electrical charges on a structure coated with the coating.

公开(公告)号：US20180211806A1

公开(公告)日：2018-07-26

申请号：US15697272

申请日：2017-09-06

申请人： ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

发明人： Jin-Woo JEONG ,  Yoon-Ho SONG

IPC分类号： H01J1/304 ,  H01J9/02

CPC分类号： H01J1/304 ,  H01J9/025 ,  H01J19/24

摘要： Provided is an electron emission source including a substrate, a fixed structure provided on the substrate, and an electron emission yarn provided between the substrate and the fixed structure. The fixed structure includes a first portion having a first width and a second portion having a second width greater than the first width, and the electron emission yarn extends on a first sidewall of the first portion of the fixed structure from between the fixed structure and the substrate.

公开(公告)号：US09966216B2

公开(公告)日：2018-05-08

申请号：US14356361

申请日：2012-11-05

申请人： Princeton University

发明人： Stephen Y. Chou

IPC分类号： H01J1/304 ,  H01J9/02 ,  H01L33/38 ,  H01L51/44 ,  H01L51/52 ,  H01L51/00 ,  H01L51/42

CPC分类号： H01J1/3042 ,  H01J9/025 ,  H01L33/38 ,  H01L51/0036 ,  H01L51/4253 ,  H01L51/442 ,  H01L51/5209 ,  H01L2933/0016 ,  H01L2933/0083 ,  Y02E10/549 ,  Y02P70/521

摘要： A new ultra-thin high-efficiency photoelectron source utilizing a metallic photonic resonant cavity having a photonic resonant cavity with a top metallic layer with a plurality of openings, each having an average dimension less than the wavelength of the excitation photons in vacuum, a bottom metallic layer and a photoelectron emission layer of semiconductor positioned between the top metallic layer and the bottom metallic.

公开(公告)号：US09960003B2

公开(公告)日：2018-05-01

申请号：US15544854

申请日：2016-01-18

申请人： SIEMENS AKTIENGESELLSCHAFT

发明人： Andreas Geisler ,  Svetlana Goβmann ,  Oliver Heid

IPC分类号： H01J1/304 ,  H01J35/06 ,  H01J35/10 ,  H01J9/02 ,  H01J35/14 ,  H01J31/08 ,  H01J3/02

CPC分类号： H01J1/304 ,  H01J3/021 ,  H01J9/025 ,  H01J31/08 ,  H01J35/065 ,  H01J35/10 ,  H01J35/14

摘要： An apparatus is provided for generating X-ray radiation in an outer magnetic field, which may be generated by a magnetic field device. The apparatus includes a cathode configured to generate an electron beam and an anode configured to retard the electrons of the electron beam and generate an X-ray beam. The apparatus further includes a device configured to generate an electric field orientated from the anode in the direction of the cathode and substantially collinear to the outer magnetic field, wherein the cathode, as an electron emitter, includes a cold cathode that passively provides free electrons by field emission.

公开(公告)号：US09837237B2

公开(公告)日：2017-12-05

申请号：US15608761

申请日：2017-05-30

申请人： Massachusetts Institute of Technology

发明人： Paulo C. Lozano ,  Carla Perez Martinez ,  Corey P. Fucetola ,  Jimmy Andrey Rojas Herrera

IPC分类号： H01J1/304 ,  H01J3/04 ,  H01J9/02

CPC分类号： H01J1/304 ,  H01J3/04 ,  H01J9/025

摘要： Embodiments related to the use and production of porous carbon materials in ion emitters and other applications are described.

公开(公告)号：US09805900B1

公开(公告)日：2017-10-31

申请号：US15145955

申请日：2016-05-04

申请人： Lockheed Martin Corporation

发明人： David Glen Findley

IPC分类号： H01J1/316 ,  H01J1/304 ,  H01J9/02 ,  B05D1/00

CPC分类号： H01J1/3042 ,  B05D1/005 ,  B05D2203/30 ,  H01J1/3046 ,  H01J1/3048 ,  H01J1/48 ,  H01J9/025 ,  H01J21/105 ,  H01J2201/30469

摘要： In an embodiment, a method includes forming a first diamond layer on a substrate and inducing a layer of graphene from the first diamond layer by heating the substrate and the first diamond layer. The method includes forming a second diamond layer on top of the layer of graphene and applying a mask to the second diamond layer. The mask includes a shape of a cathode, an anode, and one or more grids. The method further includes forming a two-dimensional cold cathode, a two-dimensional anode, and one or more two-dimensional grids by reactive-ion electron-beam etching. Each of the two-dimensional cold cathode, the two-dimensional anode, and the one or more two-dimensional grids includes a portion of the first diamond layer, the graphene layer, and the second diamond layer such that the graphene layer is positioned between the first diamond layer and the second diamond layer.

公开(公告)号：US09793083B2

公开(公告)日：2017-10-17

申请号：US15396701

申请日：2017-01-02

申请人： Elwha LLC

发明人： Roderick A. Hyde ,  Jordin T. Kare ,  Tony S. Pan ,  Lowell L. Wood, Jr.

IPC分类号： H01L29/06 ,  H01J19/24 ,  H01J9/02 ,  H01J9/18

CPC分类号： H01J19/24 ,  H01J1/304 ,  H01J1/3046 ,  H01J1/308 ,  H01J9/025 ,  H01J9/18 ,  H01J2209/0223

摘要： A horizontal multilayer junction-edge field emitter includes a plurality of vertically-stacked multilayer structures separated by isolation layers. Each multilayer structure is configured to produce a 2-dimensional electron gas at a junction between two layers within the structure. The emitter also includes an exposed surface intersecting the 2-dimensional electron gas of each of the plurality of vertically-stacked multilayer structures to form a plurality of effectively one-dimensional horizontal line sources of electron emission.

公开(公告)号：US09771266B2

公开(公告)日：2017-09-26

申请号：US14745665

申请日：2015-06-22

申请人： TOKYO ELECTRON LIMITED

发明人： Takashi Matsumoto ,  Osayuki Akiyama

IPC分类号： B44C1/22 ,  C03C15/00 ,  C03C25/68 ,  C23F1/00 ,  C01B31/02 ,  B82Y40/00 ,  H01J9/02 ,  C01B31/08 ,  B82Y30/00

CPC分类号： C01B32/168 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/16 ,  C01B32/176 ,  H01J9/025

摘要： A method for processing carbon nanotubes includes positioning in a treatment chamber of a carbon nanotube processing apparatus a substrate having multiple carbon nanotubes bundled together and oriented substantially perpendicular to a surface of the substrate, and introducing a microwave into the treatment chamber from a planar antenna having multiple microwave radiation holes such that plasma of an etching gas is generated and that the plasma etches the carbon nanotubes starting from one end of the carbon nanotubes bundled together.