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公开(公告)号:US20190252618A1
公开(公告)日:2019-08-15
申请号:US16329839
申请日:2017-10-20
Applicant: Dow Global Technologies LLC
Inventor: Robert David Grigg , Liam P. Spencer , John W. Kramer , David D. Devore , Brian Goodfellow , Chun Liu , Sukrit Mukhopadhyay , Thomas H. Peterson , William H. H. Woodward , Anatoliy N. Sokolov
CPC classification number: H01L51/0042 , H01L51/008 , H01L51/0081 , H01L51/0082 , H01L51/5056 , H01L51/5088
Abstract: Provided is an organic light-emitting diode comprising a substrate, an anode layer, optionally one or more hole injection layers, one or more hole transport layers, optionally one or more electron blocking layers, an emitting layer, optionally one or more hole blocking layers, optionally one or more electron transport layers, an electron injection layer, and a cathode, wherein either the hole injection layer, or the hole transport layer, or both of the hole injection layer and the hole transport layer, or layer that functions as both a hole injection layer and a hole transport layer, comprises a polymer that comprises one or more triaryl aminium radical cations having the structure (S1) wherein each of R11, R12, R13, R14, R15, R21, R22, R23, R24, R25, R31, R32, R33, R34, and R35 is independently selected from the group consisting of hydrogen, deuterium halogens, amine groups, hydroxyl groups, sulfonate groups, nitro groups, and organic groups, wherein two or more of R11, R12, R13, R14, R15, R21, R22, R23, R24, R25, R31, R32, R33, R34, and R35 are optionally connected to each other to form a ring structure; wherein one or more of R11, R12, R13, R14, R15, R21, R22, R23, R24, R25, R31, R32, R33, R34, and R35 is covalently bound to the polymer, and wherein A is an anion.
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公开(公告)号:US20200185604A1
公开(公告)日:2020-06-11
申请号:US16329836
申请日:2017-10-20
Applicant: Dow Global Technologies LLC
Inventor: Robert David Grigg , Liam P. Spencer , John W. Kramer , David D. Devore , Brian Goodfellow , Chun Liu , Sukrit Mukhopadhyay , Thomas H. Peterson , William H. H. Woodward , Anatoliy N. Sokolov
IPC: H01L51/00 , C07D209/86 , C09K11/06 , C07C211/61
Abstract: Provided is an organic light-emitting diode comprising a substrate, an anode layer, optionally one or more hole injection layers, one or more hole transport layers, optionally one or more electron blocking layers, an emitting layer, optionally one or more hole blocking layers, optionally one or more electron transport layers, an electron injection layer, and a cathode, wherein either the hole injection layer, or the hole transport layer, or both of the hole injection layer and the hole transport layer, or a layer that functions as both a hole injection layer and a hole transport layer, comprises a polymer that comprises one or more triaryl aminium radical cations having the structure (S1) wherein each of R11, R12, R13, R14, R15, R21, R22, R23, R24, R25, R31, R32, R33, R34, and R35 is independently selected from the group consisting of hydrogen, deuterium halogens, amine groups, hydroxyl groups, sulfonate groups, nitro groups, and organic groups, wherein two or more of R11, R12, R13, R14, R15, R21, R22, R23, R24, R25, R31; R32; R33 R34 and R35 are optionally connected to each other to form a ring structure; wherein one or more of R11, R12, R13, R14, R15, R21, R22, R23, R24, R25, R31, R32, R33, R34, and R35 is covalently bound to the polymer, and wherein A″ is an anion.
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公开(公告)号:US11367835B2
公开(公告)日:2022-06-21
申请号:US16344406
申请日:2017-06-26
Inventor: Anatoliy N. Sokolov , Brian Goodfellow , Robert David Grigg , Liam P. Spencer , John W. Kramer , David D. Devore , Sukrit Mukhopadhyay , Peter Trefonas, III
Abstract: The present invention provides a quantum dot light emitting diode comprising i) an emitting layer of at least one semiconductor nanoparticle made from semiconductor materials selected from the group consisting of Group II-VI compounds, Group II-V compounds, Group III-VI compounds, Group III-V compounds, Group IV-VI compounds, Group I-III-VI compounds, Group II-IV-VI compounds, Group II-IV-V compounds, or any combination thereof; and ii) a polymer for hole injection or hole transport layer, comprising one or more triaryl aminium radical cations having the structure (S1).
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公开(公告)号:US10818860B2
公开(公告)日:2020-10-27
申请号:US16311186
申请日:2017-06-26
Inventor: Anatoliy N Sokolov , Brian Goodfellow , Robert David Grigg , Liam P Spencer , John W Kramer , David D Devore , Sukrit Mukhopadhyay , Peter Trefonas, III
Abstract: The present invention provides a quantum dot light emitting diode comprising i) an emitting layer of at least one semiconductor nanoparticle made from semiconductor materials selected from the group consisting of Group II-VI compounds, Group II-V compounds, Group III-VI compounds, Group III-V compounds, Group IV-VI compounds, Group I-III-VI compounds, Group II-IV-VI compounds, Group II-IV-V compounds, or any combination thereof; and ii) a polymer for hole injection or hole transport layer; and the polymer comprises, as polymerized units, at least one or more monomers having a first monomer structure comprising a) a polymerizable group, b) an electroactive group with formula NAr1Ar2Ar3 wherein Ar1, Ar2 and Ar3 independently are C6-C50 aromatic substituents, and (c) a linker group connecting the polymerizable group and the electroactive group.
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