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公开(公告)号：US20230121639A1
公开(公告)日：2023-04-20
申请号：US17968286
申请日：2022-10-18
Applicant: ENTEGRIS, INC.
Inventor： Hyongpyo Hong , Chia-Jung Hsu , Atanu K. Das
Abstract: A composition and method for etching molybdenum-containing film on a microelectronic device substrate is provided. A microelectronic device substrate is contacted with the composition of the invention for a time sufficient to at least partially remove the molybdenum-containing film. The composition comprises at least one oxidizing agent, at least one complexing agent, at least one cationic surfactant, and has a pH of from about 7.5 to about 13. The etchant composition selectively removes molybdenum at an etch rate of about 20 to 50 Å/minute at room temperature, with improved uniformity of removal.
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