公开(公告)号：US20220412900A1

公开(公告)日：2022-12-29

申请号：US17357409

申请日：2021-06-24

Applicant: FEI Company

Inventor： Han Han ,  Libor Strakos ,  Thomas Hantschel ,  Tomas Vystavel ,  Clement Porret

IPC: G01N23/203 ,  H01J37/28 ,  H01J37/244

Abstract: Methods and apparatus determine offcut angle of a crystalline sample using electron channeling patterns (ECPs), wherein backscattered electron intensity exhibits angular variation dependent on crystal orientation. A zone axis normal to a given crystal plane follows a circle as the sample is azimuthally rotated. On an ECP image presented with tilt angles as axes, the radius of the circle is the offcut angle of the sample. Large offcut angles are determined by a tilt technique that brings the zone axis into the ECP field of view. ECPs are produced with a scanning electron beam and a monolithic backscattered electron detector; or alternatively with a stationary electron beam and a pixelated electron backscatter diffraction detector. Applications include strain engineering, process monitoring, detecting spatial variations, and incoming wafer inspection. Methods are 40× faster than X-ray diffraction. 0.01-0.1° accuracy enables semiconductor applications.

公开(公告)号：US11650171B2

公开(公告)日：2023-05-16

申请号：US17357409

申请日：2021-06-24

Applicant: FEI Company

Inventor： Han Han ,  Libor Strakos ,  Thomas Hantschel ,  Tomas Vystavel ,  Clement Porret

IPC: H01J37/244 ,  G01N23/203 ,  H01J37/28

CPC classification number: G01N23/203 ,  H01J37/244 ,  H01J37/28 ,  G01N2223/6116

Abstract: Methods and apparatus determine offcut angle of a crystalline sample using electron channeling patterns (ECPs), wherein backscattered electron intensity exhibits angular variation dependent on crystal orientation. A zone axis normal to a given crystal plane follows a circle as the sample is azimuthally rotated. On an ECP image presented with tilt angles as axes, the radius of the circle is the offcut angle of the sample. Large offcut angles are determined by a tilt technique that brings the zone axis into the ECP field of view. ECPs are produced with a scanning electron beam and a monolithic backscattered electron detector; or alternatively with a stationary electron beam and a pixelated electron backscatter diffraction detector. Applications include strain engineering, process monitoring, detecting spatial variations, and incoming wafer inspection. Methods are 40× faster than X-ray diffraction. 0.01-0.1° accuracy enables semiconductor applications.