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    OFFCUT ANGLE DETERMINATION USING ELECTRON CHANNELING PATTERNS
    2.
    发明申请
    OFFCUT ANGLE DETERMINATION USING ELECTRON CHANNELING PATTERNS 有权

    公开(公告)号：US20220412900A1

    公开(公告)日：2022-12-29

    申请号：US17357409

    申请日：2021-06-24

    申请人： FEI Company

    发明人： Han Han ,  Libor Strakos ,  Thomas Hantschel ,  Tomas Vystavel ,  Clement Porret

    IPC分类号： G01N23/203 ,  H01J37/28 ,  H01J37/244

    摘要： Methods and apparatus determine offcut angle of a crystalline sample using electron channeling patterns (ECPs), wherein backscattered electron intensity exhibits angular variation dependent on crystal orientation. A zone axis normal to a given crystal plane follows a circle as the sample is azimuthally rotated. On an ECP image presented with tilt angles as axes, the radius of the circle is the offcut angle of the sample. Large offcut angles are determined by a tilt technique that brings the zone axis into the ECP field of view. ECPs are produced with a scanning electron beam and a monolithic backscattered electron detector; or alternatively with a stationary electron beam and a pixelated electron backscatter diffraction detector. Applications include strain engineering, process monitoring, detecting spatial variations, and incoming wafer inspection. Methods are 40× faster than X-ray diffraction. 0.01-0.1° accuracy enables semiconductor applications.

    METHOD OF MODIFYING A SAMPLE SURFACE LAYER FROM A MICROSCOPIC SAMPLE
    3.
    发明申请
    METHOD OF MODIFYING A SAMPLE SURFACE LAYER FROM A MICROSCOPIC SAMPLE 审中-公开
    从微观样品中修饰样品表面层的方法

    公开(公告)号：US20160199878A1

    公开(公告)日：2016-07-14

    申请号：US14992743

    申请日：2016-01-11

    申请人： FEI Company

    发明人： Tomas Vystavel ,  Aurelien Philippe Jean Maclou Botman

    IPC分类号： B05D5/02 ,  B05C3/10 ,  B05D3/04 ,  C23C18/16 ,  H01L21/02 ,  C25D5/16 ,  C25D21/04 ,  H01L21/306 ,  H01L21/3205 ,  B05D5/00 ,  C25D7/12

    CPC分类号： B05D5/02 ,  B05C3/10 ,  B05D3/0493 ,  B05D5/00 ,  C23C18/1633 ,  C25D5/16 ,  C25D7/12 ,  C25D21/04 ,  G01N1/32 ,  G01N1/44 ,  H01J37/20 ,  H01J37/317 ,  H01J2237/20 ,  H01J2237/2067 ,  H01J2237/31745 ,  H01L21/02041 ,  H01L21/30604 ,  H01L21/32051

    摘要： A method of modifying a sample surface layer in the vacuum chamber of a particle-optical apparatus, the method performed in vacuum, the method comprising: Providing the microscopic sample attached to a manipulator, Providing a first liquid at a first (controlled) temperature, Dipping the sample in the first liquid, thereby causing a sample surface modification, Removing the sample from the first liquid, Providing a second liquid at a second (controlled) temperature, Dipping the sample in the second liquid, and Removing the sample from the second liquid. This enables the wet processing of a sample in-situ, thereby enhancing speed and/or avoiding subsequent alteration/contamination of the sample, such as oxidation, etc. The method is particularly useful for etching a lamella after machining the lamella with a (gallium) FIB to remove the surface layer where gallium implantation occurred, or where the crystal lattice is disturbed.

    摘要翻译： 一种修改粒子光学装置的真空室中的样品表面层的方法，该方法是在真空中进行的，该方法包括：提供附着于机械手的微观样品，在第一（受控）温度下提供第一液体， 将样品浸入第一液体中，从而引起样品表面改性，从第一液体中取出样品，在第二（受控）温度下提供第二液体，将样品浸入第二液体，并从第二液体中取出样品 液体。 这使得能够原地对样品进行湿法处理，从而提高速度和/或避免样品随后的变化/污染，例如氧化等。该方法特别可用于在用（镓 ）FIB以去除发生镓注入的表面层，或者晶格被扰乱的表面层。

    Reinforced sample for transmission electron microscope
    5.
    发明授权
    Reinforced sample for transmission electron microscope 有权

    公开(公告)号：US09837246B1

    公开(公告)日：2017-12-05

    申请号：US15217968

    申请日：2016-07-22

    申请人： FEI Company

    发明人： Remco Theodorus Johannes Petrus Geurts ,  Tomas Vystavel

    IPC分类号： G03F1/26 ,  G03F1/62 ,  C09K13/00 ,  H01J37/302 ,  H01J37/31

    CPC分类号： H01J37/3023 ,  H01J37/31 ,  H01J2237/3174

    摘要： A lamella for observation on a transmission electron microscope and other analytical instruments includes multiple thin regions separated by thicker regions or ribs. In some embodiments, the lamella can be wider than 50 μm with more than 10 multiple thin regions, with each thin region may being as thin as 10 nm or even thinner. The process for making such lamellae lends itself to automation. The process is fault tolerant in that not all of the multiple thin regions need to be useable as long as one region provides a useful image. Redeposition is reduced because ion beam imaging is reduced in the automated process and because the ribs reduce redeposition between regions.

    Method and system for imaging a multi-pillar sample
    6.
    发明授权
    Method and system for imaging a multi-pillar sample 有权

    公开(公告)号：US11476079B1

    公开(公告)日：2022-10-18

    申请号：US17219425

    申请日：2021-03-31

    申请人： FEI Company

    发明人： Jakub Kuba ,  Tomas Vystavel ,  Magda Zaoralova

    IPC分类号： H01J37/20 ,  H01J37/26 ,  H01J37/22

    摘要： Methods include providing a multi-pillar sample including at least a first pillar and a second pillar parallel with the first pillar, directing a charged particle beam to the first pillar, imaging the first pillar at a plurality of rotational positions by rotating the multi-pillar sample about a first pillar axis of the first pillar, directing the charged particle beam to the second pillar, and imaging the second pillar at a plurality of rotational positions by rotating the multi-pillar sample about a second pillar axis of the second pillar. Related apparatus for performing disclosed methods are disclosed. Multi-pillar samples are also disclosed.

    METHOD AND SYSTEM FOR IMAGING A MULTI-PILLAR SAMPLE
    7.
    发明申请
    METHOD AND SYSTEM FOR IMAGING A MULTI-PILLAR SAMPLE 有权

    公开(公告)号：US20220319799A1

    公开(公告)日：2022-10-06

    申请号：US17219425

    申请日：2021-03-31

    申请人： FEI Company

    发明人： Jakub Kuba ,  Tomas Vystavel ,  Magda Zaoralova

    IPC分类号： H01J37/20 ,  H01J37/22

    摘要： Methods include providing a multi-pillar sample including at least a first pillar and a second pillar parallel with the first pillar, directing a charged particle beam to the first pillar, imaging the first pillar at a plurality of rotational positions by rotating the multi-pillar sample about a first pillar axis of the first pillar, directing the charged particle beam to the second pillar, and imaging the second pillar at a plurality of rotational positions by rotating the multi-pillar sample about a second pillar axis of the second pillar. Related apparatus for performing disclosed methods are disclosed. Multi-pillar samples are also disclosed.

    Measurement and endpointing of sample thickness
    8.
    发明授权
    Measurement and endpointing of sample thickness 有权

    公开(公告)号：US10978272B2

    公开(公告)日：2021-04-13

    申请号：US16579006

    申请日：2019-09-23

    申请人： FEI Company

    发明人： Tomas Vystavel ,  Pavel Stejskal ,  Marek Uncovsky

    IPC分类号： H01J37/28 ,  G01B11/06

    摘要： The invention relates to a method of determining the thickness of a sample. According to this method, a diffraction pattern image of a sample of a first material is obtained. Said diffraction pattern image comprises at least image values representative for the diffraction pattern obtained for said sample. A slope of said image values is then determined. The slope is compared to a relation between the thickness of said first material and the slope of image value of a corresponding diffraction pattern image of said first material. The determined slope and said relation are used to determine the thickness of said sample.

    SPECIMEN HOLDER FOR A CHARGED PARTICLE MICROSCOPE
    9.
    发明申请
    SPECIMEN HOLDER FOR A CHARGED PARTICLE MICROSCOPE 有权
    充电颗粒显微镜样品座

    公开(公告)号：US20160181059A1

    公开(公告)日：2016-06-23

    申请号：US14977436

    申请日：2015-12-21

    申请人： FEI Company

    发明人： Tomas Vystavel ,  Josef Sestak ,  Pavel Poloucek ,  Lubomir Tuma ,  Michal Hrouzek ,  Tomas Trnkocy ,  Martin Cafourek

    IPC分类号： H01J37/16

    CPC分类号： H01J37/16 ,  H01J37/20 ,  H01J37/26 ,  H01J2237/2007 ,  H01J2237/202 ,  H01J2237/20207 ,  H01J2237/20214 ,  H01J2237/20278 ,  H01J2237/204 ,  H01J2237/206

    摘要： A specimen holder for a Charged Particle Microscope, comprising: A support structure; An elongated member, a first end of which is connected to said support structure and the second end of which comprises a specimen mounting zone, the member having a longitudinal axis that extends along its length between said first and second ends, wherein said specimen mounting zone comprises: A rotor that is rotatable about a transverse axis extending substantially perpendicular to said longitudinal axis; A paddle connected to said rotor so as to be rotatable about said transverse axis, the paddle comprising a specimen mounting area; Driving means connected to said rotor, which can be invoked to rotate said paddle through a rotational range that allows the paddle to be inverted relative to an initial orientation thereof.

    摘要翻译： 一种带电粒子显微镜的标本支架，包括：支撑结构; 细长构件，其第一端连接到所述支撑结构，并且其第二端包括试样安装区，所述构件具有沿其长度在所述第一和第二端之间延伸的纵向轴线，其中所述试样安装区 包括：可围绕基本上垂直于所述纵向轴线延伸的横向轴线旋转的转子; 连接到所述转子以便围绕所述横向轴线旋转的桨叶，所述桨叶包括样品安装区域; 连接到所述转子的驱动装置，其可被调用以使所述桨叶旋转通过允许桨叶相对于其初始取向而倒转的旋转范围。

    Offcut angle determination using electron channeling patterns
    10.
    发明授权
    Offcut angle determination using electron channeling patterns 有权

    公开(公告)号：US11650171B2

    公开(公告)日：2023-05-16

    申请号：US17357409

    申请日：2021-06-24

    申请人： FEI Company

    发明人： Han Han ,  Libor Strakos ,  Thomas Hantschel ,  Tomas Vystavel ,  Clement Porret

    IPC分类号： H01J37/244 ,  G01N23/203 ,  H01J37/28

    CPC分类号： G01N23/203 ,  H01J37/244 ,  H01J37/28 ,  G01N2223/6116

    摘要： Methods and apparatus determine offcut angle of a crystalline sample using electron channeling patterns (ECPs), wherein backscattered electron intensity exhibits angular variation dependent on crystal orientation. A zone axis normal to a given crystal plane follows a circle as the sample is azimuthally rotated. On an ECP image presented with tilt angles as axes, the radius of the circle is the offcut angle of the sample. Large offcut angles are determined by a tilt technique that brings the zone axis into the ECP field of view. ECPs are produced with a scanning electron beam and a monolithic backscattered electron detector; or alternatively with a stationary electron beam and a pixelated electron backscatter diffraction detector. Applications include strain engineering, process monitoring, detecting spatial variations, and incoming wafer inspection. Methods are 40× faster than X-ray diffraction. 0.01-0.1° accuracy enables semiconductor applications.