公开(公告)号：US20230175591A1

公开(公告)日：2023-06-08

申请号：US17922117

申请日：2021-06-30

Applicant: FLOWSERVE KSM CO., LTD.

Inventor： Yun Ho KIM ,  Joo Hwan KIM

IPC: F16J15/34 ,  F16J15/328 ,  F16J15/3284 ,  C04B35/52 ,  C04B35/565

CPC classification number: F16J15/3496 ,  C04B35/522 ,  C04B35/565 ,  F16J15/328 ,  F16J15/3284

Abstract: The present invention provides a sealing member which includes a substrate including silicon carbide; and a plurality of cylindrical or polygonal columnar graphites dispersed in the substrate, and a method for manufacturing the same.

公开(公告)号：US20230014978A1

公开(公告)日：2023-01-19

申请号：US17783150

申请日：2019-12-31

Applicant: FLOWSERVE KSM CO., LTD.

Inventor： Yun Ho KIM ,  Joo Hwan KIM

IPC: F16J15/54 ,  F04D29/12

Abstract: A stop seal for application of high temperature and high pressure is disclosed. A stop seal contains a first seal member and a second seal member, wherein the stop seal can prevent a fluid of high temperature and high pressure from leaking into an atmospheric space because, when the fluid of high temperature is introduced and the first seal member is moved toward a direction adjacent to a pump shaft, an opposite side of the second seal member is moved from a first position to a second position by the first seal member so as to block a gap between a pump side and a housing.

公开(公告)号：US20210249260A1

公开(公告)日：2021-08-12

申请号：US16973112

申请日：2019-10-31

Applicant: KSM COMPONENT CO., LTD. ,  FLOWSERVE KSM CO., LTD.

Inventor： Yun Ho KIM ,  Joo Hwan KIM ,  Ki Ryong LEE

IPC: H01L21/02

Abstract: Disclosed are: an electrostatic chuck having a high volume resistivity so as to reduce a leakage current, thereby improving the adsorption and desorption response characteristics of a semiconductor wafer; and a manufacturing method therefor. The electrostatic chuck is a sintered body in which an electrode is impregnated so as to fix a semiconductor wafer by electrostatic force, and comprises alumina, a sintering aid, and a rare earth composite oxide comprising two to five different rare earth metals, has adsorption and desorption response characteristics of a semiconductor wafer of two seconds or less, and has a volume resistivity at room temperature of 1.0E+16 Ω·cm to 1.0E+17 Ω·cm.