公开(公告)号：US20210249260A1

公开(公告)日：2021-08-12

申请号：US16973112

申请日：2019-10-31

Applicant: KSM COMPONENT CO., LTD. ,  FLOWSERVE KSM CO., LTD.

Inventor： Yun Ho KIM ,  Joo Hwan KIM ,  Ki Ryong LEE

IPC: H01L21/02

Abstract: Disclosed are: an electrostatic chuck having a high volume resistivity so as to reduce a leakage current, thereby improving the adsorption and desorption response characteristics of a semiconductor wafer; and a manufacturing method therefor. The electrostatic chuck is a sintered body in which an electrode is impregnated so as to fix a semiconductor wafer by electrostatic force, and comprises alumina, a sintering aid, and a rare earth composite oxide comprising two to five different rare earth metals, has adsorption and desorption response characteristics of a semiconductor wafer of two seconds or less, and has a volume resistivity at room temperature of 1.0E+16 Ω·cm to 1.0E+17 Ω·cm.

公开(公告)号：US20230175591A1

公开(公告)日：2023-06-08

申请号：US17922117

申请日：2021-06-30

Applicant: FLOWSERVE KSM CO., LTD.

Inventor： Yun Ho KIM ,  Joo Hwan KIM

IPC: F16J15/34 ,  F16J15/328 ,  F16J15/3284 ,  C04B35/52 ,  C04B35/565

CPC classification number: F16J15/3496 ,  C04B35/522 ,  C04B35/565 ,  F16J15/328 ,  F16J15/3284

Abstract: The present invention provides a sealing member which includes a substrate including silicon carbide; and a plurality of cylindrical or polygonal columnar graphites dispersed in the substrate, and a method for manufacturing the same.

公开(公告)号：US20230014978A1

公开(公告)日：2023-01-19

申请号：US17783150

申请日：2019-12-31

Applicant: FLOWSERVE KSM CO., LTD.

Inventor： Yun Ho KIM ,  Joo Hwan KIM

IPC: F16J15/54 ,  F04D29/12

Abstract: A stop seal for application of high temperature and high pressure is disclosed. A stop seal contains a first seal member and a second seal member, wherein the stop seal can prevent a fluid of high temperature and high pressure from leaking into an atmospheric space because, when the fluid of high temperature is introduced and the first seal member is moved toward a direction adjacent to a pump shaft, an opposite side of the second seal member is moved from a first position to a second position by the first seal member so as to block a gap between a pump side and a housing.

公开(公告)号：US20250136515A1

公开(公告)日：2025-05-01

申请号：US18888637

申请日：2024-09-18

Applicant: KSM COMPONENT CO., LTD.

Inventor： Yun Ho KIM ,  Joo Hwan KIM ,  Hwan Young PARK ,  Bo Sung KIM ,  Hyun Taek LEE

IPC: C04B35/103 ,  C04B35/638 ,  C04B35/64 ,  H01L21/687

Abstract: A ceramic susceptor particularly with excellent volumetric resistance at high temperatures and thermal conductivity at room temperature compared to a typical ceramic susceptor and a method for manufacturing the same are disclosed. The ceramic susceptor is characterized by comprising alumina (Al2O3); and aluminum nitride (AlN), and not comprising a secondary phase including an aluminum oxynitride phase (AlON phase).

公开(公告)号：US20240430989A1

公开(公告)日：2024-12-26

申请号：US18703474

申请日：2022-11-16

Applicant: KSM COMPONENT CO., LTD.

Inventor： Yun Ho KIM ,  Joo Hwan KIM ,  Hwan Young PARK ,  Bo Sung KIM

IPC: H05B3/26 ,  C04B35/581

Abstract: Disclosed is a ceramic heater for a semiconductor manufacturing apparatus, the ceramic heater having volume resistivity especially at high temperature and thermal conductivity at room temperature that are superior to those of a normal ceramic heater for a semiconductor manufacturing apparatus. The ceramic heater for a semiconductor manufacturing apparatus includes a ceramic substrate including a) aluminum nitride (AIN), b) any one or more among magnesium oxide (MgO), alumina (Al2O3) and spinel (MgAl2O4), c) calcium oxide (CaO) and d) titanium dioxide (TiO2); and a resistive heating element.

公开(公告)号：US20200219747A1

公开(公告)日：2020-07-09

申请号：US16629709

申请日：2018-05-15

Applicant: KSM COMPONENT CO., LTD.

Inventor： Yun Ho KIM ,  Joo Hwan KIM

IPC: H01L21/683 ,  C04B35/581 ,  C04B35/626 ,  C04B35/645

Abstract: One embodiment of the present invention discloses an electrostatic chuck made of an aluminum nitride sintered body, wherein the aluminum nitride sintered body comprises aluminum nitride and a composite oxide formed along the grain boundaries of the aluminum nitride, wherein the composite oxide comprises at least two kinds of rare earth metals which have a solid-solution relationship with each other, and wherein the composite oxide comprises a collection area having a higher oxygen content than a surrounding area.