公开(公告)号：US20240023454A1

公开(公告)日：2024-01-18

申请号：US18472168

申请日：2023-09-21

Applicant: FUJIFILM CORPORATION

Inventor： Hiroyuki KOBAYASHI ,  Seigo NAKAMURA ,  Fumihiko MOCHIZUKI ,  Hideaki TANAKA ,  Kenichiro INOUE ,  Yasushi TOYOSHIMA

IPC: H10N30/87 ,  C23C14/08 ,  C23C14/34 ,  H10N30/853 ,  H10N30/06

CPC classification number: H10N30/878 ,  C23C14/08 ,  C23C14/34 ,  H10N30/8554 ,  H10N30/06

Abstract: In a piezoelectric element including, on a substrate in the following order, a lower electrode layer, a piezoelectric film, and an upper electrode layer, the upper electrode layer includes an oxide conductive layer, has an interface layer containing a constituent element of the oxide conductive layer and an OH group, between the piezoelectric film and the oxide conductive layer of the upper electrode layer, where the interface layer has an amorphous structure and has a thickness of 1 nm or more and 5 nm or less, and in a case where a peak intensity of binding energy derived from a 1s orbital of oxygen bonded to a metal is denoted as α, and a peak intensity of binding energy derived from a 1s orbital of oxygen constituting the OH group is denoted as γ, a peak intensity ratio γ/α is 0.35 or more.