PIEZOELECTRIC ELEMENT AND MANUFACTURING METHOD FOR PIEZOELECTRIC ELEMENT

    公开(公告)号:US20240023453A1

    公开(公告)日:2024-01-18

    申请号:US18472170

    申请日:2023-09-21

    CPC classification number: H10N30/877 H10N30/06

    Abstract: The piezoelectric element is a piezoelectric element including, on a substrate in the following order, a lower electrode layer, a piezoelectric film containing a perovskite-type oxide as a main component, and an upper electrode layer, in which at least a region of the upper electrode layer closest to a side of the piezoelectric film is composed of an oxide conductive layer containing In, and regarding an interface region between the piezoelectric film and the oxide conductive layer of the upper electrode layer, in an intensity profile of binding energy, which is acquired by an X-ray photoelectron spectroscopy measurement, a peak intensity ratio γ/α satisfies γ/α≤0.25, wherein a is a peak intensity of binding energy derived from a 3d5/2 orbital of In bonded to oxygen, and γ is a peak intensity of binding energy derived from a 3d5/2 orbital of In bonded to an OH group.

    PIEZOELECTRIC LAMINATE AND PIEZOELECTRIC ELEMENT

    公开(公告)号:US20230255116A1

    公开(公告)日:2023-08-10

    申请号:US18191518

    申请日:2023-03-28

    CPC classification number: H10N30/8554 H10N30/877 H10N30/1051

    Abstract: A piezoelectric laminate and a piezoelectric element, including on a substrate in the following order, a lower electrode layer, and a piezoelectric film, in which a region of the lower electrode layer, the region being in contact with the piezoelectric film, is constituted of a metal layer, where a (111) plane of the metal layer has an inclination of 1° or more with respect to a surface of the substrate, and the piezoelectric film contains a perovskite-type oxide containing Pb.

    PHOTOELECTRIC CONVERSION DEVICE
    3.
    发明申请
    PHOTOELECTRIC CONVERSION DEVICE 审中-公开
    光电转换器件

    公开(公告)号:US20130233382A1

    公开(公告)日:2013-09-12

    申请号:US13872847

    申请日:2013-04-29

    CPC classification number: H01L31/03923 H01L31/022425 Y02E10/541

    Abstract: A photoelectric conversion device, which includes, on a substrate, a layered structure of a conductive layer formed by a transition metal element, a photoelectric conversion layer formed by a compound semiconductor containing a group Ib element, a group IIIb element and a group VIb element, and a transparent electrode, further includes a transition metal dichalcogenide thin film formed by the transition metal element and the group VIb element between the conductive layer and the photoelectric conversion layer. 80% or less of lot of crystallites forming the transition metal dichalcogenide thin film and occupying the surface of the conductive layer, on which the thin film is formed, have the c-axes thereof oriented substantially perpendicular to the surface of the conductive layer.

    Abstract translation: 一种光电转换装置,在基板上包括由过渡金属元素形成的导电层的层叠结构,由含有Ib族元素,IIIb族元素和VIb族元素的化合物半导体形成的光电转换层 和透明电极,还包括由所述过渡金属元素形成的过渡金属二硫属元素化物薄膜和所述导电层与所述光电转换层之间的VIb族元素。 形成过渡金属二硫属元素化薄膜的微晶的80%以下,占据其上形成有薄膜的导电层的表面,其c轴取向为基本上垂直于导电层的表面。

    PIEZOELECTRIC LAMINATE AND PIEZOELECTRIC ELEMENT

    公开(公告)号:US20250098542A1

    公开(公告)日:2025-03-20

    申请号:US18805550

    申请日:2024-08-15

    Abstract: A piezoelectric laminate comprise: a substrate; and a lower electrode layer, a seed layer, and a piezoelectric film, in which the piezoelectric film contains, as a main component, a first perovskite-type oxide containing Pb, Zr, Ti, and Nb, the seed layer contains, as a main component, a second perovskite-type oxide that is lattice-matched with the first perovskite-type oxide, and in a crystal grain size distribution acquired by an electron back scattered diffraction method, a proportion of crystal grains having a grain size of 100 nm or less is 15% or less in the piezoelectric film, and, the piezoelectric film satisfies the following expressions: |Ec++Ec− |

    PIEZOELECTRIC ELEMENT AND ACTUATOR
    5.
    发明公开

    公开(公告)号:US20240114793A1

    公开(公告)日:2024-04-04

    申请号:US18458124

    申请日:2023-08-29

    CPC classification number: H10N30/03 H10N30/05 H10N30/1071 H10N30/87

    Abstract: A piezoelectric element includes a substrate; and a first electrode, a first piezoelectric film, a second electrode, a second piezoelectric film, and a third electrode which are provided on the substrate in this order, in which both the first piezoelectric film and the second piezoelectric film contain PZT having a metal element M doped thereto, as a main component, one piezoelectric film of the first piezoelectric film and the second piezoelectric film has a spontaneous polarization aligned in a film thickness direction, and in a case where in a hysteresis curve showing polarization-voltage characteristics of the one piezoelectric film, a coercive voltage Vcf+ on a positive side and a coercive voltage Vcf− on a negative side, and in polarization-voltage characteristics of the other piezoelectric film, a coercive voltage Vcr+ on a positive side and a coercive voltage Vcr− on a negative sid, |Vcr++Vcr−|

    PIEZOELECTRIC LAMINATE, PIEZOELECTRIC ELEMENT, AND MANUFACTURING METHOD FOR PIEZOELECTRIC LAMINATE

    公开(公告)号:US20230144847A1

    公开(公告)日:2023-05-11

    申请号:US18053247

    申请日:2022-11-07

    CPC classification number: H01L41/312 H01L41/183

    Abstract: There is provided a piezoelectric laminate has, on a substrate in the following order, a lower electrode layer and a piezoelectric film containing a perovskite-type oxide as a main component. The piezoelectric film has an oxygen-deficient region in a region in contact with the lower electrode layer. In a case where an average value of oxygen amounts in a region centrally located among three regions obtained by dividing the piezoelectric film into three equal parts in a thickness direction is denoted as a first average oxygen amount, and an average value of oxygen amounts in the oxygen-deficient region is denoted as a second average oxygen amount, a ratio R of the second average oxygen amount to the first average oxygen amount is less than 0.97. A thickness of the oxygen-deficient region is 120 nm or more and is ⅓ or less of a thickness of the entire piezoelectric film.

    PIEZOELECTRIC LAMINATE AND PIEZOELECTRIC ELEMENT

    公开(公告)号:US20230095101A1

    公开(公告)日:2023-03-30

    申请号:US17898688

    申请日:2022-08-30

    Abstract: A piezoelectric laminate and a piezoelectric element have, on a substrate in the following order, a lower electrode layer, and a piezoelectric film containing a perovskite-type oxide. The lower electrode layer includes a first layer arranged in a state of being in contact with the substrate and includes a second layer arranged in a state of being in contact with the piezoelectric film, the first layer contains Ti or TiW as a main component, the second layer is a uniaxial alignment film which contains Ir as a main component and in which the Ir is aligned in a (111) plane, and a half width at half maximum of an X-ray diffraction peak from the (111) plane is 0.3° or more.

    ARTIFICIAL PHOTOSYNTHESIS MODULE AND ARTIFICIAL PHOTOSYNTHESIS DEVICE

    公开(公告)号:US20190131470A1

    公开(公告)日:2019-05-02

    申请号:US16228398

    申请日:2018-12-20

    Abstract: Provided are an artificial photosynthesis module and an artificial photosynthesis device that have excellent energy conversion efficiency. The artificial photosynthesis module includes a first electrode that decomposes a raw material fluid with light to obtain a first fluid; a second electrode that decomposes the raw material fluid with the light to obtain a second fluid; and a diaphragm disposed between the first electrode and the second electrode. The diaphragm is formed of a membrane having through-holes, is immersed in pure water having a temperature of 25° C. for one minute, and has a light transmittance of 60% or more in a wavelength range of 380 nm to 780 nm in a state where the diaphragm is immersed in the pure water. The average hole diameter of the through-holes of the diaphragm is more than 0.1 μm and less than 50 μm. An artificial photosynthesis device has the above-described artificial photosynthesis module.

    PHOTOCATALYST ELECTRODE, ARTIFICIAL PHOTOSYNTHESIS MODULE, AND ARTIFICIAL PHOTOSYNTHESIS DEVICE

    公开(公告)号:US20190112721A1

    公开(公告)日:2019-04-18

    申请号:US16212297

    申请日:2018-12-06

    Abstract: Provided are a photocatalyst electrode, an artificial photosynthesis module, and an artificial photosynthesis device that have low electrical resistance, even in a case where the area is increased, in a case where a transparent conductive layer is used. The photocatalyst electrode is a photocatalyst electrode that has a substrate, a transparent conductive layer, a photocatalyst layer, and a linear metal electrical conductor, and splits water with light to produce a gas. The substrate, the transparent conductive layer, and the photocatalyst layer are laminated in this order, and the linear metal electrical conductor is in contact with the transparent conductive layer. The artificial photosynthesis module has the oxygen evolution electrode that splits the water with the light to produce oxygen, and a hydrogen evolution electrode that splits the water with the light to produce hydrogen. The oxygen evolution electrode and the hydrogen evolution electrode are disposed in series in a traveling direction of the light. At least one of the oxygen evolution electrode or the hydrogen evolution electrode has the configuration of the above-described photocatalyst electrode. The artificial photosynthesis device has the artificial photosynthesis module, and circulates and utilizes water.

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