公开(公告)号：US09123858B2

公开(公告)日：2015-09-01

申请号：US13851842

申请日：2013-03-27

Applicant: FUJIFILM CORPORATION

Inventor： Tetsuro Mitsui ,  Yuki Kuramoto

IPC: H01L31/18 ,  H01L27/30 ,  H01L27/146

CPC classification number: H01L31/18 ,  H01L27/146 ,  H01L27/307

Abstract: A method for manufacturing a photoelectric conversion device including a first process where a plurality of pixel electrodes are formed on a dielectric layer; a second process where a light receiving layer that includes an organic material is formed on the plurality of pixel electrodes; and a third process where a counter electrode is formed on the light receiving layer. The first process includes a film forming process of a pixel electrode material on the dielectric layer; a patterning process of the film of the pixel electrode material; and a heating process for heating the substrate at 270° C. after the patterning process. Such process forming a photoelectric conversion device of a solid-state imaging device which also includes a signal reading circuit formed on the substrate, the signal reading circuit capable of reading out the signal according to a quantity of electric charges collected in the first electrode.

Abstract translation: 一种制造光电转换装置的方法，包括在电介质层上形成多个像素电极的第一工序; 在所述多个像素电极上形成有包含有机材料的受光层的第二工序; 以及在光接收层上形成对电极的第三工序。 第一工艺包括在电介质层上的像素电极材料的成膜工艺; 像素电极材料的膜的图案化工艺; 以及在图案化处理之后在270℃下加热基板的加热工艺。 这种形成固态成像器件的光电转换器件的工艺还包括形成在衬底上的信号读取电路，该信号读取电路能够根据在第一电极中收集的电荷量来读出信号。