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    Imaging element and method for manufacturing imaging element
    7.
    发明授权
    Imaging element and method for manufacturing imaging element 有权

    公开(公告)号：US12022217B2

    公开(公告)日：2024-06-25

    申请号：US18356384

    申请日：2023-07-21

    Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATION

    Inventor： Sachio Nishi ,  Hironobu Fukagawa ,  Hideaki Kato ,  Akimitsu Sato

    IPC: H04N25/704 ,  H01L27/146

    CPC classification number: H04N25/704 ,  H01L27/146

    Abstract: Provided is an imaging element that includes a pixel array unit, an individual on-chip lens, a common on-chip lens, and an adjacent on-chip lens. The individual on-chip lens is arranged for each of pixels and individually condenses incident light components on corresponding one of the pixels. The common on-chip lens is commonly arranged in the plurality of phase difference pixels and commonly condenses the incident light components. The adjacent on-chip lens is arranged for each of a phase difference pixel adjacent pixels, individually condenses the incident light components on corresponding one of the phase difference pixel adjacent pixels, and is formed to have a size different from the individual on-chip lens to adjust a shape of the common on-chip lens.

    Solid state imaging element and electronic device
    8.
    发明授权
    Solid state imaging element and electronic device 有权

    公开(公告)号：US12015038B2

    公开(公告)日：2024-06-18

    申请号：US17719863

    申请日：2022-04-13

    Applicant: SONY GROUP CORPORATION

    Inventor： Sozo Yokogawa

    IPC: H01L27/146 ,  H01L31/028 ,  H01L31/0376

    CPC classification number: H01L27/1461 ,  H01L27/146 ,  H01L27/14629 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/14649 ,  H01L31/028 ,  H01L31/03762 ,  H04N2209/047

    Abstract: The present disclosure relates to a solid state imaging element and an electronic device that make it possible to improve sensitivity to light on a long wavelength side. A solid state imaging element according to a first aspect of the present disclosure has a solid state imaging element in which a large number of pixels are arranged vertically and horizontally, the solid state imaging element includes a periodic concave-convex pattern on a light receiving surface and an opposite surface to the light receiving surface of a light absorbing layer as a light detecting element. The present disclosure can be applied to, for example, a CMOS and the like installed in a sensor that needs a high sensitivity to light belonging to a region on the long wavelength side, such as light in the infrared region.

    Imaging element, imaging device, and manufacturing apparatus and method
    10.
    发明授权
    Imaging element, imaging device, and manufacturing apparatus and method 有权

    公开(公告)号：US11961857B2

    公开(公告)日：2024-04-16

    申请号：US17538230

    申请日：2021-11-30

    Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATION

    Inventor： Shinpei Fukuoka

    IPC: H01L27/146 ,  H01L29/10 ,  H01L29/423 ,  H01L29/78

    CPC classification number: H01L27/14616 ,  H01L27/146 ,  H01L27/14689 ,  H01L29/105 ,  H01L29/4236 ,  H01L29/42368 ,  H01L29/7827

    Abstract: The present technology relates to an imaging element, an imaging device, and a manufacturing apparatus and a method that facilitate electric charge transfer.
    An imaging element of the present technology includes a vertical transistor that has a potential with a gradient in at least part of a charge transfer channel that transfers electric charge of a photoelectric conversion unit. Also, an imaging device of the present technology includes: an imaging element including a vertical transistor that has a potential with a gradient in at least part of a charge transfer channel that transfers electric charge of a photoelectric conversion unit; and an image processing unit that performs image processing on captured image data obtained by the imaging element. Further, a manufacturing apparatus of the present technology includes a vertical transistor manufacturing unit that manufactures a vertical transistor having a potential with a gradient in at least part of a charge transfer channel that transfers electric charge of a photoelectric conversion unit. The present technology can be applied to imaging elements, imaging devices, and manufacturing apparatuses and methods, for example.

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