公开(公告)号：US11635864B2

公开(公告)日：2023-04-25

申请号：US17863052

申请日：2022-07-12

Applicant: FUJIFILM Corporation

Inventor： Katsuyuki Nukui ,  Tetsuro Mitsui

IPC: G06F3/044 ,  H05K1/16 ,  H05K1/02 ,  G06F3/041

Abstract: A touch sensor pattern includes: a plurality of detection electrodes; a plurality of lead wires that are connected to the plurality of detection electrodes and a plurality of external connection terminals that are connected to the plurality of lead wires, in which each of the plurality of external connection terminals includes a first fine metal wire having a smaller line width than each of the plurality of lead wires, and an area per unit length of at least a part of each of the plurality of external connection terminals in an extension direction in a plan view is 5.5 times or less an area per unit length of each of the plurality of lead wires in a plan view.

公开(公告)号：US09123858B2

公开(公告)日：2015-09-01

申请号：US13851842

申请日：2013-03-27

Applicant: FUJIFILM CORPORATION

Inventor： Tetsuro Mitsui ,  Yuki Kuramoto

IPC: H01L31/18 ,  H01L27/30 ,  H01L27/146

CPC classification number: H01L31/18 ,  H01L27/146 ,  H01L27/307

Abstract: A method for manufacturing a photoelectric conversion device including a first process where a plurality of pixel electrodes are formed on a dielectric layer; a second process where a light receiving layer that includes an organic material is formed on the plurality of pixel electrodes; and a third process where a counter electrode is formed on the light receiving layer. The first process includes a film forming process of a pixel electrode material on the dielectric layer; a patterning process of the film of the pixel electrode material; and a heating process for heating the substrate at 270° C. after the patterning process. Such process forming a photoelectric conversion device of a solid-state imaging device which also includes a signal reading circuit formed on the substrate, the signal reading circuit capable of reading out the signal according to a quantity of electric charges collected in the first electrode.

Abstract translation: 一种制造光电转换装置的方法，包括在电介质层上形成多个像素电极的第一工序; 在所述多个像素电极上形成有包含有机材料的受光层的第二工序; 以及在光接收层上形成对电极的第三工序。 第一工艺包括在电介质层上的像素电极材料的成膜工艺; 像素电极材料的膜的图案化工艺; 以及在图案化处理之后在270℃下加热基板的加热工艺。 这种形成固态成像器件的光电转换器件的工艺还包括形成在衬底上的信号读取电路，该信号读取电路能够根据在第一电极中收集的电荷量来读出信号。

公开(公告)号：US12007181B2

公开(公告)日：2024-06-11

申请号：US17505636

申请日：2021-10-20

Applicant: FUJIFILM Corporation

Inventor： Tetsuro Mitsui ,  Aya Nakayama ,  Takuto Matsushita

IPC: F28F21/06 ,  C09D7/61 ,  C09K5/06

CPC classification number: F28F21/06 ,  C09D7/61 ,  C09K5/063 ,  F28F2245/00 ,  F28F2260/00

Abstract: The present invention provides a heat storage member which is excellent in a heat storage property and of which a chronological change in a tint is suppressed. A heat storage member according to an embodiment of the present invention includes a heat storage sheet containing a microcapsule encompassing a heat storage material, and a colored layer.

公开(公告)号：US09012762B2

公开(公告)日：2015-04-21

申请号：US13674989

申请日：2012-11-13

Applicant: FUJIFILM Corporation

Inventor： Tetsuro Mitsui ,  Kimiatsu Nomura ,  Mitsumasa Hamano ,  Katsuyuki Yofu

IPC: H01L31/00 ,  H01L31/042 ,  H01L51/00 ,  B82Y10/00 ,  H01L27/30 ,  H01L51/42

CPC classification number: H01L51/0032 ,  B82Y10/00 ,  H01L27/307 ,  H01L51/0046 ,  H01L51/0047 ,  H01L51/0059 ,  H01L51/0072 ,  H01L51/424 ,  H01L51/4253

Abstract: A photoelectric conversion element is provided and includes: an electrically conductive thin layer; an organic photoelectric conversion layer; and a transparent electrically conductive thin layer. The organic photoelectric conversion layer contains: a compound represented by formula (I); and a fullerene or a fullerene derivative.Formula (I): In the formula, Z1 represents an atomic group necessary for forming a 5- or 6-membered ring, L1, L2 and L3 each independently represents an unsubstituted methine group or a substituted methine group, D1 represents an atomic group, and n represents an integer of 0 or more.

Abstract translation: 提供了一种光电转换元件，包括：导电薄层; 有机光电转换层; 和透明导电薄层。 有机光电转换层包含：式（I）表示的化合物; 和富勒烯或富勒烯衍生物。 式（I）：式中，Z1表示形成5元或6元环所必需的原子团，L1，L2和L3各自独立地表示未取代的次甲基或取代的次甲基，D1表示原子团， n表示0以上的整数。

公开(公告)号：US09070887B2

公开(公告)日：2015-06-30

申请号：US13945122

申请日：2013-07-18

Applicant: FUJIFILM Corporation

Inventor： Katsuyuki Yofu ,  Kimiatsu Nomura ,  Mitsumasa Hamano ,  Tetsuro Mitsui

IPC: H01L29/08 ,  H01L35/24 ,  H01L51/00 ,  H01L51/42 ,  B82Y10/00 ,  C07D411/00 ,  H01L27/30

CPC classification number: H01L51/42 ,  B82Y10/00 ,  C07D333/36 ,  C07D333/56 ,  C07D333/72 ,  C07D409/04 ,  C07D409/06 ,  C07D409/12 ,  C07D495/04 ,  C07D495/14 ,  C09B3/00 ,  C09B23/105 ,  C09B57/008 ,  H01L27/307 ,  H01L51/0046 ,  H01L51/0053 ,  H01L51/006 ,  H01L51/0061 ,  H01L51/0068 ,  H01L51/0072 ,  H01L51/0074 ,  H01L51/4253 ,  Y02E10/549

Abstract: A photoelectric conversion device comprising an electrically conductive film, an organic photoelectric conversion film, and a transparent electrically conductive film, wherein the organic photoelectric conversion film contains a compound represented by the following formula (1) and an n-type organic semiconductor: wherein each of R1 and R2 independently represents a substituted aryl group, an unsubstituted aryl group, a substituted heteroaryl group or an unsubstituted heteroaryl group, each of R3 to R11 independently represents a hydrogen atom or a substituent provided that an acidic group is excluded, m represents 0 or 1, n represents an integer of 0 or more, R1 and R2, R3 and R4, R3 and R5, R5 and R6, R6 and R8, R7 and R8, R7 and R9, or R10 and R11 may be combined each other to form a ring, and when n is an integer of 2 or more, out of a plurality of R7's and R8's, a pair of R7's, a pair of R8's, or a pair of R7 and R8 may be combined each other to form a ring.

Abstract translation: 一种光电转换元件，包括导电膜，有机光电转换膜和透明导电膜，其中有机光电转换膜包含由下式（1）表示的化合物和n型有机半导体：其中每个 R 1和R 2独立地表示取代的芳基，未取代的芳基，取代的杂芳基或未取代的杂芳基，只要不排除酸性基团，则R3至R11各自独立地表示氢原子或取代基，m表示0 或1，n表示0或更大的整数，R 1和R 2，R 3和R 4，R 3和R 5，R 5和R 6，R 6和R 8，R 7和R 8，R 7和R 9或R 10和R 11可以相互组合 形成环，当n为2以上的整数时，在多个R 7和R 8中，可以将一对R 7，一对R 8，或一对R 7和R 8相互组合形成环 。

公开(公告)号：US12175050B2

公开(公告)日：2024-12-24

申请号：US18188921

申请日：2023-03-23

Applicant: FUJIFILM Corporation

Inventor： Takato Suzuki ,  Tetsuro Mitsui

IPC: G06F3/044 ,  G03F7/00 ,  H05K1/03

Abstract: Provided are a conductive member for a touch panel and a manufacturing method thereof, the conductive member having a conductive layer including an opaque conductive material on a flexible transparent insulating substrate, such that damage of the conductive layer is prevented. The manufacturing method of the conductive member including a first conductive layer, an interlayer insulating layer, and a second conductive layer in this order on the flexible substrate, includes: 1) forming the first conductive layer on the substrate; 2) forming the interlayer insulating layer; and 3) forming the second conductive layer, in which each of the steps 1 and 3 includes forming a fine metal wire using a photolithography method, a thickness of the interlayer insulating layer is 1 to 5 μm, and the bend resistance obtained by measuring the conductive member using a cylindrical mandrel method according to JIS-K5600-5-1 is less than 5 mm.

公开(公告)号：US11959010B2

公开(公告)日：2024-04-16

申请号：US17477558

申请日：2021-09-17

Applicant: FUJIFILM Corporation

Inventor： Tetsuro Mitsui ,  Naotoshi Sato ,  Aya Nakayama ,  Takuto Matsushita ,  Masahiro Hatta ,  Hiroshi Kawakami

IPC: C09K5/06 ,  C09K21/04 ,  F28D20/02

CPC classification number: C09K5/063 ,  C09K21/04 ,  F28D20/02

Abstract: An object of the present invention is to provide a heat storage composition excellent in slow flame retardance and a heat storage member excellent in the slow flame retardance. Another object of the present invention is to provide an electronic device including a heat storage member, and a manufacturing method of a heat storage member.
The heat storage composition according to an embodiment of the present invention contains a heat storage material and a flame retardant, in which a specific condition A is satisfied. The heat storage member according to an embodiment of the present invention contains a heat storage material and a flame retardant, in which a specific condition C is satisfied.

公开(公告)号：US09349965B2

公开(公告)日：2016-05-24

申请号：US13789537

申请日：2013-03-07

Applicant: FUJIFILM CORPORATION

Inventor： Katsuyuki Yofu ,  Kimiatsu Nomura ,  Eiji Fukuzaki ,  Yuki Hirai ,  Mitsumasa Hamano ,  Tetsuro Mitsui

IPC: C07D221/18 ,  C07D221/22 ,  C07D223/14 ,  H01L51/00 ,  C07D219/02 ,  C07D455/03 ,  C07D455/06 ,  C07D471/14 ,  C07D471/16 ,  C07C225/22 ,  H01L51/42

CPC classification number: H01L51/0072 ,  C07C225/22 ,  C07D219/02 ,  C07D221/18 ,  C07D455/03 ,  C07D455/06 ,  C07D471/14 ,  C07D471/16 ,  C09B21/00 ,  C09B23/04 ,  C09B57/008 ,  H01L51/0052 ,  H01L51/0058 ,  H01L51/0059 ,  H01L51/0094 ,  H01L51/4206 ,  H01L51/4273 ,  Y02E10/549

Abstract: There is provided a compound represented by a specific formula, which has an absorption maximum at 400 nm or more and less than 720 nm in a UV-visible absorption spectrum, wherein a molar extinction coefficient is 10,000 mol−1·l·cm−1 or more at the absorption maximum wavelength, and a difference between a melting point and a deposition temperature (a melting point−a deposition temperature) is 31° C. or more.

Abstract translation: 提供一种具有特定化学式的化合物，其在紫外可见吸收光谱中在400nm以上且小于720nm处具有吸收最大值，其摩尔消光系数为10,000mol -1·l·cm -1 以上的吸收最大波长，熔点与沉积温度（熔点 - 沉积温度）之间的差为31℃以上。

公开(公告)号：US09258463B2

公开(公告)日：2016-02-09

申请号：US14222413

申请日：2014-03-21

Applicant: FUJIFILM CORPORATION

Inventor： Tetsuro Mitsui ,  Takuro Sugiyama

IPC: H04N5/225 ,  B82Y10/00 ,  H01L27/30 ,  H01L51/00 ,  H01L51/42

CPC classification number: H04N5/225 ,  B82Y10/00 ,  H01L27/307 ,  H01L51/0011 ,  H01L51/0046 ,  H01L51/0053 ,  H01L51/0058 ,  H01L51/006 ,  H01L51/0072 ,  H01L51/4273 ,  H01L2251/308

Abstract: The solid-state imaging device includes lower electrodes acting as pixel electrodes, an organic photoelectric conversion film formed on the lower electrodes and generating electric charge in response to received light, and a transparent upper electrode that are formed on a substrate having signal readout circuits. The organic photoelectric conversion film, a transition area having at least one of its film thickness and film quality undergone transition from a film thickness and film quality of an area corresponding to a pixel electrode area in which the lower electrodes have been formed is an area that starts from an outer edge of the organic photoelectric conversion film and ends at a point away from the outer edge by a distance of 200 μm or less.

Abstract translation: 固态成像装置包括用作像素电极的下电极，形成在下电极上的有机光电转换膜并响应于接收的光产生电荷，以及形成在具有信号读出电路的基板上的透明上电极。 有机光电转换膜，其膜厚度和膜质量中的至少一个的过渡区域从膜厚度和与形成有下部电极的像素电极区域对应的区域的膜质量转变为具有以下区域： 从有机光电转换膜的外边缘开始，并且在远离外边缘的位置处终止200μm以下的距离。

公开(公告)号：US08637860B2

公开(公告)日：2014-01-28

申请号：US13733256

申请日：2013-01-03

Applicant: FUJIFILM Corporation

Inventor： Kimiatsu Nomura ,  Eiji Fukuzaki ,  Tetsuro Mitsui

IPC: H01L29/08 ,  C07D209/82

CPC classification number: H01L51/0072 ,  B82Y10/00 ,  C09B23/04 ,  C09B57/008 ,  C09B57/10 ,  H01L51/0046 ,  H01L51/005 ,  H01L51/0052 ,  H01L51/0059 ,  H01L51/0067 ,  H01L51/0069 ,  H01L51/0071 ,  H01L51/0094 ,  H01L51/4253 ,  Y02E10/549

Abstract: A photoelectric conversion device comprising a transparent electrically conductive film, a photoelectric conversion film and an electrically conductive film in this order, wherein the photoelectric conversion film comprises a photoelectric conversion layer, and an electron blocking layer, wherein the electron blocking layer contains a compound represented by the specific formula.

Abstract translation: 一种光电转换装置，包括透明导电膜，光电转换膜和导电膜，其中光电转换膜包括光电转换层和电子阻挡层，其中电子阻挡层含有表示的化合物 具体公式。