公开(公告)号：US20150118860A1

公开(公告)日：2015-04-30

申请号：US14593150

申请日：2015-01-09

Applicant: FUJIFILM Corporation

Inventor： Naotsugu MURO ,  Tetsuya KAMIMURA ,  Tadashi INABA ,  Takahiro WATANABE ,  Kee Young PARK

IPC: H01L21/306

CPC classification number: H01L21/30608 ,  H01L21/02063 ,  H01L21/31144 ,  H01L21/32134

Abstract: An etching method, having the step of applying an etching liquid onto a TiN-containing layer in a semiconductor substrate thereby etching the TiN-containing layer, the etching liquid comprising water, and a basic compound and an oxidizing agent in water thereof to be within the range of pH from 8.5 to 14, and the TiN-containing layer having a surface oxygen content from 0.1 mol % to 10 mol %.

Abstract translation: 一种蚀刻方法，具有将蚀刻液施加到半导体衬底中的含TiN层上的步骤，从而蚀刻含TiN层，将含有水的蚀刻液，水中的碱性化合物和氧化剂在其内 pH为8.5〜14的范围，表面氧含量为0.1摩尔％〜10摩尔％的含TiN的层。