公开(公告)号：US06797587B1

公开(公告)日：2004-09-28

申请号：US10641445

申请日：2003-08-13

申请人： Feng-Cheng Yang ,  Chung-Te Lin ,  Yea-Dean Sheu ,  Chih-Hung Wang

发明人： Feng-Cheng Yang ,  Chung-Te Lin ,  Yea-Dean Sheu ,  Chih-Hung Wang

IPC分类号： H01L2176

CPC分类号： H01L21/76237 ,  H01L21/823481

摘要： Within a method for forming an isolation region within a semiconductor substrate, there is, prior to forming the isolation region within an isolation trench formed adjoining an active region of a semiconductor substrate, implanted a dopant into a corner of the active region. The corner of the active region is uncovered by laterally etching an isolation trench mask to form a laterally etched isolation trench mask which serves as an ion implantation mask layer when implanting the dopant into the corner of the active region. The method provides for enhanced performance, and minimal affect of a semiconductor device formed within the active region of the semiconductor substrate.

摘要翻译： 在用于在半导体衬底内形成隔离区域的方法中，在形成邻接半导体衬底的有源区域的隔离沟槽内形成隔离区之前，将掺杂剂注入有源区的角部。 通过横向蚀刻隔离沟槽掩模来形成有源区域的角部，以形成横向蚀刻的隔离沟槽掩模，当将掺杂剂注入到有源区域的角部中时，其作为离子注入掩模层。 该方法提供了在半导体衬底的有源区域内形成的半导体器件的增强性能和最小的影响。

公开(公告)号：US09285926B2

公开(公告)日：2016-03-15

申请号：US13554052

申请日：2012-07-20

申请人： Feng-Cheng Yang ,  Ching-Lin Chung ,  Hsin-Chia Chen ,  Hui-Hsuan Chen

发明人： Feng-Cheng Yang ,  Ching-Lin Chung ,  Hsin-Chia Chen ,  Hui-Hsuan Chen

IPC分类号： G06F3/042

CPC分类号： G06F3/0421 ,  G06F2203/04109

摘要： An input device comprising an optical module having a light guide plate, a light source, a scattering layer and a sensor is provided. The light guide plate has a top surface, a bottom surface, and a side. The light source emits a light to the side. The light travels within the light guide plate. The scattering layer changes a path of parts of the light on the bottom surface so that the light is projected out of the top surface to form a penetrating light. When an object approaches or touches the top surface of the light guide plate, at least a part of the penetrating light is reflected by the object to form a reflected light received by the sensor. According to the reflected light, the input device generates a position signal indicating at least one relative position of the object with respect to the top surface.

摘要翻译： 一种包括具有导光板，光源，散射层和传感器的光学模块的输入装置。 导光板具有顶表面，底表面和侧面。 光源向侧面发光。 光在导光板内行进。 散射层改变底面上的光的部分路径，使得光从顶表面突出以形成穿透光。 当物体接近或接触导光板的顶表面时，穿透光的至少一部分被物体反射以形成由传感器接收的反射光。 根据反射光，输入装置产生指示物体相对于顶面的至少一个相对位置的位置信号。

公开(公告)号：US08501569B2

公开(公告)日：2013-08-06

申请号：US13157930

申请日：2011-06-10

申请人： Chih-Hsiang Huang ,  Feng-Cheng Yang

发明人： Chih-Hsiang Huang ,  Feng-Cheng Yang

IPC分类号： H01L21/336

CPC分类号： H01L29/7833 ,  H01L29/513 ,  H01L29/6653 ,  H01L29/66545 ,  H01L29/66636

摘要： The present disclosure provides a method of fabricating a semiconductor device. The method includes forming a gate over a substrate. The method includes performing a first implantation process to form a first doped region in the substrate, the first doped region being adjacent to the gate. The method includes performing a second implantation process to form a second doped region in the substrate, the second doped region being formed farther away from the gate than the first doped region, the second doped region having a higher doping concentration level than the first doped region. The method includes removing portions of the first and second doped regions to form a recess in the substrate. The method includes epitaxially growing a third doped region in the recess, the third doped region having a higher doping concentration level than the second doped region.

摘要翻译： 本公开提供了制造半导体器件的方法。 该方法包括在衬底上形成栅极。 该方法包括执行第一注入工艺以在衬底中形成第一掺杂区域，第一掺杂区域与栅极相邻。 该方法包括执行第二注入工艺以在衬底中形成第二掺杂区域，第二掺杂区域比第一掺杂区域远离栅极形成，第二掺杂区域具有比第一掺杂区域更高的掺杂浓度水平 。 该方法包括去除第一和第二掺杂区域的部分以在衬底中形成凹陷。 该方法包括在凹槽中外延生长第三掺杂区域，第三掺杂区域具有比第二掺杂区域更高的掺杂浓度水平。

公开(公告)号：US20130127713A1

公开(公告)日：2013-05-23

申请号：US13554052

申请日：2012-07-20

申请人： Feng-Cheng Yang ,  Ching-Lin Chung ,  Hsin-Chia Chen ,  Hui-Hsuan Chen

发明人： Feng-Cheng Yang ,  Ching-Lin Chung ,  Hsin-Chia Chen ,  Hui-Hsuan Chen

IPC分类号： G06F3/042 ,  G06F3/033

CPC分类号： G06F3/0421 ,  G06F2203/04109

摘要： An input device comprising an optical module having a light guide plate, a light source, a scattering layer and a sensor is provided. The light guide plate has a top surface, a bottom surface, and a side. The light source emits a light to the side. The light travels within the light guide plate. The scattering layer changes a path of parts of the light on the bottom surface so that the light is projected out of the top surface to form a penetrating light. When an object approaches or touches the top surface of the light guide plate, at least a part of the penetrating light is reflected by the object to form a reflected light received by the sensor. According to the reflected light, the input device generates a position signal indicating at least one relative position of the object with respect to the top surface.

摘要翻译： 一种包括具有导光板，光源，散射层和传感器的光学模块的输入装置。 导光板具有顶表面，底表面和侧面。 光源向侧面发光。 光在导光板内行进。 散射层改变底面上的光的部分路径，使得光从顶表面突出以形成穿透光。 当物体接近或接触导光板的顶表面时，穿透光的至少一部分被物体反射以形成由传感器接收的反射光。 根据反射光，输入装置产生指示物体相对于顶面的至少一个相对位置的位置信号。

公开(公告)号：US20120313167A1

公开(公告)日：2012-12-13

申请号：US13157930

申请日：2011-06-10

申请人： Chih-Hsiang Huang ,  Feng-Cheng Yang

发明人： Chih-Hsiang Huang ,  Feng-Cheng Yang

IPC分类号： H01L21/336 ,  H01L29/78

CPC分类号： H01L29/7833 ,  H01L29/513 ,  H01L29/6653 ,  H01L29/66545 ,  H01L29/66636

摘要： The present disclosure provides a method of fabricating a semiconductor device. The method includes forming a gate over a substrate. The method includes performing a first implantation process to form a first doped region in the substrate, the first doped region being adjacent to the gate. The method includes performing a second implantation process to form a second doped region in the substrate, the second doped region being formed farther away from the gate than the first doped region, the second doped region having a higher doping concentration level than the first doped region. The method includes removing portions of the first and second doped regions to form a recess in the substrate. The method includes epitaxially growing a third doped region in the recess, the third doped region having a higher doping concentration level than the second doped region.

摘要翻译： 本公开提供了制造半导体器件的方法。 该方法包括在衬底上形成栅极。 该方法包括执行第一注入工艺以在衬底中形成第一掺杂区域，第一掺杂区域与栅极相邻。 该方法包括执行第二注入工艺以在衬底中形成第二掺杂区域，第二掺杂区域比第一掺杂区域远离栅极形成，第二掺杂区域具有比第一掺杂区域更高的掺杂浓度水平 。 该方法包括去除第一和第二掺杂区域的部分以在衬底中形成凹陷。 该方法包括在凹槽中外延生长第三掺杂区域，第三掺杂区域具有比第二掺杂区域更高的掺杂浓度水平。

公开(公告)号：US20090125232A1

公开(公告)日：2009-05-14

申请号：US12243369

申请日：2008-10-01

申请人： Chi-Hsien Chiu ,  Feng-Cheng Yang

发明人： Chi-Hsien Chiu ,  Feng-Cheng Yang

IPC分类号： G01C21/32

CPC分类号： G01C21/365

摘要： A navigation system is disclosed. The navigation system includes a display element, a storage element and a reverse switch. The display element displays a position image, wherein the position image is generated according to position data received by the navigation system. The storage element stores an image-reversing process. Once the reverse switch is pressed, utilize the image-reversing process to make the display element display a reversed position image of the position image.

摘要翻译： 公开了导航系统。 导航系统包括显示元件，存储元件和反向开关。 显示元件显示位置图像，其中根据导航系统接收的位置数据生成位置图像。 存储元件存储图像反转处理。 一旦按下反向开关，利用图像反转处理使显示元件显示位置图像的反转位置图像。