Back contact paste with Te enrichment and copper doping control in thin film photovoltaic devices
    1.
    发明授权
    Back contact paste with Te enrichment and copper doping control in thin film photovoltaic devices 有权
    在薄膜光伏器件中的Te富集和铜掺杂控制的背接触膏

    公开(公告)号:US09159864B2

    公开(公告)日:2015-10-13

    申请号:US13950605

    申请日:2013-07-25

    Abstract: Methods for forming a back contact on a thin film photovoltaic device are provided that include applying a conductive paste onto a surface defined by a p-type absorber layer (e.g., comprising cadmium telluride) of a p-n junction and curing the conductive paste to form a conductive coating on the surface defined by a p-type absorber layer of the p-n junction. The conductive paste can include a conductive material, a solvent system, and a binder such that during curing an acid from the conductive paste reacts to enrich the surface with tellurium while copper is deposited onto the Te enriched surface. The acid is then substantially consumed during curing.

    Abstract translation: 提供了在薄膜光伏器件上形成背接触的方法,其包括将导电浆料涂覆在由pn结的p型吸收层(例如,包含碲化镉)所限定的表面上,并固化导电糊以形成 在由pn结的p型吸收层限定的表面上的导电涂层。 导电浆料可以包括导电材料,溶剂系统和粘合剂,使得在固化过程中,来自导电浆料的酸反应以使碲表面富集,同时铜沉积到富Te表面上。 然后酸在固化过程中基本消耗。

    Back Contact Paste with Te Enrichment and Copper Doping Control in Thin Film Photovoltaic Devices
    2.
    发明申请
    Back Contact Paste with Te Enrichment and Copper Doping Control in Thin Film Photovoltaic Devices 有权
    在薄膜光伏器件中的Te浓缩和铜掺杂控制的背面接触膏

    公开(公告)号:US20150031163A1

    公开(公告)日:2015-01-29

    申请号:US13950605

    申请日:2013-07-25

    Abstract: Methods for forming a back contact on a thin film photovoltaic device are provided that include applying a conductive paste onto a surface defined by a p-type absorber layer (e.g., comprising cadmium telluride) of a p-n junction and curing the conductive paste to form a conductive coating on the surface defined by a p-type absorber layer of the p-n junction. The conductive paste can include a conductive material, a solvent system, and a binder such that during curing an acid from the conductive paste reacts to enrich the surface with tellurium while copper is deposited onto the Te enriched surface. The acid is then substantially consumed during curing.

    Abstract translation: 提供了在薄膜光伏器件上形成背接触的方法,其包括将导电浆料涂覆在由pn结的p型吸收层(例如,包含碲化镉)所限定的表面上,并固化导电糊以形成 在由pn结的p型吸收层限定的表面上的导电涂层。 导电浆料可以包括导电材料,溶剂系统和粘合剂,使得在固化过程中,来自导电浆料的酸反应以使碲表面富集,同时铜沉积到富Te表面上。 然后酸在固化过程中基本消耗。

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