公开(公告)号：US12132129B2

公开(公告)日：2024-10-29

申请号：US17759840

申请日：2021-02-15

Applicant: Alliance for Sustainable Energy, LLC

Inventor： Christopher Paul Muzzillo ,  Matthew Owen Reese

IPC: H01L31/0463 ,  G03F7/004 ,  H01L31/18

CPC classification number: H01L31/0463 ,  G03F7/0043 ,  H01L31/1828 ,  H01L31/1884

Abstract: Disclosed herein are methods for using cracked film lithography (CFL) for patterning transparent conductive metal grids. CFL can be vacuum- and Ag-free, and it forms more durable grids than nanowire approaches.

公开(公告)号：US12002895B2

公开(公告)日：2024-06-04

申请号：US16926581

申请日：2020-07-10

Applicant: FLISOM AG

Inventor： Louis Schar ,  Thomas Netter

IPC: H01L31/0465 ,  B32B37/26 ,  B32B38/00 ,  H01L31/02 ,  H01L31/042 ,  H01L31/048 ,  H01L31/054 ,  H01L31/18

CPC classification number: H01L31/0465 ,  B32B37/26 ,  H01L31/0201 ,  H01L31/042 ,  H01L31/048 ,  H01L31/0543 ,  H01L31/186 ,  H01L31/1876 ,  H01L31/1896 ,  B32B2038/0072 ,  B32B2305/22 ,  B32B2457/12 ,  H01L31/1828 ,  Y02E10/52

Abstract: A photovoltaic apparatus is provided including a back sheet and a photovoltaic device disposed over the back sheet. The photovoltaic device includes an array of photovoltaic cells extending in a first direction; and a plurality of serial interconnects having a length that extends in a second direction, wherein each serial interconnect is disposed between and electrically connects consecutive photovoltaic cells of the array. The photovoltaic apparatus further includes a front sheet disposed over the photovoltaic device, the front sheet having a plurality of structures, wherein each structure has one or more edges aligned with one of the serial interconnects.

公开(公告)号：US11791427B2

公开(公告)日：2023-10-17

申请号：US17509710

申请日：2021-10-25

Applicant: First Solar, Inc.

Inventor： Sachit Grover ,  Stuart Irvine ,  Xiaoping Li ,  Roger Malik ,  Shahram Seyedmohammadi ,  Gang Xiong ,  Wei Zhang

IPC: H01L31/0296 ,  H01L31/18

CPC classification number: H01L31/02963 ,  H01L31/1828 ,  H01L31/1864

Abstract: Provided are structures and methods for doping polycrystalline thin film semiconductor materials in photovoltaic devices. Embodiments include methods for forming and treating a photovoltaic semiconductor absorber layer.

公开(公告)号：US20230317864A1

公开(公告)日：2023-10-05

申请号：US18206430

申请日：2023-06-06

Applicant: First Solar, Inc.

Inventor： Upali Jayamaha ,  Michael T. Steele ,  Syed Zafar

IPC: H01L31/0224 ,  H01L31/0749 ,  H01L31/18

CPC classification number: H01L31/022425 ,  H01L31/0749 ,  H01L31/1828 ,  Y02E10/50 ,  H01L31/1884

Abstract: A photovoltaic cell can include a nitrogen-containing metal layer in contact with a semiconductor layer.

公开(公告)号：US20230187572A1

公开(公告)日：2023-06-15

申请号：US18105512

申请日：2023-02-03

Applicant: First Solar, Inc.

Inventor： Nikhil Bhandari ,  Charles Wickersham

IPC: H01L31/18 ,  H01L31/0216 ,  H01L31/0224 ,  H01L31/0296 ,  H01L31/05

CPC classification number: H01L31/186 ,  H01L31/0296 ,  H01L31/0516 ,  H01L31/1828 ,  H01L31/02167 ,  H01L31/022466

Abstract: According to the embodiments provided herein, a method for scribing a layer stack of a photovoltaic device can include directing a laser scribing waveform to a film side of a layer stack. The laser scribing waveform can include pulse groupings that repeat at a group repetition period of greater than or equal to 1.5 µs. Each pulse of the pulse groupings can have a pulse width of less than or equal to 900 fs.

公开(公告)号：US10062800B2

公开(公告)日：2018-08-28

申请号：US13912782

申请日：2013-06-07

Applicant: First Solar, Inc.

Inventor： Holly Ann Blaydes ,  Kristian William Andreini ,  William Hullinger Huber ,  Eugene Thomas Hinners ,  Joseph John Shiang ,  Yong Liang ,  Jongwoo Choi ,  Adam Fraser Halverson

IPC: H01L31/0272 ,  H01L31/18 ,  H01L31/0224 ,  H01L31/0296 ,  H01L31/065 ,  H01L31/073

CPC classification number: H01L31/1828 ,  H01L31/022425 ,  H01L31/02966 ,  H01L31/065 ,  H01L31/073 ,  H01L31/1832 ,  Y02E10/543 ,  Y02P70/521

Abstract: A photovoltaic device is presented. The photovoltaic device includes a layer stack; and an absorber layer is disposed on the layer stack. The absorber layer includes selenium, and an atomic concentration of selenium varies non-linearly across a thickness of the absorber layer. A method of making a photovoltaic device is also presented.

公开(公告)号：US10007057B2

公开(公告)日：2018-06-26

申请号：US15347314

申请日：2016-11-09

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Russell A. Budd ,  Effendi Leobandung ,  Ning Li ,  Jean-Olivier Plouchart ,  Devendra K. Sadana

IPC: G02B6/12 ,  G02B6/122 ,  G02B6/42 ,  H01L31/0216 ,  H01L31/103 ,  H01L31/18 ,  G02B6/132

CPC classification number: G02B6/12004 ,  G02B6/12002 ,  G02B6/122 ,  G02B6/132 ,  G02B6/4201 ,  G02B6/428 ,  G02B2006/12121 ,  G02B2006/12123 ,  G02B2006/12176 ,  H01L31/02161 ,  H01L31/1035 ,  H01L31/1828 ,  H01L31/184

Abstract: An optoelectronic device includes an integrated circuit including electronic devices formed on a front side of a semiconductor substrate. A barrier layer is formed on a back side of the semiconductor substrate. A photonics layer is formed on the barrier layer. The photonics layer includes a core for transmission of light and a cladding layer encapsulating the core and including a different index of refraction than the core. The core is configured to couple light generated from a component of the optoelectronic device.

公开(公告)号：US09972739B2

公开(公告)日：2018-05-15

申请号：US14825581

申请日：2015-08-13

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Ki Yon Park ,  Hwa Mok Kim ,  Young Hwan Son ,  Daewoong Suh

IPC: H01L21/00 ,  H01L31/18 ,  H01L31/108 ,  H01L31/0224 ,  H01L31/0352 ,  H01L31/0392

CPC classification number: H01L31/1828 ,  H01L31/022483 ,  H01L31/03529 ,  H01L31/0392 ,  H01L31/108 ,  H01L31/1832 ,  Y02E10/50 ,  Y02E10/52

Abstract: A method of forming a light detection device includes forming a non-porous layer on a substrate, forming a light absorption layer on the non-porous layer, the light absorption layer including pores formed in a surface thereof, forming a Schottky layer on the surface of the light absorption layer and in the pores thereof, and forming a first electrode layer on the Schottky layer.

公开(公告)号：US09952337B2

公开(公告)日：2018-04-24

申请号：US14474214

申请日：2014-09-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seung-hyup Lee ,  Sun-il Kim ,  Young Kim ,  Chang-jung Kim

IPC: G01T1/24 ,  H01L31/032 ,  H01L27/146 ,  H01L31/08 ,  G01N23/04 ,  G01T1/202 ,  H01L31/0272 ,  H01L31/028 ,  H01L31/0296 ,  H01L31/0304 ,  H01L31/0336 ,  H01L31/18 ,  H01L31/20 ,  H01L31/0384

CPC classification number: G01T1/24 ,  G01N23/04 ,  G01T1/2023 ,  H01L27/14676 ,  H01L27/14683 ,  H01L31/0272 ,  H01L31/028 ,  H01L31/0296 ,  H01L31/02966 ,  H01L31/0304 ,  H01L31/032 ,  H01L31/0324 ,  H01L31/0336 ,  H01L31/03845 ,  H01L31/085 ,  H01L31/18 ,  H01L31/1828 ,  H01L31/1832 ,  H01L31/202

Abstract: A radiation detector may include: a first photoconductor layer including a plurality of photosensitive particles; and/or a second photoconductor layer on the first photoconductor layer, and including a plurality of crystals obtained by crystal-growing photosensitive material. At least some of the plurality of photosensitive particles of the first photoconductor layer may fill gaps between the plurality of crystals of the second photoconductor layer. A method of manufacturing a radiation detector may include: forming a first photoconductor layer by applying paste, including solvent mixed with a plurality of photosensitive particles, to a first substrate; forming a second photoconductor layer by crystal-growing photosensitive material on a second substrate; pressing the crystal-grown second photoconductor layer on the first photoconductor layer that is applied to the first substrate; and/or removing the solvent in the first photoconductor layer via a drying process.

公开(公告)号：US09915567B2

公开(公告)日：2018-03-13

申请号：US15194753

申请日：2016-06-28

Applicant: Excelitas Technologies Singapore Pte Ltd.

Inventor： Piotr Kropelnicki ,  Radu M. Marinescu ,  Grigore D. Huminic ,  Hermann Karagoezoglu ,  Kai Liang Chuan

IPC: G01J5/20 ,  G01J5/12 ,  G01J5/06 ,  H01L31/09 ,  H01L35/32 ,  H01L35/34 ,  H01L31/18

CPC classification number: G01J5/12 ,  G01J5/024 ,  G01J5/061 ,  G01J2005/065 ,  H01L31/09 ,  H01L31/1804 ,  H01L31/1828 ,  H01L31/1856 ,  H01L35/32 ,  H01L35/34

Abstract: An unreleased thermopile IR sensor and method of fabrication is provided which includes a new thermally isolating material and an ultra-thin material based sensor which, in combination, provide excellent sensitivity without requiring a released membrane structure. The sensor is fabricated using a wafer transfer technique in which a substrate assembly comprising the substrate and new thermally isolating material is bonded to a carrier substrate assembly comprising a carrier substrate and the ultra-thin material, followed by removal of the carrier substrate. As such, temperature restrictions of the various materials are overcome.