公开(公告)号：US09054241B2

公开(公告)日：2015-06-09

申请号：US14015041

申请日：2013-08-30

Applicant: First Solar, Inc.

Inventor： Bastiaan Arie Korevaar ,  Juan Carlos Rojo ,  Roman Shuba

IPC: H01L31/102 ,  H01L31/0224 ,  H01L31/073 ,  H01L31/0296 ,  H01L33/00

CPC classification number: H01L31/022441 ,  H01L31/022425 ,  H01L31/0296 ,  H01L31/073 ,  H01L33/0083 ,  Y02E10/543

Abstract: A method for forming a back contact for a photovoltaic cell that includes at least one semiconductor layer is provided. The method includes applying a continuous film of a chemically active material on a surface of the semiconductor layer and activating the chemically active material such that the activated material etches the surface of the semiconductor layer. The method further includes removing the continuous film of the activated material from the photovoltaic cell and depositing a metal contact layer on the etched surface of the semiconductor layer.

Abstract translation: 提供一种用于形成包括至少一个半导体层的光伏电池的背接触的方法。 该方法包括在半导体层的表面上施加化学活性材料的连续膜并激活化学活性材料，使得活化的材料蚀刻半导体层的表面。 该方法还包括从光伏电池移除活化材料的连续膜并在半导体层的蚀刻表面上沉积金属接触层。