SEMICONDUCTOR MATERIAL SURFACE TREATMENT WITH LASER
    3.
    发明申请
    SEMICONDUCTOR MATERIAL SURFACE TREATMENT WITH LASER 审中-公开
    半导体材料表面处理激光

    公开(公告)号:US20140216542A1

    公开(公告)日:2014-08-07

    申请号:US14174691

    申请日:2014-02-06

    Abstract: A photovoltaic device and its method of manufacture are disclosed. The device is formed by forming a window layer over a substrate, forming an absorber layer over the window layer, and annealing the absorber layer using a laser beam to remove contaminants from the surface of the absorber layer and/or to reduce the thickness of the absorber layer.

    Abstract translation: 公开了一种光电器件及其制造方法。 该器件通过在衬底上形成窗口层,在窗口层上形成吸收层而形成,并且使用激光束对吸收层进行退火以从吸收层的表面去除污染物和/或减小吸收层的厚度 吸收层。

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