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公开(公告)号：US08198690B2
公开(公告)日：2012-06-12
申请号：US12853814
申请日：2010-08-10
IPC分类号： H01L29/84
CPC分类号： B81C1/00182 , B81B2201/0271 , H01L41/0933 , Y10S977/732
摘要： Micro-electromechanical system (MEMS) devices and methods of manufacture thereof are disclosed. In one embodiment, a MEMS device includes a first semiconductive material and at least one trench disposed in the first semiconductive material, the at least one trench having a sidewall. An insulating material layer is disposed over an upper portion of the sidewall of the at least one trench in the first semiconductive material and over a portion of a top surface of the first semiconductive material proximate the sidewall. A second semiconductive material or a conductive material is disposed within the at least one trench and at least over the insulating material layer disposed over the portion of the top surface of the first semiconductive material proximate the sidewall.
摘要翻译： 公开了微机电系统（MEMS）装置及其制造方法。 在一个实施例中，MEMS器件包括第一半导体材料和设置在第一半导体材料中的至少一个沟槽，所述至少一个沟槽具有侧壁。 绝缘材料层设置在第一半导体材料中的至少一个沟槽的侧壁的上部上方，以及靠近侧壁的第一半导体材料的顶表面的一部分之上。 第二半导体材料或导电材料设置在至少一个沟槽内，并且至少在绝缘材料层的上方设置在靠近侧壁的第一半导体材料的顶表面的部分之上。
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公开(公告)号：US20100301434A1
公开(公告)日：2010-12-02
申请号：US12853814
申请日：2010-08-10
CPC分类号： B81C1/00182 , B81B2201/0271 , H01L41/0933 , Y10S977/732
摘要： Micro-electromechanical system (MEMS) devices and methods of manufacture thereof are disclosed. In one embodiment, a MEMS device includes a first semiconductive material and at least one trench disposed in the first semiconductive material, the at least one trench having a sidewall. An insulating material layer is disposed over an upper portion of the sidewall of the at least one trench in the first semiconductive material and over a portion of a top surface of the first semiconductive material proximate the sidewall. A second semiconductive material or a conductive material is disposed within the at least one trench and at least over the insulating material layer disposed over the portion of the top surface of the first semiconductive material proximate the sidewall.
摘要翻译： 公开了微机电系统（MEMS）装置及其制造方法。 在一个实施例中，MEMS器件包括第一半导体材料和设置在第一半导体材料中的至少一个沟槽，所述至少一个沟槽具有侧壁。 绝缘材料层设置在第一半导体材料中的至少一个沟槽的侧壁的上部上方，以及靠近侧壁的第一半导体材料的顶表面的一部分之上。 第二半导体材料或导电材料设置在至少一个沟槽内，并且至少在绝缘材料层的上方设置在靠近侧壁的第一半导体材料的顶表面的部分之上。
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公开(公告)号：US09266719B2
公开(公告)日：2016-02-23
申请号：US13406069
申请日：2012-02-27
CPC分类号： B81C1/00182 , B81B2201/0271 , H01L41/0933 , Y10S977/732
摘要： Micro-electromechanical system (MEMS) devices and methods of manufacture thereof are disclosed. In one embodiment, a MEMS device includes a first semiconductive material and at least one trench disposed in the first semiconductive material, the at least one trench having a sidewall. An insulating material layer is disposed over an upper portion of the sidewall of the at least one trench in the first semiconductive material and over a portion of a top surface of the first semiconductive material proximate the sidewall. A second semiconductive material or a conductive material is disposed within the at least one trench and at least over the insulating material layer disposed over the portion of the top surface of the first semiconductive material proximate the sidewall.
摘要翻译： 公开了微机电系统（MEMS）装置及其制造方法。 在一个实施例中，MEMS器件包括第一半导体材料和设置在第一半导体材料中的至少一个沟槽，所述至少一个沟槽具有侧壁。 绝缘材料层设置在第一半导体材料中的至少一个沟槽的侧壁的上部上方，以及靠近侧壁的第一半导体材料的顶表面的一部分之上。 第二半导体材料或导电材料设置在至少一个沟槽内，并且至少在绝缘材料层的上方设置在靠近侧壁的第一半导体材料的顶表面的部分之上。
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公开(公告)号：US07851875B2
公开(公告)日：2010-12-14
申请号：US12013174
申请日：2008-01-11
IPC分类号： H01L29/84
CPC分类号： B81C1/00182 , B81B2201/0271 , H01L41/0933 , Y10S977/732
摘要： Micro-electromechanical system (MEMS) devices and methods of manufacture thereof are disclosed. In one embodiment, a MEMS device includes a first semiconductive material and at least one trench disposed in the first semiconductive material, the at least one trench having a sidewall. An insulating material layer is disposed over an upper portion of the sidewall of the at least one trench in the first semiconductive material and over a portion of a top surface of the first semiconductive material proximate the sidewall. A second semiconductive material or a conductive material is disposed within the at least one trench and at least over the insulating material layer disposed over the portion of the top surface of the first semiconductive material proximate the sidewall.
摘要翻译： 公开了微机电系统（MEMS）装置及其制造方法。 在一个实施例中，MEMS器件包括第一半导体材料和设置在第一半导体材料中的至少一个沟槽，所述至少一个沟槽具有侧壁。 绝缘材料层设置在第一半导体材料中的至少一个沟槽的侧壁的上部上方，以及靠近侧壁的第一半导体材料的顶表面的一部分之上。 第二半导体材料或导电材料设置在至少一个沟槽内，并且至少在绝缘材料层的上方设置在靠近侧壁的第一半导体材料的顶表面的部分之上。
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公开(公告)号：US20120164774A1
公开(公告)日：2012-06-28
申请号：US13406069
申请日：2012-02-27
IPC分类号： H01L21/02
CPC分类号： B81C1/00182 , B81B2201/0271 , H01L41/0933 , Y10S977/732
摘要： Micro-electromechanical system (MEMS) devices and methods of manufacture thereof are disclosed. In one embodiment, a MEMS device includes a first semiconductive material and at least one trench disposed in the first semiconductive material, the at least one trench having a sidewall. An insulating material layer is disposed over an upper portion of the sidewall of the at least one trench in the first semiconductive material and over a portion of a top surface of the first semiconductive material proximate the sidewall. A second semiconductive material or a conductive material is disposed within the at least one trench and at least over the insulating material layer disposed over the portion of the top surface of the first semiconductive material proximate the sidewall.
摘要翻译： 公开了微机电系统（MEMS）装置及其制造方法。 在一个实施例中，MEMS器件包括第一半导体材料和设置在第一半导体材料中的至少一个沟槽，所述至少一个沟槽具有侧壁。 绝缘材料层设置在第一半导体材料中的至少一个沟槽的侧壁的上部上方，以及靠近侧壁的第一半导体材料的顶表面的一部分之上。 第二半导体材料或导电材料设置在至少一个沟槽内，并且至少在绝缘材料层的上方设置在靠近侧壁的第一半导体材料的顶表面的部分之上。
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公开(公告)号：US20090179286A1
公开(公告)日：2009-07-16
申请号：US12013174
申请日：2008-01-11
CPC分类号： B81C1/00182 , B81B2201/0271 , H01L41/0933 , Y10S977/732
摘要： Micro-electromechanical system (MEMS) devices and methods of manufacture thereof are disclosed. In one embodiment, a MEMS device includes a first semiconductive material and at least one trench disposed in the first semiconductive material, the at least one trench having a sidewall. An insulating material layer is disposed over an upper portion of the sidewall of the at least one trench in the first semiconductive material and over a portion of a top surface of the first semiconductive material proximate the sidewall. A second semiconductive material or a conductive material is disposed within the at least one trench and at least over the insulating material layer disposed over the portion of the top surface of the first semiconductive material proximate the sidewall.
摘要翻译： 公开了微机电系统（MEMS）装置及其制造方法。 在一个实施例中，MEMS器件包括第一半导体材料和设置在第一半导体材料中的至少一个沟槽，所述至少一个沟槽具有侧壁。 绝缘材料层设置在第一半导体材料中的至少一个沟槽的侧壁的上部上方，以及靠近侧壁的第一半导体材料的顶表面的一部分之上。 第二半导体材料或导电材料设置在至少一个沟槽内，并且至少在绝缘材料层的上方设置在靠近侧壁的第一半导体材料的顶表面的部分之上。
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公开(公告)号：US08049490B2
公开(公告)日：2011-11-01
申请号：US12193780
申请日：2008-08-19
IPC分类号： G01R33/09
CPC分类号： G01R33/09 , H03H9/2457 , H03H2009/02496
摘要： Embodiments of the invention are related to MEMS devices and methods. In one embodiment, a MEMS device includes a resonator element comprising a magnetic portion having a fixed magnetization, and at least one sensor element comprising a magnetoresistive portion, wherein a magnetization and a resistivity of the magnetoresistive portion vary according to a proximity of the magnetic portion.
摘要翻译： 本发明的实施例涉及MEMS器件和方法。 在一个实施例中，MEMS器件包括谐振器元件，其包括具有固定磁化强度的磁性部分和至少一个包括磁阻部分的传感器元件，其中磁阻部分的磁化强度和电阻率根据磁性部分的接近度而变化 。
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公开(公告)号：US07612627B2
公开(公告)日：2009-11-03
申请号：US11863534
申请日：2007-09-28
申请人： Florian Schön , Wolfgang Raberg , Bernhard Winkler
发明人： Florian Schön , Wolfgang Raberg , Bernhard Winkler
IPC分类号： H04L27/20
CPC分类号： H03C3/42 , H03J2200/19
摘要： A modulator includes a micro-electromechanical resonator device configured to receive an input signal and generate two output signals in response thereto, wherein the two signals having a predetermined phase relationship therebetween. The modulator further includes a switching system configured to selectively pass one of the two signals to an output of the modulator in an alternating fashion in response to phase modulation data.
摘要翻译： 调制器包括被配置为接收输入信号并响应于此产生两个输出信号的微机电谐振器装置，其中两个信号之间具有预定的相位关系。 该调制器还包括一个交换系统，配置成响应于相位调制数据以交替的方式选择性地将两个信号之一传送到调制器的输出端。
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公开(公告)号：US20090261416A1
公开(公告)日：2009-10-22
申请号：US12105989
申请日：2008-04-18
申请人： Wolfgang Raberg , Bernhard Winkler
发明人： Wolfgang Raberg , Bernhard Winkler
CPC分类号： B81C1/00246 , B81C2203/0728
摘要： An integrated circuit includes a silicon-on-insulator (SOI) substrate including a buried oxide layer positioned between a top-side silicon layer and a bottom-side silicon layer. A micro-electromechanical system (MEMS) device is integrated into the top-side silicon layer. A semiconductor layer is formed over the bottom-side silicon layer. A control circuit is integrated into the semiconductor layer and is configured to control the MEMS device.
摘要翻译： 集成电路包括绝缘体上硅（SOI）衬底，其包括位于顶侧硅层和底侧硅层之间的掩埋氧化物层。 微机电系统（MEMS）器件集成到顶侧硅层中。 半导体层形成在底侧硅层的上方。 控制电路被集成到半导体层中并且被配置为控制MEMS器件。
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10.发明授权Magnetic field sensor having XMR elements in a full bridge circuit having diagonal elements sharing a same shape anisotropy 有权磁场传感器在全桥电路中具有XMR元件，其具有共享相同形状各向异性的对角线元件公开(公告)号：US09411024B2
公开(公告)日：2016-08-09
申请号：US13451737
申请日：2012-04-20
申请人： Wolfgang Raberg
发明人： Wolfgang Raberg
IPC分类号： G01R33/09
CPC分类号： G01R33/093 , G01R33/09 , G01R33/098
摘要： Embodiments of the present invention provide a magnetic field sensor. The magnetic field sensor includes at least four XMR elements connected in a full bridge circuit including parallel branches. The at least four XMR elements are GMR or TMR elements (GMR=giant magnetoresistance; TMR=tunnel magnetoresistance). Two diagonal XMR elements of the full bridge circuit include the same shape anisotropy, wherein XMR elements in the same branch of the full bridge circuit include different shape anisotropies.
摘要翻译： 本发明的实施例提供一种磁场传感器。 磁场传感器包括连接在包括平行分支的全桥电路中的至少四个XMR元件。 至少四个XMR元件是GMR或TMR元件（GMR =巨磁电阻; TMR =隧道磁阻）。 全桥电路的两个对角XMR元件包括相同的形状各向异性，其中全桥电路的同一分支中的XMR元件包括不同的形状各向异性。
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